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    DEC11 Search Results

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    DEC11 Price and Stock

    ROHM Semiconductor SCT4026DEC11

    750V, 26M, 3-PIN THD, TRENCH-STR
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    DigiKey SCT4026DEC11 Tube 4,927 1
    • 1 $23.17
    • 10 $23.17
    • 100 $14.75033
    • 1000 $23.17
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    Avnet Americas SCT4026DEC11 Tube 27 Weeks 450
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    • 1000 $12.92
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    Mouser Electronics SCT4026DEC11 673
    • 1 $19.16
    • 10 $18.17
    • 100 $18.17
    • 1000 $18.17
    • 10000 $18.17
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    Newark SCT4026DEC11 Bulk 440 1
    • 1 $22.11
    • 10 $19.65
    • 100 $18.9
    • 1000 $18.9
    • 10000 $18.9
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    TTI SCT4026DEC11 Tube 450 50
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    Avnet Asia SCT4026DEC11 32 Weeks 450
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    Chip1Stop SCT4026DEC11 Tube 854
    • 1 $19.5
    • 10 $15.2
    • 100 $12.3
    • 1000 $11.9
    • 10000 $11.9
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    CoreStaff Co Ltd SCT4026DEC11 450
    • 1 $13.37
    • 10 $8.143
    • 100 $7.659
    • 1000 $7.659
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    SCT4026DEC11 163
    • 1 $13.37
    • 10 $8.143
    • 100 $7.659
    • 1000 $7.659
    • 10000 $7.659
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    New Advantage Corporation SCT4026DEC11 450 1
    • 1 -
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    • 1000 $16.14
    • 10000 $16.14
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    ROHM Semiconductor SCT4045DEC11

    750V, 45M, 3-PIN THD, TRENCH-STR
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    DigiKey SCT4045DEC11 Tube 4,206 1
    • 1 $13.86
    • 10 $10.138
    • 100 $10.138
    • 1000 $13.86
    • 10000 $13.86
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    Avnet Americas SCT4045DEC11 Tube 900 27 Weeks 1
    • 1 -
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    • 100 -
    • 1000 $7.9
    • 10000 $7.9
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    Mouser Electronics SCT4045DEC11 749
    • 1 $15.08
    • 10 $11.22
    • 100 $11.22
    • 1000 $8.34
    • 10000 $8.34
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    Newark SCT4045DEC11 Bulk 415 1
    • 1 $14.71
    • 10 $12.96
    • 100 $11.97
    • 1000 $10.16
    • 10000 $10.16
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    TTI SCT4045DEC11 Tube 450 50
    • 1 -
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    • 100 $10.18
    • 1000 $8.34
    • 10000 $8.34
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    Chip1Stop SCT4045DEC11 Tube 797
    • 1 $13.3
    • 10 $10.7
    • 100 $8.91
    • 1000 $8.4
    • 10000 $8.4
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    New Advantage Corporation SCT4045DEC11 450 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.93
    • 10000 $10.93
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    ROHM Semiconductor SCT4013DEC11

    750V, 105A, 3-PIN THD, TRENCH-ST
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SCT4013DEC11 Tube 361 1
    • 1 $31.84
    • 10 $31.84
    • 100 $23.29367
    • 1000 $23.29367
    • 10000 $23.29367
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    Avnet Americas SCT4013DEC11 Tube 27 Weeks 450
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    Mouser Electronics SCT4013DEC11 385
    • 1 $35.69
    • 10 $34.92
    • 100 $23.3
    • 1000 $23.3
    • 10000 $23.3
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    Newark SCT4013DEC11 Bulk 445 1
    • 1 $37.77
    • 10 $35.44
    • 100 $29.36
    • 1000 $28.28
    • 10000 $28.28
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    TTI SCT4013DEC11 Tube 450
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    • 1000 $23.29
    • 10000 $23.29
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    Avnet Silica SCT4013DEC11 31 Weeks 450
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    Chip1Stop SCT4013DEC11 Tube 694
    • 1 $29.2
    • 10 $23.2
    • 100 $20.5
    • 1000 $19.3
    • 10000 $19.3
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    CoreStaff Co Ltd SCT4013DEC11 450
    • 1 $20.996
    • 10 $15.848
    • 100 $15.848
    • 1000 $15.848
    • 10000 $15.848
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    SCT4013DEC11 116
    • 1 $20.996
    • 10 $15.848
    • 100 $15.848
    • 1000 $15.848
    • 10000 $15.848
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    New Advantage Corporation SCT4013DEC11 450 1
    • 1 -
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    • 1000 $30.1
    • 10000 $30.1
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    Abracon Corporation AMPMDEC-11.2896T

    MEMS Crystal Oscillator 11.2896MHz ?50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMDEC-11.2896T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMDEC-11.2896T Reel 1,000
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    Mouser Electronics AMPMDEC-11.2896T
    • 1 -
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    • 1000 $1.11
    • 10000 $1.06
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    Avnet Abacus AMPMDEC-11.2896T 113 Weeks 1,000
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    Abracon Corporation AMPMDEC-11.0590T3

    MEMS Crystal Oscillator 11.059MHz ?50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMDEC-11.0590T3)
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    Avnet Americas AMPMDEC-11.0590T3 Reel 3,000
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    Mouser Electronics AMPMDEC-11.0590T3
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    • 10000 $1.04
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    Avnet Abacus AMPMDEC-11.0590T3 113 Weeks 3,000
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    Find more DEC11 price and stock on Findchips.com

    DEC11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier DFM Current 1.0 A Voltage 200 V to 1000 V FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated insertion • High forward surge current capability


    Original     		PDF HEDFM103G HEDFM107G 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11

    Transistor BFR 90

    Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
    Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-323 Q62702-F1510 Dec-11-1996 Transistor BFR 90 F1510 Q62702-F1510 Transistor BFR 900mhz 193W

    BFR106

    Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
    Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor

    80846

    Abstract: 022241 gummel
    Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143


    Original     		PDF OT-143 Q62702-F1611 900MHz Dec-11-1996 80846 022241 gummel

    Untitled

    Abstract: No abstract text available
    Text: FS2JI.FS2MI 3.0 Amp. Surface Mount Glass Passivated Rectifier DO-214AA / SMB Current 3.0 A Voltage 600 V to 1000 V R FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability


    Original     		PDF DO-214AA 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 Dec-11

    Untitled

    Abstract: No abstract text available
    Text: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier Current 1.0 A Voltage 200 V to 1000 V DFM FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated insertion • High forward surge current capability


    Original     		PDF HEDFM103G HEDFM107G 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11

    Q62702-F1494

    Abstract: No abstract text available
    Text: BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 900MHz OT-323 Q62702-F1494 Dec-11-1996 Q62702-F1494

    Q62702-F1490

    Abstract: No abstract text available
    Text: BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 900MHz OT-323 Q62702-F1490 Dec-11-1996 Q62702-F1490

    Untitled

    Abstract: No abstract text available
    Text: FUS1A.FUS1M 1.5 Amp. Surface Mount Glass Passivated Ultrafast Recovery Rectifier Current 1.5 A at 55ºC Voltage 50 to 1000 V R DO-214AC / SMA FEATURES • Low profile package • Ideal for automated placement • Ultrafast recovery time for high efficiency


    Original     		PDF DO-214AC 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 Dec-11

    Untitled

    Abstract: No abstract text available
    Text: HEDFS103G . HEDFS107G 1.0 Amp. Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifier DFS Current 1.0 A Voltage 200 V to 1000 V FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated placement • High forward surge current capability


    Original     		PDF HEDFS103G HEDFS107G 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW

    BC846W

    Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W

    P4C1024

    Abstract: No abstract text available
    Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial/Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE


    Original     		PDF P4C1024 --32-Pin

    sr206 diode

    Abstract: diode Sr 206 SR210
    Text: SR202 - SR215 2.0 Amp. Schottky Barrier Rectifier Current 2.0 A Voltage 20 V to 150 V DO-204AC / DO-15 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop


    Original     		PDF SR202 SR215 DO-204AC DO-15 2002/95/EC 2002/96/EC DO-15. MIL-STD-750 J-STD-002 sr206 diode diode Sr 206 SR210

    Untitled

    Abstract: No abstract text available
    Text: DF-SA 1.0 Amp. Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier Current 1.0 Amp. at 40ºC Voltage 600 V to 1000 V DFS FEATURES • Ideal for automated placement • High forward surge current capability • Solder dip 260ºC, 10s • Component in accordance to RoHS 2002/95/EC


    Original     		PDF 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11

    BC8488

    Abstract: H12E BC848 equivalent 1bs sot323
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW BC846BW BC8488 H12E BC848 equivalent 1bs sot323

    Untitled

    Abstract: No abstract text available
    Text: WM8234 w 140MSPS 6-Channel AFE with Sensor Timing Generation and LVDS/CMOS Data Output DESCRIPTION FEATURES The WM8234 is a 16-bit analogue front end/digitiser IC which processes and digitises the analogue output signals from CCD sensors or Contact Image Sensors CIS at pixel


    Original     		PDF WM8234 140MSPS WM8234 16-bit 23MSPS. 280mA

    Untitled

    Abstract: No abstract text available
    Text: WM8233 w 210MSPS 6-Channel AFE with Sensor Timing Generation and LVDS/CMOS Data Output DESCRIPTION FEATURES The WM8233 is a 16-bit analogue front end/digitiser IC which processes and digitises the analogue output signals from CCD sensors or Contact Image Sensors CIS at pixel


    Original     		PDF WM8233 210MSPS WM8233 16-bit 35MSPS. 350mA

    AK8111

    Abstract: FCXO-05
    Text: AKD8141 ＆ AK811x ver.2 AK8141&AK811x評価ボード AKD8141_811x AK811x 評価用 概要 AKD8141_8111x評価ボードはAK8141及び AK8111x製品共通の評価ボードです。 オーダリングガイド  AKD8141_811x_ver.2 ◆ 対象製品 1 AK8141


    Original     		PDF AKD8141 AK811x AK8141 AK811xè AKD8141 AK811x 8111xè AK8141å AK8111xè AK8111 FCXO-05

    Untitled

    Abstract: No abstract text available
    Text: B D REVISIONS SYM ZONE -S 3 - .6 2 0 .5 4 4 [1 5 .7 5 ] [1 3 .8 3 ] 105 .7 2 2 [1 8 .3 4 ] [2 .6 7 ] TYP. 4 ECN, ERN NO. DATE APPRD. /A B PROPOSAL PROPOSAL 0 6 /0 1 /1 1 L CHAN JAN 18,07 L CHAN C PROPOSAL APR 9 ,0 9 L.CHAN DEC11 /1 2 L.CHAN ADDING KEEP-OUT ZONE


    OCR Scan     		PDF DEC11

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FOR ALL 2 P U B L IC A T IO N R IG H T S LOC D IS T RESERVED. REVISIONS 50 AF D E S C R IP T IO N R EVISED PER E C R - 1 1-01 8063 2 1 DEC11 DWN APVD KH PD D D 23.24 -[.9 15] MAX CONTINUOUS STRIP ON


    OCR Scan     		PDF DEC11

    Untitled

    Abstract: No abstract text available
    Text: R E V IS IO N S SYM ERN NO. PROPOSAL DWG 4 .60 0 [1 5 .2 5 ] ECN, ZO NE .810 [2 0 .5 7 ] APPRD. DATE DEC11/08 L.CHAN .415 [1 0 .5 5 ] FRONT VIEW SIDE VIEW .10 0 [2 .5 4 ] TYP. .05 0 [1 .2 7 ] TYP. 0,O35±.OO2 [0O .89±O .O 5] HOLES 10 REQ’ D r .100 [2 .5 4 ]


    OCR Scan     		PDF DEC11/08 RJE09

    Untitled

    Abstract: No abstract text available
    Text: m i c r o e l e c t r o n i c s group Preliminary Data Sheet December 1997 Lucent Technologies Bell Labs Innovations TEC03264 32-Channel Echo Canceler Features Applications Overall Device • Digital terrestrial communication networks ■ Dual-convergence voice band echo canceler


    OCR Scan     		PDF TEC03264 32-Channel 64-clear 5-2132r 160-Pin DS98-036TIC DS97-152TIC

    5252 F

    Abstract: "5252 F" THR15 H-38-9 SVTD "switching office" svts 052 Motorola 0X69 TEC032642 ATM H008
    Text: Data Sheet August 1999 microelectronics group Lucent Technologies Bell Labs Innovations TEC03264 32-Channel Echo Canceller Features Applications Overall Device • ■ ■ ■ ■ Dual-convergence voiceband echo canceller EC . ■ 32 independent and individually controlled echo


    OCR Scan     		PDF TEC03264 32-Channel 64-clear. DS99-241PDH DS98-409TIC) 5252 F "5252 F" THR15 H-38-9 SVTD "switching office" svts 052 Motorola 0X69 TEC032642 ATM H008