B2HKF
Abstract: thyristor TT 430 N 22 TT 46 N 800 TT 56 N thyristor tt 250 n 16 thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 121 thyristor TT 430 thyristor tt 500 n 16
Text: ISOPACK Modules Type ISOPACK Module VDRM, VRRM IFRMSM V A VDSM = VDRM VRSM = VRRM + 100 V IFSM ∫ i²dt Id/tC A A²s A/°C V TO 10 ms, tvj 10 ms, tvj max max rT RthJC RthCK tvj max °C V mΩ °C/W °C/W tvj = tvj max tvj = tvj max per arm per arm Single phase diode bridges
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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 61 S M5x11 Z4-1 15,5 20 20 80 92 AK K A March 1998 DD 61 S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Spitzensperrspannung
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M5x11
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DD61S
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 61 S M5x11 Z4-1 15,5 20 20 80 92 AK K A March 1998 DD 61 S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Spitzensperrspannung
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M5x11
DD61S
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 61 S M5x11 Z4-1 15,5 20 20 80 92 AK K A March 1998 DD 61 S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Spitzensperrspannung
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M5x11
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 61 S M5x11 Z4-1 15,5 20 20 80 92 AK K A March 1998 DD 61 S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Spitzensperrspannung
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M5x11
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DDQ1244
Abstract: powerblock DD 76 N 1200
Text: EUPEC blE D m 34032^7 □001EM3 b74 HIUPEC DD 61 N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Periodische Spitzensperrspannung repetitive p e ak reverse voltage tvj — Stoßspitzenspannung non repetitive peak
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001EM3
tvjS25Â
DDQ1244
powerblock DD 76 N 1200
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EUPEC powerblock
Abstract: dd 76 N powerblock eupec dd 76 n 1200 powerblock DD 76 N 1200
Text: EUPEC blE D • 34032^7 G0012M3 b74 H U P E C DD 61 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t vj — Stoßspitzenspannung non repetitive peak
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01EL43
EUPEC powerblock
dd 76 N powerblock
eupec dd 76 n 1200
powerblock DD 76 N 1200
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TM P04060F-XXX JTM P04060-XXXS TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM P04060F-XXX(JTM P04060-XXXS) CMOS 4-BIT LL MICROCONTROLLER (LL : LOW POWER CONSUMPTION & VOLTAGE OPERATION MICROCONTROLLER) ♦ OUTLINE The TMP04060F-XXX is an advanced microcontroller
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P04060F-XXX
P04060-XXXS)
TMP04060F-XXX
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LT 1021
Abstract: No abstract text available
Text: TOSHIBA TMP04CH00FXXX JTMP04CH00XXXS TOSHIBA CMOS DIGITAL LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TMP04CH00FXXX(JTMP04CH00XXXS) C M O S 4BIT LL M ICRO CO NTRO LLER (LL : LO W PO W ER C O N S U M P T IO N & VO LTAGE O PERATIO N M ICRO CO NTRO LLER) ♦ o u t l in e
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TMP04CH00FXXX
JTMP04CH00XXXS)
Oscillatin1193
LT 1021
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dd 127 dd 127 d
Abstract: No abstract text available
Text: Rectifier Diode Modules Type V rrm I frmsm Ifsm V A VRSM = VRRM A 10 ms, + 100 V ^vjmax J i2dt A2s 10ms, •103 rT I fAVM^c V TO A/°C V mQ tvj = tij = ^vj max max RthJC RfhCK tvj max °c/w °C /W °C outline 180° el sin Baseplate = 20 mm DD 31 N 800.1600
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DD 127 D
Abstract: DD 31 N 800 K DD 65 N 800 K dd 127 dd 127 d dd 61 n 600 dd 127 DD 90 QDD2172 DD 61 N 800 K DD 105 N 16 L
Text: Rectifier Diode Modules Type V rrm I frmsm Ifsm V VRSM = VRRM + 100 V A A 10 ms, ^vjmax J i2dt A2s 10ms, •103 I fAVM^c V TO A /°C V rT RthJC RfhCK tvj max °C /W °C outline tvj = ^vj max tij = max ° c /w 180° el sin 0,8 7 1,2 0,2 150 77 0,75 3,1 0,78
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00D2173
DD 127 D
DD 31 N 800 K
DD 65 N 800 K
dd 127 dd 127 d
dd 61 n 600
dd 127
DD 90
QDD2172
DD 61 N 800 K
DD 105 N 16 L
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din 6900
Abstract: TT 46 N 12 TT60N TT 93 N 08 DIN 46 244 TT105N AD116s TT95N din 46247 4.8 DIN 46247
Text: Outlines 6,3 * 0 8 I ,7 1 4=*„ -0 i i_ l i/ i 2 case C: 0 = M6, case U: 0 = 1/4” case B -►I2- 4 case C: 0 = M8, case U: 0 = 1 /4 - 2 8 U N F - 2 A case B case E v00' - * 1 I-1 J— ‘ J L 3,5x 2 - s 38 * 2 3 —— 1=3 'A Outlines ‘
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28min------»
din 6900
TT 46 N 12
TT60N
TT 93 N 08
DIN 46 244
TT105N
AD116s
TT95N
din 46247
4.8 DIN 46247
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DD 127 D
Abstract: dd 127 dd 127 d dd 22 s 800 eupec dd 82 DD 53 S 1200 K DD 127 EUPEC DD 31 800 EUPEC DD 53 s 1200 k
Text: EUPEC MTE D 34D35T? Fast diode modules Type V RRM If r m s m D D D D in Ifs m / i 2dt 10 ms, 10 ms, tv,= tv j m ax Wj m ax tv j max Ifa v m ^ V TO c SÔ7 • It = tv j max UPEC A A A2s A/°C tvj max K/W K/W °C R th J C 180 °el sin. -d i/d t 100 V R (hC K
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34D35T?
DD22S
DD 127 D
dd 127 dd 127 d
dd 22 s 800
eupec dd 82
DD 53 S 1200 K
DD 127
EUPEC DD 31 800
EUPEC DD 53 s 1200 k
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TD1501
Abstract: TD B6 HK 95 N pt118 t510s byv 25-1 T188F KFC7 bz plug TT 80 N 1200
Text: Outlines c ath o d e c ath o d e E-Cu-lead 25 mm E-Cu lead 25 silicon tu be red E-Cu-lead 0 5 m m ' silicon lead yellow I anode , anode - - case B T 72 h I 80 F. T 102 F, T 120 F, T 86 N, T 130 N, T 160 N, T 210 N case E 2 T 130 N, T 160 N K K ; i A ' -T-M
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1500/1X10
OT-93)
TD1501
TD B6 HK 95 N
pt118
t510s
byv 25-1
T188F
KFC7
bz plug
TT 80 N 1200
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dd 76 N powerblock
Abstract: No abstract text available
Text: Rectifier Diode Modules Type V rrm Ifr m sm V A Ifsm A 10 ms, VRSM = VRRM + 100 V Jpdt IfavM / T c A2s A/°C 10ms, T vjmaXi T vjm a x *103 28,8 V TO V T‘ V] =T1v) max rT m fi T„; RfhCK T v j m ax ° c /w °C /W °c o u tlin e 180° e! sin ^ v| rr a <
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MB86520
Abstract: No abstract text available
Text: June 1990 Edition 1.0 d a ta sh eet FUJITSU : MB86520 STEPPING MOTOR CONTROLLER STEPPING MOTOR CONTROLLER The Fujitsu MB86520, utilizing CMOS technology, is a universal controller for 4-phase stepping motor. It is intended to be used in conjunction with switching transistor e.g. Fujitsu FT 6000 series ,
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MB86520
MB86520,
D-6000
MB86520
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EUPEC tt 105 N 16
Abstract: EUPEC tt 93 n EUPEC DD 104 N 16 EUPEC DD 171 N 157000 EUPEC tt 61 n EUPEC DD 89 dd260
Text: EUPEC blE ]> • 3MD3ST7 0 0 0 1 3 3 e! 0S4 « U P E C Rectifier diode modules 'frmsm = V rrm If s m / i 2dt I favm ^ c V T D Tt R th JC o x: V rrm V rs m cl Type ■tv] m a x Outline + 100 V A V 10 ms, 10 ms, t»] = tv j = 180 “el ty j max tv j max f'.’j max
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DD85N
Abstract: dd 61 n 600 DD 90 N 1400 k dd260
Text: Rectifier diode modules Type Ifrmsm Vrrm V rsm Ifs m / i 2dt V TO R th C K Ivj max °c/w °C /W °c 1,2 0,2 150 It R th JC Wjmax tvj = t'j max sin. V m£2 38/ 83 31/100 0,8 7 Ifav m / ( c O utline = Vrrm + 100 V A V 10 ms. 10 ms, tvj max t, A A 2s tvj max
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EUPEC DD 104 N 16
Abstract: EUPEC DD 105 N 16 L EUPEC DD 31 800 EUPEC DD 600 eupec dd 76 n 1200 EUPEC DD 171 N EUPEC DD 89 DD 85 N 1600 EUPEC DD 105 N 16 157000
Text: Type V rrm V r sm 'frm sm = V r rm blE D EUPEC Rectifier diode modules If s m / i 2d t Ifa vm ^ c 34Q32T? V TD Tt R th JC GEH « U P E C R thC K •tvj m a x Outline + 100 V A V 10 ms, 10 ms, t vj = tv i = ty j m ax tv j max f'.’j max fv j max 180 “el
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34Q32T?
EUPEC DD 104 N 16
EUPEC DD 105 N 16 L
EUPEC DD 31 800
EUPEC DD 600
eupec dd 76 n 1200
EUPEC DD 171 N
EUPEC DD 89
DD 85 N 1600
EUPEC DD 105 N 16
157000
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24cxx eeprom tv file
Abstract: std dodos 721 AN5524 34163 PIC16C61/JW PIC16F84A PIC16C61 PIC16C62 PIC16C62A PIC16C63
Text: IM I i c PIC16C6X r o c h ip 8-Bit CMOS Microcontrollers Devices included in this data sheet: • • • • • • • • • • • Selectable oscillator options • Low-power, high-speed CMOS EPROM/ROM technology • Fully static design • W ide operating voltage range: 2.5V to 6.0V
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PIC16C6X
PIC16C61
PIC16C62
PIC16C62A
PIC16CR62
PIC16C63
PIC16C64
PIC16C64A
PIC16CR64
PIC16C65
24cxx eeprom tv file
std dodos 721
AN5524
34163
PIC16C61/JW
PIC16F84A
PIC16C61
PIC16C62
PIC16C62A
PIC16C63
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y APT6040SVR 600V 16A 0.400U ' POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance, Power MOS V™
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APT6040SVR
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APT6060BNR
Abstract: APT6070BNR ARJ6060B PT606 APT6070BN
Text: A d v a n ced P o w er Te c h n o l o g y O D O APT6060BNR APT6070BNR S POWER MOS IV® 600V 13.0A 0.60S2 600V 12.0A 0.70» AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT6060BNR
APT6070BNR
APT6060BNR
APT6070BNR
MIL-STD-750
O-247AD
0001S4S
ARJ6060B
PT606
APT6070BN
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Untitled
Abstract: No abstract text available
Text: OSS? -! 0 005 258 1Tb APT6015B2VR A dvanced P o w er Te c h n o lo g y P O W E R M O 600V 38A 0. 150Í 2 S V Power M O S V™ is a new generation of high voltage N-Channel enhancement mode power M O SFETs. This new technology minimizes the JF E T effect,
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APT6015B2VR
MIL-STD-750
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CAPACITOR 64 680 4J
Abstract: 567 tone BST72 Frequency Discriminator PCD3360P Z879 PCD3360 PCD3360T PCD3361P PCD3361T
Text: Signetics Linear Products Product Specification Programmable Multi-Tone Telephone Ringer PCD3360/61 G ENERA L DESCRIPTION The PCD3360/61 are CMOS integrated circuits, designed to replace the electro-mechanical bell in telephone sets. They meet most postal requirements, p a rticularly w ith tone sequence possibilities and
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PCD3360/61
PCD3360/61
PCD3360
BST72
CAPACITOR 64 680 4J
567 tone
Frequency Discriminator
PCD3360P
Z879
PCD3360T
PCD3361P
PCD3361T
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