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    5BS transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.


    OCR Scan     		BF908WR OT343R 0CH2274 RC281 DCH2275 OT343R. 5BS transistor PDF