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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs C-Band Features • High power • PidB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G-idB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package	OCR Scan	PDF	TIM5053-8 2-11D1B) MW50610196 Q022M21 DD22422

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs C-Band Features • High power • PidB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G-idB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package

OCR Scan

PDF

TIM5053-8 2-11D1B) MW50610196 Q022M21 DD22422