DD40127 Search Results

a1t diode

Abstract: No abstract text available
Text: Advanced Power MOSFET S F W FEATURES • ■ ■ ■ ■ ■ /I9 6 4 4 BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10jiA M ax. @ VOS= -250V