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    DE-275 101N30 Search Results

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    IXYS Corporation DE275-101N30A

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    DE-275 101N30 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DE-275-101N30 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-101N30-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-101N30-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF

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    DE-275 101N30

    Abstract: Directed Energy 101N30 DE-275
    Text: PRELIMINARY SPECIFICATIONS DE-275 101N30 30A, 100V, 0.05Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-275 101N30 250mA 150oC DE-275 101N30 Directed Energy 101N30

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics