FMMTA42
Abstract: dd sot89 BFN16 BFN17
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BFN16 ✪ ISSUE 3 - OCTOBER 1995 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage V CEO
|
Original
|
BFN16
BFN17
20MHz
FMMTA42
dd sot89
BFN16
BFN17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use FZTA42 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BFN16 ✪ ISSUE 3 - OCTOBER 1995 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
|
Original
|
FZTA42
BFN16
BFN17
20MHz
FMMTA42
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PART OBSOLETE - USE FZTA42 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BFN16 ✪ ISSUE 3 - OCTOBER 1995 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage
|
Original
|
FZTA42
BFN16
BFN17
20MHz
FMMTA42
|
PDF
|
Carrier tape for TO263 package
Abstract: No abstract text available
Text: Advanced Monolithic Systems Packaging for Automatic Handling Tape & Reel and Ammo Pack Tape and Reel Packing Ammo Pack Tape and reel packing is available for all SO, SOT-223, TO-92, DD and D packages. Surface mount packages are retained in an embossed carrier tape
|
Original
|
OT-223,
SO-14
356mm
O92TR
Carrier tape for TO263 package
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS87 Rev. 1.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 240 V 6 W 0.26 A RDS on · Enhancement mode ID · Logic Level · dv/dt rated P-SOT89-4-2 1 2 3 2 VPS05558 Type Package Ordering Code Tape and Reel Information Marking
|
Original
|
BSS87
P-SOT89-4-2
VPS05558
Q62702-S506
L6327:
|
PDF
|
P-SOT89-4-2
Abstract: BSS87 E6327 Q62702-S506 VPS05558
Text: BSS87 Rev. 1.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 240 V 6 W 0.26 A RDS on · Enhancement mode ID · Logic Level · dv/dt rated P-SOT89-4-2 1 2 3 2 VPS05558 Type Package Ordering Code Tape and Reel Information Marking
|
Original
|
BSS87
P-SOT89-4-2
VPS05558
Q62702-S506
E6327:
P-SOT89-4-2
BSS87
E6327
Q62702-S506
VPS05558
|
PDF
|
P-SOT89-4
Abstract: BSS87 E6327 Q67000-S506
Text: BSS87 Rev. 1.0 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 240 V 6 W 0.26 A RDS on · Enhancement mode ID · Logic Level · dv/dt rated P-SOT89-4-1 1 2 3 2 VPS05558 Type Package Ordering Code Tape and Reel Information Marking
|
Original
|
BSS87
P-SOT89-4-1
VPS05558
P-SOT89-4-2
Q67000-S506
E6327:
P-SOT89-4
BSS87
E6327
Q67000-S506
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated • Qualified according to AEC Q101 SOT89 Type Package Pb-free Tape and Reel Information
|
Original
|
BSS225
L6327:
3000PCS/reel
JESD22A114HBM
|
PDF
|
BSS225
Abstract: L6327
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes
|
Original
|
BSS225
L6327:
3000PCS/reel
BSS225
L6327
|
PDF
|
MARKING KD
Abstract: BSS225
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes
|
Original
|
BSS225
L6327:
3000PCS/reel
MARKING KD
BSS225
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated • Qualified according to AEC Q101 SOT89 Type Package Pb-free Tape and Reel Information
|
Original
|
BSS225
L6327:
3000PCS/reel
|
PDF
|
ISS 99 diode
Abstract: BSS225 L6327
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level,dv/dt rated • Pb-free lead plating; RoHS compliant SOT89 Type Package Pb-free Tape and Reel Information
|
Original
|
BSS225
L6327:
3000PCS/reel
ISS 99 diode
BSS225
L6327
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated • Qualified according to AEC Q101 SOT89 • Halogenfree according to IEC61249221
|
Original
|
BSS225
IEC61249Â
H6327:
3000PCS/reel
|
PDF
|
PG-SOT89
Abstract: BSS225 dd sot89 E6327 Q67042-S4266
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT89 Type Package Ordering Code
|
Original
|
BSS225
PG-SOT89
Q67042-S4266
E6327:
3000PCS/reel
PG-SOT89
BSS225
dd sot89
E6327
Q67042-S4266
|
PDF
|
|
|
BSS225
Abstract: No abstract text available
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Ordering Code Tape and Reel Information Marking BSS225 SOT89
|
Original
|
BSS225
Q67042-S4266
E6327:
3000PCS/reel
BSS225
|
PDF
|
matching circuit of atf 52189
Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
Text: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high
|
Original
|
ATF-52189
ATF-52189
ATF-521P8
5989-4040EN
matching circuit of atf 52189
BLM21PG600SN1D
53189
ATF-521P8
ATF-53189
RO4350
depletion mode PHEMT .s2p
|
PDF
|
le2m
Abstract: BFN17
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 O COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD BFN16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 250 V -V « o 250 V ^EBO 5 V Collector-Base Voltage C ollector-E m itter Voltage
|
OCR Scan
|
BFN16
BFN17
100jiA
fc-20m
lc-20m
20MHz
300us.
FMMTA42
le2m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 £ _ CO M PLEM ENTARY T Y P E - BFN17 PARTMARKING DETAILS - DD ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V cbo 250 V V CEO 250 V V ebo 5 V mA PARAMETER SYMBOL Collector-Base Voltage
|
OCR Scan
|
BFN17
lc-10m
300us.
FMMTA42
|
PDF
|
ED 89A diode
Abstract: Micronas HA 24 hall effect sensor SOT-89x ED 89A marking code
Text: HAL320 Differential Hall Effect Sensor 1C in CMOS technology Introduction - reverse-voltage protection of V DD-pin - short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz The H AL320 is a differential Hall switch produced in
|
OCR Scan
|
HAL320
HAL320
OT-89x:
O-92UA:
ED 89A diode
Micronas HA 24
hall effect sensor
SOT-89x
ED 89A marking code
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CR02AM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 LG dd~M O U nt Phase Control SCR 0.3 Amperes/400 Volts Description: The Powerex CR02AM Phase Control SCRs are planar passivat ed thyristors for use in low power control and rectification. These
|
OCR Scan
|
CR02AM
Amperes/400
CR02AM
MAX/10
|
PDF
|
BFQ17
Abstract: ILC - DATA DEVICE
Text: motorola sc -c x s t r s / r f > DE |t,3b?aSM DD?flb47 7 |~D T- 3 / - Ì - 3 MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA RF TRANSISTOR M A XIM U M RATINGS NPN SILICON Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 V Collector-Emitter Voltage {RBE « 50 n
|
OCR Scan
|
BFQ17
BFQ17
ILC - DATA DEVICE
|
PDF
|
NJM78LR05
Abstract: No abstract text available
Text: NJM78LR05 • J - \l v USE i *S » w N JM 7 8 LRO » » £ fc ¿ 1 S T L t z t ê l z ' J i z y *ICI*TV. lit h fê ^ tflg iÈ L i t . U ï a vSKOv-f a^vX-T-i» « o = 1 5 0 m A •m a rn a s NJM78LR05BD/CD/DD NJM78LR05BM/CM/DM NJM78LR05BL/CL/DL NJB78LR05BU/CU/DU
|
OCR Scan
|
NJM78LR05
OT-89
NJN78LR05DX
NJM78LR05CX
NJM78LR05DX
NJM78LR05BD/CD/D0
NJM78LR05BM/CM/DM
NJH78LR05BL/CL/DL
NJH78LR05BU/CU/DU
NJM78LR05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PINNING - SOT89 FEATUR ES • Low drain-source on-state resistance PIN • Direct interface to C-MOS, TTL, etc. 1 2 3 • High-speed switching • No secondary breakdown.
|
OCR Scan
|
cu500
MLC697
MDA176
|
PDF
|
DA178
Abstract: No abstract text available
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - SOT89 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL • High-speed switching 1 s source DESCRIPTION • No secondary breakdown. 2 d drain
|
OCR Scan
|
DA178
Jun20
DA178
|
PDF
|