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    DC 3V RELAY 0.5A 220V AC Search Results

    DC 3V RELAY 0.5A 220V AC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd

    DC 3V RELAY 0.5A 220V AC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OMRON G2V-2 12V relay

    Abstract: spdt 6v 1a relay 5V SPDT relay relay 12V, 70A OMRON G2V-2 6V relay dry contact relay 220V SRD 12VDC SL C MATSUA compressor codes 12V 30A PCB RELAY spdt relays 12v
    Text: Relays New products … from the following brands: Automotive Relays PCB Relay Sockets PCB Relays Photomos Relays Plug-in Power Relays Reed Relays Solid State Relays Surface Mount 693 693 674 671 695 670 698 671 24 Top sellers High Sensitivity Relay SPDT 1A


    Original     		PDF 100mA OMRON G2V-2 12V relay spdt 6v 1a relay 5V SPDT relay relay 12V, 70A OMRON G2V-2 6V relay dry contact relay 220V SRD 12VDC SL C MATSUA compressor codes 12V 30A PCB RELAY spdt relays 12v

    catalogue

    Abstract: jigo products SCR 131- 6 WJ 59 SCR 131- 6 WJ 69 SCR 131- 6 WJ 68 SCR 131- 6 WJ 60 LC1-D32 SCR 131- 6 WJ 67 SCR 131- 6 WJ 65 ST3PA
    Text: JiGO PRODUCTS CATALOGUE it all began in 1987…. The founder hit upon the electrical business in 1987 in the financial hub of eastern India, Kolkata. In midst of severe competition and tough markets, their values and committment towards quality and customer service set them apart from


    Original     		PDF JG-GV3-M06 JG-GV3-M07 JG-GV3-M08 JG-GV3-M10 JG-GV3-M14 JG-GV3-M20 JG-GV3-M25 JG-GV3-M40 JG-GV3-M63 JG-GV3-M80 catalogue jigo products SCR 131- 6 WJ 59 SCR 131- 6 WJ 69 SCR 131- 6 WJ 68 SCR 131- 6 WJ 60 LC1-D32 SCR 131- 6 WJ 67 SCR 131- 6 WJ 65 ST3PA

    mje13003 equivalent

    Abstract: MJE13003l MJE13003-x-TM3-T MJE13003 npn transistors 700V 1A switching transistor OF transistor 2N2222 to-92 2N2222 - to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L MJE13003-x-T60-K MJE13003L-x-T60-K QW-R204-004 mje13003 equivalent MJE13003l MJE13003-x-TM3-T MJE13003 npn transistors 700V 1A switching transistor OF transistor 2N2222 to-92 2N2222 - to-92

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    mje13003 equivalent

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 QW-R201-062 mje13003 equivalent

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-126 QW-R204-004

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns O-126 MJE13003L QW-R204-004

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 QW-R201-062

    MJE13003 TO-92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns MJE13003L QW-R201-062 MJE13003 TO-92

    MJE13003K

    Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003K 290ns MJE13003KL-x-x-T60-K MJE13003KG-x-x-T60-K MJE13003KL-x-x-T6C-A-K MJE13003KG-x-x-Tues QW-R223-006 MJE13003K Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V

    mje13003

    Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-126 QW-R204-004 mje13003 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-220 QW-R203-017

    MJE13003 transistor

    Abstract: equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns O-126 MJE13003L MJE13003-x-T60-F-Kt QW-R204-004 MJE13003 transistor equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 QW-R201-062

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-220 QW-R203-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13002-E MJE13002-E MJE13002L-E-x-T6S-K MJE13002G-E-x-T6S-K QW-R204-032

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009

    2N2222 transistor output curve

    Abstract: UTCMJE13003 MJE13003 transistor
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-220 QW-R203-017 2N2222 transistor output curve UTCMJE13003 MJE13003 transistor

    MJE13003

    Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 O-220 290ns MJE13003L MJE13003-x-TA3-F-T QW-R203-017 MJE13003 MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222

    mje13003 equivalent

    Abstract: MJE13003 MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 TO-126 DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 O-126 290ns O-252 O-220 MJE13003L QW-R204-004 mje13003 equivalent MJE13003 MJE13003 TO-92

    equivalent mje13003

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns O-252 MJE13003L O-252 MJE13003-x-Tues QW-R209-022 equivalent mje13003

    28V DC supply ring generator

    Abstract: L7581AAE 220v 2a diode bridge ISL5571A ISL5571AIB ISL5571AIBZ TB363 TB379 TISPL758LF3D
    Text: ISL5571A Data Sheet July 2004 FN4920.5 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.


    Original     		PDF ISL5571A FN4920 ISL5571A L7581AAE CPCL7581A 110mA. 28V DC supply ring generator 220v 2a diode bridge ISL5571AIB ISL5571AIBZ TB363 TB379 TISPL758LF3D

    220v 2a diode bridge

    Abstract: L7581AAE 28V DC supply ring generator ISL5571A ISL5571AIB TB363 TB379 TISPL758LF3D transistor scr voltage drop circuit from 220V to 10V
    Text: ISL5571A Data Sheet June 2002 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.


    Original     		PDF ISL5571A ISL5571A FN4920 L7581AAE CPCL7581A 110mA. 220v 2a diode bridge 28V DC supply ring generator ISL5571AIB TB363 TB379 TISPL758LF3D transistor scr voltage drop circuit from 220V to 10V