BDB02C equivalent
Abstract: bdb02c
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors BDB02C PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –80 Vdc Collector – Base Voltage VCES –80 Vdc Emitter – Base Voltage
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BDB02C
226AE)
BDB02C equivalent
bdb02c
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor BDB01C NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 1 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage
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BDB01C
226AE)
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FTN256
Abstract: schematic diagram usb flash sandisk sandisk micro sd card pin configuration sandisk micro sd card circuit diagram 10K,DNI verilog code for delta sigma adc 8 bit dip switch FT232R USB UART SMD Transistor g16 CB20
Text: MachXO Control Development Kit User’s Guide June 2010 Revision: EB46_01.4 Lattice Semiconductor MachXO Control Development Kit User’s Guide Introduction Thank you for choosing the Lattice Semiconductor MachXO Control Development Kit! This guide describes how to start using the MachXO Control Development Kit, an easy-to-use platform for rapidly
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POWER1014A
Abstract: sandisk micro sd card pin configuration RD1063 DIC20 AVX-31-5620-050-116-871 transistor SMD f12 0603 smt resistor POWR1014A SMD Transistor g16 DS3904U-020 T
Text: MachXO Control Development Kit User’s Guide October 2009 Revision: EB46_01.2 Lattice Semiconductor MachXO Control Development Kit User’s Guide Introduction Thank you for choosing the Lattice Semiconductor MachXO Control Development Kit! This guide describes how to start using the MachXO Control Development Kit, an easy-to-use platform for rapidly
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DELTA fan bfb
Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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MPSH81
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
DELTA fan bfb
BC237
TRANSISTOR REPLACEMENT FOR 2N3053
BC547 REPLACE
t1 bc140
BC108 motorola
2n2222 sot323
MOTOROLA LOT MARKINGS
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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MPS5771
Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage
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MPS3640
226AA)
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPS5771
MPS8093
bf391
2n3819 replacement
MPS3640 equivalent
MPF3821
MPS6595
MAD130P
BC108 characteristic
2n3819 equivalent ic
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BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
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MPS6520 equivalent
Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage
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MPSW01
MPSW01A*
MPSW01A
226AE)
Junc218A
MSC1621T1
MSC2404
MPS6520 equivalent
BC237
transistor Vbe 2n2222
Characteristic curve BC107
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15
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MPSH17
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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MPS2369 equivalent
Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage
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MPS2369
MPS2369A*
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPS2369 equivalent
BC237
2N5551 circuit
2N2369A MOTOROLA
t1 bc140
BS107 "direct replacement"
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motorola p1f
Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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OT-223
PZT2907AT1
PZT2222AT1
inch/1000
PZT2222AT3
inch/4000
unit218A
MSC1621T1
motorola p1f
hie for bc547b
BC237
transistor motorola 2n3053
Marking P1F
619 sc-59
P1F marking
MARKING CODE Zi sot363
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2N5640 equivalent
Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C
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2N5640
226AA)
Gate218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
2N5640 equivalent
BC547 collector characteristic curve
BF245 application note
motorola JFET 2N3819
BC237
2N2904
2N6431
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MV104 "direct replacement"
Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.
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MV104)
MV104
226AA)
Curren218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV104 "direct replacement"
2N3819 Application Note
BF245 application note
K 2056 transistor
MV104 equivalent
BC237
BSS89 APPLICATION
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2N3819
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for
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OT-416/SC
7-inch/3000
2SC4617
SURFAC218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N3819
BC237
BCY72
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code marking 6z sot-23
Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous
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MMBF170LT1
236AB)
C218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
code marking 6z sot-23
BC237
H2A transistor
BF245
6z sot223 marking
MMBV2104
j112 fet
BCY72
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2608 surface mount transistor
Abstract: BC237 high hfe darlington transistor sc70
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPS6724 MPS6725 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPS6724 MPS6725 Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage VCBO 50
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MPS6724
MPS6725
MPS6725
226AE)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2608 surface mount transistor
BC237
high hfe darlington transistor sc70
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hie for bc547b
Abstract: bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage
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MPS6428
226AA)
Unit218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
hie for bc547b
bc109
2n2222a SOT223
BC237
MPS3563
2N2904
BF256
BSS89 APPLICATION
BCY72
mps5771
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mps2907 replacement
Abstract: BC237 motorola 2n4033 Transistor 2N3019
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 MPS2907A* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol MPS2907 MPS2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc
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MPS2907
MPS2907A*
MPS2907
MPS2907A
226AA)
Therma218A
MSC1621T1
MSC2404
MSD1819A
MV1620
mps2907 replacement
BC237
motorola 2n4033
Transistor 2N3019
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j305 replacement
Abstract: BC237 mps2907 replacement BC109C replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV3102LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
j305 replacement
BC237
mps2907 replacement
BC109C replacement
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MPSW06 equivalent
Abstract: BC237 Motorola MPSA42
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage VCEO 60 80 Vdc Collector – Base Voltage
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MPSW05
MPSW06*
MPSW06
226AE)
Thermal218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MPSW06 equivalent
BC237
Motorola MPSA42
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diode l 0607
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
70/SOT
M1MA142KT1
MSC1621T1
diode l 0607
BC237
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BC237
Abstract: BC238B MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value
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PZTA42T1
318E-04,
O-261AA
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
BC238B MOTOROLA
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