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    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP DDR3L-1866

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8

    MT41K256M8DA

    Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
    Text: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •


    Original     		PDF MT41J512M4 MT41J256M8 MT41J128M16 09005aef84bd8f53 MT41K256M8DA MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K

    K4B4G0846C

    Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
    Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B4G0446C K4B4G0846C 78FBGA K4B4G0846C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866

    K4B2G0846D

    Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
    Text: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446D K4B2G0846D 78FBGA K4B2G0846D K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D-HCH9

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B2873GB0 M471B5673GB0 204pin 78FBGA K4B1G0846G 128Mbx8 256Mx64

    MT9JSF25672AZ-2G1

    Abstract: micron ddr3 2133 MT4J128M8
    Text: 1GB, 2GB x72, ECC, SR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT9JSF12872AZ – 1GB MT9JSF25672AZ – 2GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C D1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, unbuffered dual in-line memory module


    Original     		PDF 240-Pin MT9JSF12872AZ MT9JSF25672AZ 240-pin, PC3-17000, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 MT9JSF25672AZ-2G1 micron ddr3 2133 MT4J128M8

    hynix ddr3

    Abstract: ddr3 2133 DDR3-2133 DDR3-1333 DDR3-1866 780max
    Text: DDR3 Device Operation DDR3 SDRAM Device Operation 1 DDR3 Device Operation Contents 1. Functional Description 1.1 Simplified State Diagram 1.2 Basic Functionality 1.3 RESET and Initialization Procedure 1.3.1 Power-up Initialization Sequence 1.3.2 Reset Initialization with Stable Power


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C


    Original     		PDF IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 cycles/64 cycles/32 3TR81280BL -125JBL

    Untitled

    Abstract: No abstract text available
    Text: ‘H’ Part number Last Updated: May. 2012 H 5 T Q XX X X X X X - XX X 1 2 3 4 56 7 8 9 10 11 12 13 14 HYNI X MEMORY OPERATI NG TEMPERATURE & POWER CONSUMPTI ON PRODUCT FAMI LY 5 : DRAM C : Commercial Temp1 & Normal Power L : Commercial Temp1) & Low Power


    Original     		PDF DDR3-2133 DDR3-1866 DDR3-1600 DDR3-1333 DDR3-1066 DDR3-800

    Untitled

    Abstract: No abstract text available
    Text: 4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ4G43AFR-xxC H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC * SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 / Apr. 2013 1 Revision History Revision No. History


    Original     		PDF H5TQ4G43AFR-xxC H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC 96Ball

    h5tq2g63bfr

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ2G83BFR-xxC H5TQ2G83BFR-xxI H5TQ2G83BFR-xxL H5TQ2G83BFR-xxJ H5TQ2G63BFR-xxC H5TQ2G63BFR-xxI H5TQ2G63BFR-xxL H5TQ2G63BFR-xxJ * Hynix Semiconductor reserves the right to change products or specifications without notice.


    Original     		PDF H5TQ2G83BFR-xxC H5TQ2G83BFR-xxI H5TQ2G83BFR-xxL H5TQ2G83BFR-xxJ H5TQ2G63BFR-xxC H5TQ2G63BFR-xxI H5TQ2G63BFR-xxL H5TQ2G63BFR-xxJ 96Ball h5tq2g63bfr

    M471B5173

    Abstract: No abstract text available
    Text: Rev. 1.0, Apr. 2012 M471B5173CB0 M471B1G73CB0 204pin Unbuffered SODIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B5173CB0 M471B1G73CB0 204pin 78FBGA estoppel512M K4B4G0846C 512Mx8 1Gx64 M471B5173

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Mar. 2012 K4B2G0446E K4B2G0846E 2Gb E-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446E K4B2G0846E 78FBGA

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •


    Original     		PDF IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 cycles/64 cycles/32 IS46TR85120AL -15HBLA2

    Untitled

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 1.5 /Dec. 2010 1 Revision History


    Original     		PDF H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI DDR3-800 DDR3-1600) 96Ball

    H5TQ1G63DFR

    Abstract: H5TQ1G83DFR
    Text: 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G83DFR-xxL H5TQ1G83DFR-xxJ H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI H5TQ1G63DFR-xxL H5TQ1G63DFR-xxJ *Hynix Semiconductor reserves the right to change products or specifications without notice


    Original     		PDF H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G83DFR-xxL H5TQ1G83DFR-xxJ H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI H5TQ1G63DFR-xxL H5TQ1G63DFR-xxJ 96Ball H5TQ1G63DFR H5TQ1G83DFR

    512mb 96 ball

    Abstract: H5TQ1G63DFR A1073 h5tq1g83 H5TQ1G63DF
    Text: 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 1.3 /Dec. 2010 1 Revision History


    Original     		PDF H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI DDR3-800 DDR3-1600) 96Ball 512mb 96 ball H5TQ1G63DFR A1073 h5tq1g83 H5TQ1G63DF

    NT5CB256M16bP-DI

    Abstract: NT5CB256M16 NT5CC512M8BN NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP
    Text: NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP Speed Bins -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Units tCK Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Clock Frequency


    Original     		PDF NT5CB512M8BN NT5CB256M16BP NT5CC512M8BN NT5CC256M16BP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 NT5CB256M16bP-DI NT5CB256M16 NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP

    NT5CB64M16DP

    Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units


    Original     		PDF NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066-CL7) DDR3/L-1333-CL8) DDR3/L-1600-CL10) DDR3-1866-CL11) NT5CB64M16DP nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m

    NT5CC256

    Abstract: NT5CB256M16 512M8CN NT5CC256M16
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP DDR3L-1866 NT5CC256 NT5CB256M16 NT5CC256M16

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 L SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 2133 2,3  TDQS and /TDQS pair for X8  DDR3 - 1866


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP P147-150, NT5CC128M16FP-DIA NT5CC128M16FP-DIH