laser diode lifetime
Abstract: diode laser bragg TEM00 Thermistor 200 dbr laser
Text: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION BAL DFB/DBR Laser EYP-DBR-1080-00020-2000-BFY02-0000 General Product Information
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EYP-DBR-1080-00020-2000-BFY02-0000
laser diode lifetime
diode laser bragg
TEM00
Thermistor 200
dbr laser
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GaAs diode nm
Abstract: TEM00
Text: 0.90 24.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1063-00100-2000-SOT02-0000 General Product Information Product
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EYP-DBR-1063-00100-2000-SOT02-0000
GaAs diode nm
TEM00
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6392
Abstract: TEM00
Text: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1080-00080-2000-SOT02-0000 General Product Information
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EYP-DBR-1080-00080-2000-SOT02-0000
6392
TEM00
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diode laser bragg
Abstract: GaAs diode nm TEM00
Text: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1080-00080-2000-TOC03-0000 General Product Information
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EYP-DBR-1080-00080-2000-TOC03-0000
diode laser bragg
GaAs diode nm
TEM00
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TEM00
Abstract: dbr laser
Text: 0.90 24.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1063-00100-2000-TO-03-0000 General Product Information
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EYP-DBR-1063-00100-2000-TO-03-0000
TEM00
dbr laser
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TEM00
Abstract: DFB TO
Text: 0.90 14.12.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0976-00150-1500-SOT02-0000 General Product Information Product
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EYP-DFB-0976-00150-1500-SOT02-0000
TEM00
DFB TO
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TEM00
Abstract: laser diode pinout
Text: 0.90 03.12.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0780-00080-1500-SOT02-0000 General Product Information Product
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EYP-DFB-0780-00080-1500-SOT02-0000
TEM00
laser diode pinout
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TEM00
Abstract: DFB TO can
Text: 0.91 16.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0763-00050-1500-SOT02-0000 General Product Information Product
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EYP-DFB-0763-00050-1500-SOT02-0000
TEM00
DFB TO can
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1060 nm GaAs Laser Diode
Abstract: GaAs diode nm TEM00
Text: 0.91 31.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-1060-00150-1500-SOT02-0000 General Product Information Product
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EYP-DFB-1060-00150-1500-SOT02-0000
1060 nm GaAs Laser Diode
GaAs diode nm
TEM00
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GaAs diode nm
Abstract: TEM00
Text: 0.90 14.12.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0976-00150-1500-TOC03-0000 General Product Information Product
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GaAs diode nm
TEM00
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TEM00
Abstract: No abstract text available
Text: 0.90 14.12.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0937-00100-1500-TOC03-0000 General Product Information Product
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EYP-DFB-0937-00100-1500-TOC03-0000
TEM00
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laser diode 760
Abstract: TEM00 DFB TO
Text: 0.90 03.12.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0760-00040-1500-SOT02-0000 General Product Information Product
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laser diode 760
TEM00
DFB TO
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TEM00
Abstract: DFB TO can
Text: 0.90 23.11.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0773-00075-1500-SOT02-0000 General Product Information Product
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EYP-DFB-0773-00075-1500-SOT02-0000
TEM00
DFB TO can
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laser diode lifetime
Abstract: TEM00 laser DFB
Text: 0.90 3.12.107 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0773-00075-1500-TOC03-0000 General Product Information Product
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EYP-DFB-0773-00075-1500-TOC03-0000
laser diode lifetime
TEM00
laser DFB
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1060 nm GaAs Laser Diode
Abstract: 1060 nm semiconductor laser injection laser diode
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-1060-00500-3006-CMT03-0000 General Product Information Product Application 1060 nm Tapered Amplifier
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EYP-TPA-1060-00500-3006-CMT03-0000
1060 nm GaAs Laser Diode
1060 nm
semiconductor laser
injection laser diode
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Laser Diode 808 nm
Abstract: semiconductor laser EYP-TPL-0808-01000-3006-CMT03-0000
Text: Version 0.90 24.01.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED LASER GaAs Semiconductor Laser Diode RWE/RWL BAL PRELIMINARY SPECIFICATION Tapered Laser EYP-TPL-0808-01000-3006-CMT03-0000 General Product Information Product Application 808 nm Tapered Laser
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EYP-TPL-0808-01000-3006-CMT03-0000
Laser Diode 808 nm
semiconductor laser
EYP-TPL-0808-01000-3006-CMT03-0000
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EYP-TPA-0795
Abstract: EYP-TPA-0795-00500-3006-CMT03-0000 0795 795nm laser diode lifetime
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0795-00500-3006-CMT03-0000 General Product Information Product Application 795 nm Tapered Amplifier
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EYP-TPA-0795
EYP-TPA-0795-00500-3006-CMT03-0000
0795
795nm
laser diode lifetime
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"Laser Measurement"
Abstract: No abstract text available
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0765-01500-3006-CMT03-0000 General Product Information Product Application 765 nm Tapered Amplifier
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"Laser Measurement"
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Untitled
Abstract: No abstract text available
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0915-01500-3006-CMT03-0000 General Product Information Product Application 915 nm Tapered Amplifier
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EYP-RWE-0790-04000-0750-SOT01-0000
Abstract: laser diode pinout laser 790 nm
Text: Version 0.90 28.12.2007 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0790-04000-0750-SOT01-0000
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EYP-RWE-0790-04000-0750-SOT01-0000
EYP-RWE-0790-04000-0750-SOT01-0000
laser diode pinout
laser 790 nm
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EYP-RWE-0840-06010-1500-SOT02-0000
Abstract: 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0840-06010-1500-SOT02-0000
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EYP-RWE-0840-06010-1500-SOT02-0000
EYP-RWE-0840-06010-1500-SOT02-0000
780 laser diode
tunable laser diode
840 nm GaAs
0/840 nm GaAs
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TEM00
Abstract: NTC Thermistor 8 kOhm
Text: Version 0.90 09.06.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0773-00020-1500-BFY02-0000 General Product Information
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EYP-DFB-0773-00020-1500-BFY02-0000
TEM00
NTC Thermistor 8 kOhm
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GaAs diode nm
Abstract: TEM00 1060 nm GaAs Laser Diode
Text: Version 0.91 31.01.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-1060-00150-1500-TOC03-0000 General Product Information
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GaAs diode nm
TEM00
1060 nm GaAs Laser Diode
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Untitled
Abstract: No abstract text available
Text: Advanced Product Information LD5000 DBR Series TUNABLE LASER DIODES DBR These lasers offer direct modulation capability, and fast electronic wavelength tuning in a single reliable device operating at 1550nm Features • High speed, direct modulation of laser output
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OCR Scan
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LD5000
1550nm
665/SM/10900
665/SM/10904/000
37bflS01
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