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    stp53n06

    Abstract: STP53 i237
    Text: 7 ^ 2 3 7 OOMLSlfl 3Sfl • S 6 T H SGS-THOMSON S T P 5 3 N 06 ia j g « § N ^CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R ds(oü Id STP53N06 60 V < 0.025 a 53 A Q • TYPICAL RDS(on) = 0.022 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


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    PDF STP53N06 DD4b524 STP53N06 STP53 i237