ltp70n06
Abstract: No abstract text available
Text: LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control UPS RDS ON = 11.5 mΩ, Typ = 9 mΩ
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LTP70N06
ltp70n06
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mosfet 4800
Abstract: ltp70n06 4800 mosfet 4800 power mosfet mosfet 4800 circuit LTP70N
Text: LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control RDS ON = 14 mΩ, Typ = 10 mΩ UPS
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LTP70N06
mosfet 4800
ltp70n06
4800 mosfet
4800 power mosfet
mosfet 4800 circuit
LTP70N
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mosfet 4800
Abstract: 4800 mosfet ltp70n06 4800 power mosfet 4800 N-channel mosfet mosfet 4800 circuit 4800 power mosfet datasheet "Power MOSFET" S 170 MOSFET POWER MOSFET CIRCUIT
Text: LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control UPS RDS ON = 14 mΩ, Typ = 10 mΩ
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LTP70N06
300us,
mosfet 4800
4800 mosfet
ltp70n06
4800 power mosfet
4800 N-channel mosfet
mosfet 4800 circuit
4800 power mosfet datasheet
"Power MOSFET"
S 170 MOSFET
POWER MOSFET CIRCUIT
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LTP75N08
Abstract: ltp*75n08 LTP75N08P lsc 117
Text: LTP75N08P N-Channel 80V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 80 V, Switching DC-DC converter and DC motor control RDS ON = 9.5 mΩ, Typ = 8.5 mΩ
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LTP75N08P
LTP75N08
ltp*75n08
LTP75N08P
lsc 117
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LTP70N06P
Abstract: LTP*70n06p POWER MOSFET Rise Time N-CHANNEL 60V
Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control UPS RDS ON = 11.5 mΩ, Typ = 9 mΩ
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LTP70N06P
300us,
O-220
LTP70N06P
LTP*70n06p
POWER MOSFET Rise Time
N-CHANNEL 60V
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LTP*70n06p
Abstract: ltp70N06 LTP70N06P diode 60v 1a
Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control RDS ON = 11.5 mΩ, Typ = 9 mΩ UPS
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LTP70N06P
LTP*70n06p
ltp70N06
LTP70N06P
diode 60v 1a
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"Power MOSFET"
Abstract: power mosfet 20V n-Channel Power MOSFET Avalanche Rugged Technology N-channel Power MOSFET ISM mosfet n-channel mosfet transistor LTP90N08 POWER MOSFET CIRCUIT MOSFET dynamic parameters
Text: LTP90N08 N-Channel 80V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 80 V, Switching DC-DC converter and DC motor control UPS RDS ON = 9 mΩ, Typ = 6.5 mΩ
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LTP90N08
300us,
"Power MOSFET"
power mosfet
20V n-Channel Power MOSFET
Avalanche Rugged Technology
N-channel Power MOSFET
ISM mosfet
n-channel mosfet transistor
LTP90N08
POWER MOSFET CIRCUIT
MOSFET dynamic parameters
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LTP75N08
Abstract: ltp*75n08 POWER MOSFET 20V n-Channel Power MOSFET MOSFET 450 n-channel mosfet transistor MOSFET 450 channels N-CHANNEL POWER MOSFET POWER MOSFET CIRCUIT DC/DC motor forward reverse control
Text: LTP75N08 N-Channel 80V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 80 V, Switching DC-DC converter and DC motor control UPS RDS ON = 11 mΩ, Typ = 8.5 mΩ
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LTP75N08
300us,
LTP75N08
ltp*75n08
POWER MOSFET
20V n-Channel Power MOSFET
MOSFET 450
n-channel mosfet transistor
MOSFET 450 channels
N-CHANNEL POWER MOSFET
POWER MOSFET CIRCUIT
DC/DC motor forward reverse control
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LTP75N08P
Abstract: ltp*75n08 POWER MOSFET Rise Time LTP75N08 N-Channel, 30V, 4.0A, Power MOSFET mosfet nA idss
Text: LTP75N08P N-Channel 80V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 80 V, Switching DC-DC converter and DC motor control UPS RDS ON = 9.5 mΩ, Typ = 8.5 mΩ
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LTP75N08P
300us,
O-220
LTP75N08P
ltp*75n08
POWER MOSFET Rise Time
LTP75N08
N-Channel, 30V, 4.0A, Power MOSFET
mosfet nA idss
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LTP90N08
Abstract: No abstract text available
Text: LTP90N08 N-Channel 80V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 80 V, Switching DC-DC converter and DC motor control RDS ON = 9 mΩ, Typ = 6.5 mΩ UPS
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LTP90N08
LTP90N08
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LTP75N08
Abstract: ltp*75n08 LTP75N08P 1000 V N-channel mosfet 100A Mosfet
Text: LTP75N08P N-Channel 80V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 80 V, Switching DC-DC converter and DC motor control RDS ON = 9.5 mΩ, Typ = 8.5 mΩ
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LTP75N08P
LTP75N08
ltp*75n08
LTP75N08P
1000 V N-channel mosfet
100A Mosfet
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LTP50N06
Abstract: AIDM-150 mosfet motor dc 48v
Text: LTP50N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control RDS ON = 22mΩ, Typ = 18mΩ UPS ID = 50 A
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LTP50N06
LTP50N06
AIDM-150
mosfet motor dc 48v
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N2782A
Abstract: N2783A E2697A CNAC42Z 0S304 5989-6432EN
Text: N2780A Series AC/DC Current Probes A wide selection of current probes to meet your application's needs Data Sheet Hybrid technology for AC and DC measurements Using hybrid technology that includes a Hall-effect sensor and an AC current transformer, the probes provide accurate measurement of DC
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N2780A
N2780A)
N2783A)
N2779A
5989-6432EN
N2782A
N2783A
E2697A
CNAC42Z
0S304
5989-6432EN
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LQS66C101M04
Abstract: GPY0016C LQS66C470M04 LQS66C LQS66C221M04 1N5819 1N5819 general instruments
Text: GPY0016C Step-Up DC/DC Converter FEB. 13, 2006 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS However, GENERALPLUS TECHNOLOGY INC. makes no warranty for any errors which may
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GPY0016C
GPY0016C
SPY0016C
LQS66C101M04
LQS66C470M04
LQS66C
LQS66C221M04
1N5819
1N5819 general instruments
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CN017
Abstract: No abstract text available
Text: DC- AC INVERTER UNIT CXA-0368 8.0W DUAL OUTPUTS WITH DIMMING FUNCTION PRELIMINARY INFORMATION Applicable LCD: LTD104C11S (Toshiba Matsushita Display Technology) LTD121C30S (Toshiba Matsushita Display Technology) LTD121GA0S (Toshiba Matsuhita Display Technology)
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CXA-0368
LTD104C11S
LTD121C30S
LTD121GA0S
3930W3
CN01-6
CN02-7
CN01-7
CN01-8
CN017
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LVP640
Abstract: mosfet 100a 200v 200V power mosfet 200 A 200V mosfet 100a mosfet
Text: LVP640 N-Channel 200V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 200 V, DC-DC Converters UPS & Monitors RDS ON = 0.18Ω, Typ = 0.15Ω High Power Switching
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LVP640
LVP640
mosfet 100a 200v
200V power mosfet
200 A 200V mosfet
100a mosfet
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Untitled
Abstract: No abstract text available
Text: 100WFS series Single & Dual Output DC/DC Converter NEW Approved for New Designs www.martekpower.com FEATURES • • • • • • • SMT Technology 1000 VDC Input/Output Isolation High Efficiency Wide Operating Temperature Range Lead Frame Technology MTBF > 2,000,000 Hours
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100WFS
230oC
100WFS
100LFM
400LFM
200LFM
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Untitled
Abstract: No abstract text available
Text: S PY0016C SP S Sttep-Up DC/DC Converter Preliminary SEP. 20, 2001 Version 0.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.
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SPY0016C
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LVP630
Abstract: 200 A 200V mosfet mosfet 45a 200v mosfet 100a 200v n-channel 100v 100A
Text: LVP630 N-Channel 200V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 200 V, DC-DC Converters UPS & Monitors RDS ON = 0.40 Ω, Typ = 0.35 Ω High Power Switching
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LVP630
LVP630
200 A 200V mosfet
mosfet 45a 200v
mosfet 100a 200v
n-channel 100v 100A
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LVP640P
Abstract: LVP640 N_CHANNEL MOSFET 100V MOSFET mosfet 100a 200v
Text: LVP640P N-Channel 200V Power MOSFET Features: ‧ Avalanche Rugged Technology ‧ Rugged Gate Oxide Technology ‧ High di/dt Capability ‧ Improved Gate Charge Application ‧ DC-DC Converters ‧ UPS & Monitors ‧ High Power Switching ‧ Car Inventer
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LVP640P
LVP640P
LVP640
N_CHANNEL MOSFET 100V MOSFET
mosfet 100a 200v
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Untitled
Abstract: No abstract text available
Text: 100WFS series Single & Dual Output DC/DC Converter NEW Approved for New Designs www.martekpower.com FEATURES • • • • • • • SMT Technology 1000 VDC Input/Output Isolation High Efficiency Wide Operating Temperature Range Lead Frame Technology MTBF > 2,000,000 Hours
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100WFS
230oC
100WFS
100LFM
400LFM
200LFM
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Untitled
Abstract: No abstract text available
Text: 100WFS series Single & Dual Output DC/DC Converter NEW Approved for New Designs www.martekpower.com FEATURES • • • • • • • SMT Technology 1000 VDC Input/Output Isolation High Efficiency Wide Operating Temperature Range Lead Frame Technology MTBF > 2,000,000 Hours
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PDF
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100WFS
230oC
100WFS
100LFM
400LFM
200LFM
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Untitled
Abstract: No abstract text available
Text: 100WFS series Single & Dual Output DC/DC Converter NEW Approved for New Designs www.martekpower.com FEATURES • • • • • • • SMT Technology 1000 VDC Input/Output Isolation High Efficiency Wide Operating Temperature Range Lead Frame Technology MTBF > 2,000,000 Hours
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PDF
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100WFS
230oC
100WFS
100LFM
400LFM
200LFM
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Untitled
Abstract: No abstract text available
Text: 100WFS series Single & Dual Output DC/DC Converter NEW Approved for New Designs www.martekpower.com FEATURES • • • • • • • SMT Technology 1000 VDC Input/Output Isolation High Efficiency Wide Operating Temperature Range Lead Frame Technology MTBF > 2,000,000 Hours
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100WFS
230oC
100LFM
400LFM
200LFM
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