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    DDR3 64MX8 Search Results

    DDR3 64MX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TS3DDR3812RUAR Texas Instruments 12-channel, 1:2 MUX & DEMUX switch for DDR3 applications 42-WQFN -40 to 85 Visit Texas Instruments Buy
    SSTE32882HLBAKG Renesas Electronics Corporation DDR3 Register + PLL Visit Renesas Electronics Corporation
    SSTE32882HLBAKG8 Renesas Electronics Corporation DDR3 Register + PLL Visit Renesas Electronics Corporation
    4MX0121VA13AVG Renesas Electronics Corporation Switch / Multiplexer for DDR3 / DDR4 NVDIMM Visit Renesas Electronics Corporation
    4MX0121VA13AVG8 Renesas Electronics Corporation Switch / Multiplexer for DDR3 / DDR4 NVDIMM Visit Renesas Electronics Corporation

    DDR3 64MX8 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    samsung ddr3

    Abstract: DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket
    Text: Samsung DDR3 SDRAM Next-Generation Memory Will Reach 1.6Gb/second Samsung DDR3 Unbuffered DIMMs will be available in densities from 256MB to 2GB and DDR3; component densities are 512Mb to 1Gb. Massive Bandwidth and Low Power Consumption Tomorrow’s main memory standard, Samsung


    Original     		256MB 512Mb Samsun378B2873CZ0-C 128Mx8) 256Mx64 M378B5673CZ0-C DS-06-DRAM-006 samsung ddr3 DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket PDF

    ddr3

    Abstract: DDR3 SDRAM Samsung ddr3 1600 SDRAM DDR3 64MX8 K4B511646E-ZCF8 DDR3 "application note" DDR3 SDRAM Document
    Text: Preliminary DDR3 SDRAM 512Mb E-die DDR3 SDRAM 512Mb E-die DDR3 SDRAM Specification August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		512Mb ddr3 DDR3 SDRAM Samsung ddr3 1600 SDRAM DDR3 64MX8 K4B511646E-ZCF8 DDR3 "application note" DDR3 SDRAM Document PDF

    Untitled

    Abstract: No abstract text available
    Text: SG572288FH8D0UU January 23, 2008 Ordering Information Part Numbers Description Module Speed SG572288FH8D0KA 128Mx72 1GB , DDR3, 240-pin Unbuffered DIMM, ECC, 64Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG572288FH8D06B


    Original     		SG572288FH8D0UU SG572288FH8D0KA 128Mx72 240-pin 64Mx8 DDR3-800-555, PC3-6400 SG572288FH8D06B PDF

    K/DDR31066-666

    Abstract: No abstract text available
    Text: SG572648FH8D0UU March 27, 2008 Ordering Information Part Numbers Description Module Speed SG572648FH8D0KA 64Mx72 512MB , DDR3, 240-pin Unbuffered DIMM, ECC, 64Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG572648FH8D06B


    Original     		SG572648FH8D0UU SG572648FH8D0KA 64Mx72 512MB) 240-pin 64Mx8 DDR3-800-555, PC3-6400 SG572648FH8D06B K/DDR31066-666 PDF

    A110 E

    Abstract: TSW11
    Text: Preliminary 512Mb DDR3 SDRAM K4B510846E 512Mb E-die DDR3 SDRAM Specification Revision 0.5 December 2006 CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		K4B510846E 512Mb A110 E TSW11 PDF

    K4B510846E-ZC

    Abstract: No abstract text available
    Text: Preliminary Unbuffered DIMM DDR3 SDRAM DDR3 SDRAM Specification January 2007 revision 0.1 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		64Mbx8 128Mx64/x72 K4B510846E-ZC PDF

    HYMP512S64CP8-Y5

    Abstract: HYMP564S64CP6-Y5 H5TQ1G63BFR-H9C h5ps2g83afr-s6c H5PS1G63EFR-Y5C H5TQ1G83BFR-H9C HYMP564S64CP6-C4 HY5PS121621Cfp-y5 H5PS1G63EFR-S5C HY5PS12821CFP-Y5
    Text: Q3’2009 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43AFP-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43BFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C


    Original     		256Mx4 H5TQ1G43AFP-H9C 78ball) H5TQ1G43BFR-H9C H5TQ1G43TFR-H9C H5TQ1G43AFP-G7C H5TQ1G43BFR-G7C HYMP512S64CP8-Y5 HYMP564S64CP6-Y5 H5TQ1G63BFR-H9C h5ps2g83afr-s6c H5PS1G63EFR-Y5C H5TQ1G83BFR-H9C HYMP564S64CP6-C4 HY5PS121621Cfp-y5 H5PS1G63EFR-S5C HY5PS12821CFP-Y5 PDF

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


    Original     		256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR PDF

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G PDF

    samsung ddr3

    Abstract: DDR3 sodimm 8gb samsung M395T2953EZ4 DDR3 DIMM 240 pin names m470t5663cz3 samsung DDR3 SDRAM 2GB 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM
    Text: Samsung High-performance SDRAM for Main Memory DDR2 and DDR3 Deliver High Bandwidth with Low Power Consumption for Servers, Desktops and Portables Advanced Samsung Memory for Computing Applications First to Market with Advanced SDRAM Double Date Rate SDRAM is today’s standard for high-performance servers, desktops and portable


    Original     		BR-07-SDRAM-001 samsung ddr3 DDR3 sodimm 8gb samsung M395T2953EZ4 DDR3 DIMM 240 pin names m470t5663cz3 samsung DDR3 SDRAM 2GB 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM PDF

    Untitled

    Abstract: No abstract text available
    Text: EM47FM0888MBA 4Gb 64Mx8Bank×8 Double DATA RATE 3 low voltage SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.35V(1.283-1.45V) • All inputs and outputs are compatible with SSTL_15 interface. • Fully differential clock inputs (CK, /CK) operation.


    Original     		EM47FM0888MBA 78Ball-FBGA PDF

    EM47FM0888SBA

    Abstract: No abstract text available
    Text: EM47FM0888SBA 4Gb 64Mx8Bank×8 Double DATA RATE 3 low voltage SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.5V±0.075V • All inputs and outputs are compatible with SSTL_15 interface. • Fully differential clock inputs (CK, /CK) operation.


    Original     		EM47FM0888SBA 78Ball-FBGA EM47FM0888SBA PDF

    EM47FM3288SBB

    Abstract: No abstract text available
    Text: EM47FM3288SBB 16Gb 64Mx8Bank×32 Double DATA RATE 3 Stack SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.5V±0.075V. • All inputs and outputs are compatible with SSTL_15 interface. • Fully differential clock inputs (CK, /CK) operation. • Eight Banks


    Original     		EM47FM3288SBB 136Ball-FBGA EM47FM3288SBB PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 EM47FM3288SBB 16Gb 64Mx8Bank×32 Double DATA RATE 3 Stack SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.5V±0.075V. • All inputs and outputs are compatible with SSTL_15 interface. • Fully differential clock inputs (CK, /CK) operation.


    Original     		EM47FM3288SBB 136Ball-FBGA PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 PDF

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd PDF

    IS43LR32640

    Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and


    Original     		i1-44-42218428 IS43LR32640 is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168 PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    88F6W11

    Abstract: No abstract text available
    Text: 88F6710/6707/6W11 Functional Specifications 88F6710, 88F6707, and 88F6W11 ARMADA 370 SoC Functional Specifications – Unrestricted Doc. No. MV-S107979-U0, Rev. B May 26, 2014, Preliminary Marvell. Moving Forward Faster Document Classification: Proprietary Information


    Original     		88F6710/6707/6W11 88F6710, 88F6707, 88F6W11 MV-S107979-U0, 88F6710/6707/6W11 MV-S107979-U0 88F6W11 PDF

    MV78230

    Abstract: Xelerated tcam ARMADA 300 ECC ARMADA® XP MP Core Highly Integrated Marvell ARMv7 SoC Processors Datasheet
    Text: MV78230/78x60 Functional Specifications MV78230, MV78260, and MV78460 ARMADA XP Family of Highly Integrated Multi-Core ARMv7 Based SoC Processors Functional Specifications – Unrestricted Doc. No. MV-S107021-U0, Rev. A May 29, 2014, Preliminary Marvell. Moving Forward Faster


    Original     		MV78230/78x60 MV78230, MV78260, MV78460 MV-S107021-U0, MV78230/78x60 MV-S107021-U0 MV78230 Xelerated tcam ARMADA 300 ECC ARMADA® XP MP Core Highly Integrated Marvell ARMv7 SoC Processors Datasheet PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    K4H510438D-ZCB3

    Abstract: K4H510438DZCCC tsop-ii 66PIN JEDEC TRAY "Material Declaration Sheet" tsop-ii 66 JEDEC TRAY k4h511638d
    Text: K4H510438D K4H510838D K4H511638D DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H510438D K4H510838D K4H511638D 512Mb 430KB 438KB 204KB DDR266/333, 66TSOP2) 430KB K4H510438D-ZCB3 K4H510438DZCCC tsop-ii 66PIN JEDEC TRAY "Material Declaration Sheet" tsop-ii 66 JEDEC TRAY k4h511638d PDF