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    IXYS Corporation DEIC421

    IC GATE DRVR LOW-SIDE DE275
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    DEIC421 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DEIC421 IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), RF MOSFET DRIVER 20 AMP Original PDF

    DEIC421 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DEIC421

    Abstract: 13.56Mhz class e power amplifier mosfet driver 5v to 30v RF MOSFET Driver RF MOSFETs power amplifier mosfet up to 50mhz SMPS CIRCUIT DIAGRAM 5V 20A "RF MOSFETs" Class E power amplifier, 13.56MHz DEIC420 RF MOSFET Gate Driver IC
    Text: DEIC421 RF MOSFET DRIVER 20 Ampere Ultrafast RF MOSFET Driver With Kelvin Connection Features • Built using the advantages and compatibility of CMOS and IXYS HDMOS processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V


    Original
    DEIC421 DEIC421 13.56Mhz class e power amplifier mosfet driver 5v to 30v RF MOSFET Driver RF MOSFETs power amplifier mosfet up to 50mhz SMPS CIRCUIT DIAGRAM 5V 20A "RF MOSFETs" Class E power amplifier, 13.56MHz DEIC420 RF MOSFET Gate Driver IC PDF

    500w mosfet power amplifier circuit diagram

    Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
    Text: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original
    IXZ421DF18N50 DEIC421 IXZ318N50 IXZ421DF18N50 500w mosfet power amplifier circuit diagram RF POWER MOSFET 500w hf power amplifier circuit diagram power mosfet triggering circuit mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier PDF

    IXZ421DF12N100

    Abstract: No abstract text available
    Text: designfeature Siddarth Sundaresan, Director-Device Design & Fabrication, Michael Digangi, Chief Business Development Officer, and Ranbir Singh, President, GeneSiC Semiconductor, Inc. SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance


    Original
    kV-10 -500V -1000V IXZ421DF12N100 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF