dc m7 footprint
Abstract: sma M7 diode sma M4 diode sma m7 marking of m7 diodes diode dc components m7 footprint M1-M7 Rectifier Diode diode m7 M7 diode footprint wave soldering M7 DO-214AC
Text: M1 – M7 WTE POWER SEMICONDUCTORS 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss A Built-in Strain Relief
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SMA/DO-214AC
MIL-STD-750,
dc m7 footprint
sma M7 diode
sma M4 diode
sma m7
marking of m7 diodes
diode dc components m7 footprint
M1-M7 Rectifier Diode
diode m7
M7 diode footprint wave soldering
M7 DO-214AC
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trs 3.5 mm audio jack
Abstract: TRS jack Neutrik NP3C RS-453 switched stereo jack MIL-P-642 60603-11 RS-453 60603-11 BP0316 BSP plugs torque XLR connector combo
Text: Plugs & Jacks 31 Content P a g e Plu Plugs: 1/4" Phone Plug - PX Series . 1/4" Phone Plug - Silent Plug . 1/4" Phone Plug - Crystal Plug . 1/4" Professional Phone Plugs - P Series .
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transformer ee28
Abstract: TOP259EN EE28 EE28 ferrite core power adapter for notebook schematic EE28 bobbin ISP817C ac power adapter for notebook schematic EE28 transformer TDK ee28
Text: DI-182 Design Idea TOPSwitch-HX Standard 65 W Notebook Adapter Which Meets Requirements for Energy Star 2.0 ES 2.0 Application Device Power Output Input Voltage Output Voltage Topology Notebook TOP259EN 65 W 90 – 265 VAC 19 V ±5% Flyback Design Highlights
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DI-182
OP259EN
O-220
IEC60068
DI-182
transformer ee28
TOP259EN
EE28
EE28 ferrite core
power adapter for notebook schematic
EE28 bobbin
ISP817C
ac power adapter for notebook schematic
EE28 transformer
TDK ee28
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equivalent transistor TT 3034
Abstract: TT 3034 NIBP sensor M3600 omron g2rs MTTF 20A600 G2R-2-S equivalent Velocity Sensors transistor tt 3034 MEMS blood pressure sensor
Text: Electronic Components Relays Electromechanical Relays Microelectronic Switches Connectors Sensors Fiber Optic 2 Omron Electronic Components LLC Stability and Experience With over 70 years experience, Omron continues to apply the latest technologies providing you with innovative efficient control component solutions. Our
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omron reed relay
Abstract: diode dc components m7 footprint passive Infrared-Sensor G3VM-601BY G3VM-61BR omron
Text: G3VM Series MOS FET Relays Omron Electronic Components: The Quality, Flexibility and Global Support You Need Electronic Components An Experienced Partner With over 70 years experience and 5.5 billion US dollars in sales, Omron is one of the world’s largest suppliers
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m6 marking transistor sot-23
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier
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2SA812
2SC1623.
200typ.
OT-23
BL/SSSTC010
m6 marking transistor sot-23
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Untitled
Abstract: No abstract text available
Text: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.
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LX5510
45GHz
19dBm
125mA
19dBm
64QAM
54Mbps
LX5510
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m6 marking transistor sot-23
Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier
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2SA812
2SC1623.
200typ.
OT-23
BL/SSSTC010
m6 marking transistor sot-23
sot-23 Marking M6
2SA812
Package M5 SOT23 transistor
transistor SOT23 m6
M6 SOT23
m5 marking transistor sot-23
dc m7 footprint
m6 sot package sot-23
2SC1623
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Untitled
Abstract: No abstract text available
Text: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.
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LX5510
45GHz
19dBm
125mA
19dBm
64QAM
54Mbps
LX5510
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Untitled
Abstract: No abstract text available
Text: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.
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LX5510
45GHz
19dBm
125mA
19dBm
64QAM
54Mbps
LX5510
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ICS84329 Integrated Circuit Systems, Inc. 700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84329 is a general purpose, single output high frequency synthesizer and a member of HiPerClockS
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ICS84329
700MHZ,
ICS84329
200MHz
700MHz.
84329AV
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ICS84329-01 Integrated Circuit Systems, Inc. 700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84329-01 is a general purpose, single output high frequency synthesizer and a memHiPerClockS
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ICS84329-01
700MHZ,
25MHz
700MHz
200MHz
SY89429
ICS84329-01
84329AM-01
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ICS84329 Integrated Circuit Systems, Inc. 700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84329 is a general purpose, single output high frequency synthesizer and a member of HiPerClockS
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ICS84329
700MHZ,
25MHz
700MHz
200MHz
700MHz
MC12429
ICS84329
84329AV
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ICS84329-01 Integrated Circuit Systems, Inc. 700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84329-01 is a general purpose, single output high frequency synthesizer and a memHiPerClockS
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ICS84329-01
700MHZ,
ICS84329-01
200MHz
700MHz.
84329AM-01
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LX5510-LQT
Abstract: diode dc components m7 footprint LX5510 LX5510-LQ bipolar transistor 2.4 ghz s-parameter
Text: C O N F I D E N T I A L LX5510 I N T E G R A T E D P R O D U C T S InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of
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LX5510
19dBm
64QAM,
54Mbps)
120mA
23dBm.
LX5510
16-pin
11b/g
LX5510-LQT
diode dc components m7 footprint
LX5510-LQ
bipolar transistor 2.4 ghz s-parameter
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS84329B-01 700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84329B-01 is a general purpose, single output high frequency synthesizer and a member
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ICS84329B-01
700MHZ,
25MHz
700MHz
200MHz
SY89429
ICS84329B-01
84329BM-01
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Untitled
Abstract: No abstract text available
Text: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias. With increased bias of 5 V EVM is ~
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LX5510
19dBm
64QAM,
54Mbps)
LX5510
16-pin
11b/g
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SPP-010
Abstract: No abstract text available
Text: PD - 94089 Provisional Data Sheet iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features • 15A continuous output current at 1MHz switching • Very small 11mm x 11mm x 3mm footprint • 5 to 12V input
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iP2001
iP2001
SPP-010.
SPP-010
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Untitled
Abstract: No abstract text available
Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin
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LX5512E
45GHz
19dBm
130mA
19dBm
64QAM
54Mbps
LX5512E
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Untitled
Abstract: No abstract text available
Text: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.
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LX5510
45GHz
19dBm
125mA
19dBm
64QAM
54Mbps
LX5510
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LX5510
Abstract: LX5510CLQ LX5510CLQT M730
Text: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.
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LX5510
19dBm
64QAM,
54Mbps)
LX5510
16-pin
11b/g
LX5510CLQ
LX5510CLQT
M730
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LX5510
Abstract: LX5510LQ-TR LX5510LQ MLPQ 40
Text: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.
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LX5510
19dBm
64QAM,
54Mbps)
LX5510
16-pin
11b/g
LX5510LQ-TR
LX5510LQ
MLPQ 40
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Untitled
Abstract: No abstract text available
Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin
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LX5512E
19dBm
64QAM,
54Mbps)
LX5512E
16-pin
11b/g
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PDF
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Untitled
Abstract: No abstract text available
Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin
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LX5512E
45GHz
19dBm
130mA
19dBm
64QAM
54Mbps
LX5512E
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