schematics for a PA amplifier
Abstract: MAX2242 APP3249 DECT schematic AN3249
Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DECT, Power Amplifier, PA, 1.9GHz, 1905MHz, 1905 MHz, DECT PA, DECT power amplifier May 27, 2004 APPLICATION NOTE 3249 1.9GHz DECT Power Amplifier Delivers +27dBm from 3.6V at 41% PAE The MAX2242 is an ultra-low cost silicon bipolar power amplifier PA with integrated bias-circuitry, logic-level
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1905MHz,
27dBm
MAX2242
29dBm
schematics for a PA amplifier
APP3249
DECT schematic
AN3249
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draw pin configuration of ic 7400
Abstract: AN96084 BC807 BC858 CGY2030M DTC114YE DECT power philips dect 7.1 power amplifier circuit diagram 4.1 amplifier circuit diagram
Text: APPLICATION NOTE Application of the CGY2030M power amplifier AN96084 Philips Semiconductors Philips Semiconductors CGY2030M DECT power amplifier Application Note Abstract The CGY2030M is a monolithic GaAs power amplifier for transmission DECT applications.
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CGY2030M
AN96084
CGY2030M
draw pin configuration of ic 7400
AN96084
BC807
BC858
DTC114YE
DECT power
philips dect
7.1 power amplifier circuit diagram
4.1 amplifier circuit diagram
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grm36x7r102k50
Abstract: GRM155F51C104ZA01B GRM155R71C223KA01B M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 grm36y5v GRM1555C1H1R5CZ01D
Text: MAAPSS0076 DECT Power Amplifier 1880 - 1930 MHz Rev. V3 Functional Schematic Features • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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MAAPSS0076
12-Lead
MAAPSS0076
grm36x7r102k50
GRM155F51C104ZA01B
GRM155R71C223KA01B
M513
MAAPSS0076SMB
MAAPSS0076TR-3000
grm36y5v
GRM1555C1H1R5CZ01D
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CGY2032TS
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Objective specification Supersedes data of 1997 Sep 04 File under Integrated Circuits, IC17 1998 Jun 10 Philips Semiconductors Objective specification DECT 500 mW power amplifier CGY2032TS
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CGY2032TS
SSOP16
SCA60
435102/1200/02/pp12
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philips dect
Abstract: CGY2032TS
Text: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Preliminary specification Supersedes data of 1998 Jun 10 File under Integrated Circuits, IC17 1998 Nov 23 Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2032TS
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CGY2032TS
SSOP16
SCA60
435102/750/03/pp12
philips dect
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TQFP 44 PACKAGE footprint
Abstract: BC807 BC849C CGY2032BTS SSOP16
Text: INTEGRATED CIRCUITS DATA SHEET CGY2032BTS DECT 500 mW power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Mar 14 Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2032BTS FEATURES APPLICATIONS • Power Amplifier PA overall efficiency 55%
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CGY2032BTS
CGY2032BTS
403506/01/pp12
TQFP 44 PACKAGE footprint
BC807
BC849C
SSOP16
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BC807
Abstract: BC849C CGY2032BTS SSOP16 CGY2032B-CO CGY2032BTS/C1
Text: INTEGRATED CIRCUITS DATA SHEET CGY2032BTS DECT 500 mW power amplifier Product specification Supersedes data of 2000 Mar 14 File under Integrated Circuits, IC17 2000 Aug 22 Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2032BTS
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CGY2032BTS
403506/02/pp12
BC807
BC849C
CGY2032BTS
SSOP16
CGY2032B-CO
CGY2032BTS/C1
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M513
Abstract: MAAPSS0113 MAAPSS0113SMB MAAPSS0113TR-3000 Dropping Diode
Text: MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 Features • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25 dBm Low Power Mode: 15 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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MAAPSS0113
12-Lead
MAAPSS0113
12-learget
M513
MAAPSS0113SMB
MAAPSS0113TR-3000
Dropping Diode
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GRM155F51C104ZA01B
Abstract: GRM155R71C223KA01B GRM36X7R102K50 M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 GRM36cog DECT telephone schematic
Text: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0076 V3 Features Functional Schematic • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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MAAPSS0076
12-Lead
MAAPSS0076
GRM155F51C104ZA01B
GRM155R71C223KA01B
GRM36X7R102K50
M513
MAAPSS0076SMB
MAAPSS0076TR-3000
GRM36cog
DECT telephone schematic
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GRM155F51C104ZA01B
Abstract: GRM155R71C223KA01B GRM36X7R102K50 M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000
Text: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0076 V1 Features Functional Schematic • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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MAAPSS0076
12-Lead
MAAPSS0076
GRM155F51C104ZA01B
GRM155R71C223KA01B
GRM36X7R102K50
M513
MAAPSS0076SMB
MAAPSS0076TR-3000
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schematics for a PA amplifier
Abstract: BC807 BC858 CGY2030M SSOP16 CGY20
Text: INTEGRATED CIRCUITS DATA SHEET CGY2030M DECT 500 mW power amplifier Product specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1997 Jan 17 Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES
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CGY2030M
CGY2030M
SSOP16
packag31
SCA53
437027/1200/03/pp12
schematics for a PA amplifier
BC807
BC858
CGY20
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CGY2032TS
Abstract: philips rf manual TQFP 44 PACKAGE footprint BC807 BC849C SSOP16
Text: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Product specification Supersedes data of 1998 Nov 23 File under Integrated Circuits, IC17 1999 Jul 21 Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2032TS FEATURES
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CGY2032TS
465008/04/pp12
CGY2032TS
philips rf manual
TQFP 44 PACKAGE footprint
BC807
BC849C
SSOP16
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grm36x7r102k50
Abstract: GRM1555C1H1R5CZ01D grm36y5v GRM155F51C104ZA01B GRM155R71C223KA01B M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 ERJ-2RKF4020X
Text: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0076 V2 Features Functional Schematic • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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MAAPSS0076
12-Lead
MAAPSS0076
grm36x7r102k50
GRM1555C1H1R5CZ01D
grm36y5v
GRM155F51C104ZA01B
GRM155R71C223KA01B
M513
MAAPSS0076SMB
MAAPSS0076TR-3000
ERJ-2RKF4020X
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DECT telephone schematic
Abstract: No abstract text available
Text: DECT Power Amplifier 1880 - 1930 MHz Preliminary V2P MAAPSS0071 Lead Free Features • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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MAAPSS0071
MAAPSS0071
S2083
DECT telephone schematic
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RK73B1ET470J
Abstract: ntp 3000 RK73B1ET101J GRM1555C1H1R0CZ01B GRM1555C1H3R0CZ01B GRM155R71C223KA01B M513 MAAPSS0071 MAAPSS0071SMB MAAPSS0071TR-3000
Text: MAAPSS0071 DECT Power Amplifier 1880 - 1930 MHz Rev. V3 Features • • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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MAAPSS0071
12-Lead
MAAPSS0071
RK73B1ET470J
ntp 3000
RK73B1ET101J
GRM1555C1H1R0CZ01B
GRM1555C1H3R0CZ01B
GRM155R71C223KA01B
M513
MAAPSS0071SMB
MAAPSS0071TR-3000
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LMX4168
Abstract: SC144XX DECT Transceiver AN-1187 LMX4168FLQ LQA044AF 864kHz
Text: March 2004 LMX4168 Radio Transceiver for DECT 1.0 General description 2.0 Features The LMX4168 is a radio transceiver integrated circuit optimized for the Digital Enhanced Cordless Telecommunications DECT system. The transceiver, when combined with a power amplifier and a Tx/Rx switch, implements a complete DECT radio transceiver compliant with the ETSI
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LMX4168
LMX4168
SC144XX
DECT Transceiver
AN-1187
LMX4168FLQ
LQA044AF
864kHz
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DECT telephone schematic
Abstract: No abstract text available
Text: LEAD FREE DECT Power Amplifier 1880 - 1930 MHz MAAPSS0071 V1 Features • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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12-Lead
MAAPSS0071
pow20
DECT telephone schematic
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Untitled
Abstract: No abstract text available
Text: MAAPSS0071 DECT Power Amplifier 1880 - 1930 MHz Rev. V3 Features • • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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MAAPSS0071
12-Lead
MAAPSS0071
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ITT2205AF
Abstract: 1008CS j438
Text: 3.6V 0.5W RF Power Amplifier IC for DECT ITT2205AF Applications Features • • • • • • • DECT PCS Personal Wireless Telephony PWT Cordless PBX Radio/Wireless Local Loop (RLL/WLL) Single Positive Supply 54% Power Added Efficiency 100% Duty Cycle
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ITT2205AF
ITT2205AF
1008CS
j438
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Untitled
Abstract: No abstract text available
Text: U2761B DECT RF / IF IC Description The U2761B is an integrated circuit manufactured in TEMIC Semiconductors’ UHF5S technology, designed for DECT application. It contains rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier and power-ramping generator for power
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U2761B
U2761B
D-74025
21-Dec-99
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power amplifier block diagram
Abstract: balun diode mixer U2761B ic MA 2831
Text: U2761B DECT RF / IF IC Description The U2761B is an integrated circuit manufactured in TEMIC’s UHF5S technology, designed for DECT application. It contains rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier and power-ramping generator for power amplifier.
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U2761B
U2761B
D-74025
10-Mar-98
power amplifier block diagram
balun diode mixer
ic MA 2831
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ntp 3000
Abstract: RK73B1ET470J GRM1555C1H1R0CZ01B GRM1555C1H3R0CZ01B GRM155R71C223KA01B M513 MAAPSS0071 MAAPSS0071SMB MAAPSS0071TR-3000 DECT power
Text: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0071 V3 Features • • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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MAAPSS0071
12-Lead
MAAPSS0071
ntp 3000
RK73B1ET470J
GRM1555C1H1R0CZ01B
GRM1555C1H3R0CZ01B
GRM155R71C223KA01B
M513
MAAPSS0071SMB
MAAPSS0071TR-3000
DECT power
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philips dect
Abstract: CGY2032TS
Text: Philips Semiconductors Objective specification DECT 500 mW power amplifier CGY2032TS FEATURES APPLICATIONS • Power Amplifier PA overall efficiency 50% • 1.88 to 1.9 GHz transceivers for DECT applications • 27 dBm saturated output power • 2 GHz transceivers (PHS, DCS and PCS).
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SSOP16
CGY2032TS
CGY2032TS
philips dect
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CGY2032TS
Abstract: SSOP16 SSOP20
Text: Philips Semiconductors Objective specification DECT 500 mW power amplifier CGY2032TS FEATURES APPLICATIONS • Power Amplifier PA overall efficiency 50% • 1.88 to 1.9 GHz transceivers for DECT applications • 27 dBm saturated output power • 2 GHz transceivers (PHS, DCS and PCS).
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OCR Scan
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SSOP16
CGY2032TS
CGY2032TS
SSOP20
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