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Abstract: No abstract text available
Text: MSE D • ‘ÌO'ÌTSSD TOSHIBA TOSHIBA TRANSISTOR 2 DD17777 «T O S ii DISCRETE/OPTO 2N5550 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FO R G E N E R A L P U R P O S E USE HIGH V O L T A G E AMPLIFIER APPLICATIONS. . High C ollector Breakdown Voltage •'
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DD17777
2N5550
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
R1001B
D0177fiD
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18-PIN
Abstract: 26-PIN ZIP20-P-400 MSM OKI
Text: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
b724S40
L724240
18-PIN
26-PIN
ZIP20-P-400
MSM OKI
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Untitled
Abstract: No abstract text available
Text: Optical disc ICs $ </> V CO with sensitivity adjustment function I 5 BA7042 The BA7042 is a monolithic 1C comprising a VCO voltage controlled oscillator with sensitivity adjusting capabilities. The oscillation frequency can be set with an external constant, and is controlled according to the control voltage.
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BA7042
BA7042
0D177Ã
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