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    ECJ1VC1H101K

    Abstract: l 5010 mh A114 A115 JESD22 JESD78 NCP5214A NCP5214AMNR2G V1836 smd schottky diode marking s4
    Text: NCP5214A 2−in−1 Notebook DDR Power Controller The NCP5214A 2−in−1 Notebook DDR Power Controller is specifically designed as a total power solution for notebook DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of linear


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    PDF NCP5214A NCP5214A ECJ1VC1H101K l 5010 mh A114 A115 JESD22 JESD78 NCP5214AMNR2G V1836 smd schottky diode marking s4

    CE1X

    Abstract: 70V7339 A12L IDT70V7339 IDT70V7339S
    Text: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7339S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks


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    PDF IDT70V7339S 166MHz 133MHz) 12Gbps SMEN-01-05 CE1X 70V7339 A12L IDT70V7339 IDT70V7339S

    IDT70V3399

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 256/128K x 18 IDT70V3319/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Š Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz) (max.)


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    PDF 256/128K IDT70V3319/99S 166MHz 133MHz) 128-pin IDT70V3399

    A17R-A0R

    Abstract: A17L-A0L 7144
    Text: HIGH-SPEED 1.8V 256/128K x 36 IDT70P3519/99 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V/2.5V/1.8V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location Low Power High-speed data access


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    PDF 256/128K IDT70P3519/99 200MHz 166MHz) 14Gbps 200MHz 5T2010 5T9010 A17R-A0R A17L-A0L 7144

    IDT70T3319

    Abstract: IDT70T3399
    Text: HIGH-SPEED 2.5V 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Š Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access


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    PDF 512/256/128K IDT70T3339/19/99S 200MHz 166MHz 133MHz) 14Gbps IDT70T3319 IDT70T3399

    IDT70T631

    Abstract: A18L
    Text: Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T633/1S HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 8/10/12/15ns max.


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    PDF IDT70T633/1S 512/256K 8/10/12/15ns 10/12ns IDT70T633/1 IDT70T631 A18L

    r305 finger print module

    Abstract: PCI7412 SP8K10S CLEVO JSPK1 samsung led tv power supply diagrams ALC260 amplifer 88e8038 Marvell 88E8038 TCD42A
    Text: Preface Notebook Computer M62NC Series Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


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    PDF M62NC C197D80 TZ3332 TZ3333 TZ3334 TZ3335 TZ3336 TZ3337 TZ3338 r305 finger print module PCI7412 SP8K10S CLEVO JSPK1 samsung led tv power supply diagrams ALC260 amplifer 88e8038 Marvell 88E8038 TCD42A

    V3V REV-1.1

    Abstract: asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG
    Text: A B C D E A8J/F SCHEMATIC R11 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU


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    PDF LPC47N217 RTL8111B PCI--1394 R5C832 12VSUS JP6302 V3V REV-1.1 asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG

    NSK 5b 4.096

    Abstract: RC410 RC410ME QUANTA ZL9 ICS951413CGLFT PCI7412 ev C703 Capacitor NSK CL-2M2012-900JT NSK XTAL
    Text: 1 2 3 VCC_CORE CPU CORE 4 5 6 7 ZB3 X'TAL 14.31818MHz +1.5V_RUN MAX8736 8 VGA option Page:31 A +1.2V SC1470 VCCP_+1.05V (MAX1992) +1.2V ICS951413CGLFT MAX1993 INTEL Mobile_479 CPU SOCKET_M Page:5 VCCP_+1.05V +1.0V/+1.2V VGA Power Yonah/Yonah Celeron-M Clock generator


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    PDF MAX8736 31818MHz SC1470) MAX1992) ICS951413CGLFT MAX1993 128MB/256MB NCP5214) 533/667MHZ NSK 5b 4.096 RC410 RC410ME QUANTA ZL9 ICS951413CGLFT PCI7412 ev C703 Capacitor NSK CL-2M2012-900JT NSK XTAL

    SP8K10

    Abstract: rqa180n03 rqa200n03 nvidia c51mv cpu schematic MCP51 rqa130n03 C51MV MCP51 6-71-M55J0-004 Preface Notebook Computer
    Text: Preface Notebook Computer M540J/M545J/M550J/M555J Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


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    PDF M540J/M545J/M550J/M555J RJ-45 SPUAZ-10S2-VB-040-1-R C237D91 C237D107 2N3906 Z4401 Z4403 2N3906 SP8K10 rqa180n03 rqa200n03 nvidia c51mv cpu schematic MCP51 rqa130n03 C51MV MCP51 6-71-M55J0-004 Preface Notebook Computer

    IDT70T631

    Abstract: 70T633
    Text: Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T633/1S HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 8/10/12/15ns max.


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    PDF IDT70T633/1S 512/256K 8/10/12/15ns 10/12ns IDT70T633/1 IDT70T631 70T633

    tube 5670

    Abstract: 5670 tube IDT70T631 IDT BGA256
    Text: Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T633/1S HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access


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    PDF IDT70T633/1S 512/256K 8/10/12/15ns 10/12ns IDT70T633/1 144-pin DD-144) F-08-01 70T651/9 70T633/1 tube 5670 5670 tube IDT70T631 IDT BGA256

    SEM t11

    Abstract: A12L A13L IDT70V639 IDT70V639S 70V639S10
    Text: PRELIMINARY IDT70V639S HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.


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    PDF IDT70V639S 10/12/15ns 12/15ns IDT70V639 SEM t11 A12L A13L IDT70V639S 70V639S10

    108 option k5

    Abstract: 70T633
    Text: Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T633/1S HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 8/10/12/15ns max.


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    PDF 512/256K IDT70T633/1S 8/10/12/15ns 10/12ns IDT70T633/1 108 option k5 70T633

    70T3539M

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)


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    PDF IDT70T3539M 166MHz 133MHz) 12Gbps 166MHz 256-pin BC-256) 70T3539M

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 256/128K x 18 IDT70V3319/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz) (max.)


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    PDF 256/128K IDT70V3319/99S 166MHz 133MHz) 128-pin

    Untitled

    Abstract: No abstract text available
    Text: i|g; m I | • ''• d m r 1 M L HIGH-SPEED 3.3V 16K x 36 | SYNCHRONOUS PIPELINED DUAL-PORT STATIC ra m PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access


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    PDF IDT70V3569S

    Untitled

    Abstract: No abstract text available
    Text: •$:»£ V HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3389S F ea tu re s: True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed clock to data access * - Com m ercial: 5/6ns max.


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    PDF IDT70V3389S 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 1»ill 1IFV1F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access


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    PDF IDT70V3569S 100nd

    Untitled

    Abstract: No abstract text available
    Text: •$:»£ V HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3379S F ea tu re s: * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access - * * * * Com m ercial: 5/6ns max.


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    PDF IDT70V3379S

    Untitled

    Abstract: No abstract text available
    Text: I l i l l l 1 IF V 1 F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3379S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access o f the same memory location ♦ High-speed clock to data access


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    PDF IDT70V3379S

    Untitled

    Abstract: No abstract text available
    Text: 1» i l l 1 I F V 1 F III 11 Jl 1 ‘! S y P r • L HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3579S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location


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    PDF IDT70V3579S 100MHz

    a19t

    Abstract: TC58FVB160FT 1X16 D8000H-DFFFFH
    Text: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only e lectrically erasable and program m able


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    PDF TC58FVT160/B160FT-85 16-MBIT TC58FVT 160/B TC58FVT160/B160 48-pin a19t TC58FVB160FT 1X16 D8000H-DFFFFH

    027R

    Abstract: 351N 70V3579 A12L IDT70V3579 IDT70V3579S
    Text: HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V I/O PRELIMINARY IDT70V3579S Features: * * * * * * True Dual-Port memory cells which allow simultaneous access o f the same memory location High-speed clock to data access


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    PDF IDT70V3579S 133MHz 133MHz 133MHz, 027R 351N 70V3579 A12L IDT70V3579 IDT70V3579S