DB 22 AR TRANSISTOR SMD Search Results

DB 22 AR TRANSISTOR SMD Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

DB 22 AR TRANSISTOR SMD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111	PDF
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA	PDF
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113	PDF
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104	PDF
transistor 2xw Abstract: transistor table RF Bipolar Transistor smd rf transistor marking Text: T ar ge t D at a S he et , R e v . 1. 1 , D ec e m be r 2 00 8 BGB707L7ESD T ar ge t D at a S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2008-12-10 Published by Infineon Technologies AG,	Original	BGB707L7ESD transistor 2xw transistor table RF Bipolar Transistor smd rf transistor marking	PDF
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103	PDF
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X	PDF
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw	PDF
C801 Abstract: 1/db3 c801 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801	PDF
TLE4284DV Abstract: TLE4284DV50 Text: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V	Original	P-TO252-3-1 P-TO252-3-1, P-TO2523-11 TLE4284DV TLE4284DV50	PDF
TLE4284DV15 Abstract: P-TO252 TLE4284DV TLE4284DV50 TO252 rthjc DV18 P-TO252-3-11 TLE4284 Q67006-A9691 SMD NF Text: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V	Original	P-TO252-3-1 P-TO252-3-1, P-TO252-3-11 TLE4284DV15 P-TO252 TLE4284DV TLE4284DV50 TO252 rthjc DV18 TLE4284 Q67006-A9691 SMD NF	PDF
Untitled Abstract: No abstract text available Text: Voltage Regulator TLE 4284 Features • • • • • • voltage regulator with Adjustable, 1.5V, 1.8V, 2.6V, 3.3 V, 5.0V output voltage 1.0 A output current Low drop voltage, typ. 1 V Short circuit protected Overtemperature protected Wide operating range up to 40 V	Original	P-TO252-3-1 P-TO252-3-1, P-TO2523-11	PDF
LM7805 Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original	PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND	PDF

SMD r801 Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,	Original	PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223	PDF
c102 TRANSISTOR Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217	PDF
c102 TRANSISTOR Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111	PDF
PEB22521 Abstract: AR20 BA22 BA23 z73 trigger transformer k3210 Text: D ata S he et, D S7 , A pr il 20 00 ANIC A n a lo g N e t w o r k I n te r fa c e C ir c u it PSB 4450 Version 1.2 PSB 4451 Version 1.2 Transceivers N e v e r s t o p t h i n k i n g . Edition 2000.04.07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,	Original	D-81541 PEB22521 AR20 BA22 BA23 z73 trigger transformer k3210	PDF
RJ45 datasheet 8P8C Abstract: IBM simm 30-pin smd LD9 smd transistor ld3 motorola 30-pin simm memory dynamic 74ACT14D 74ACT74D AMD PCMCIA Flash Memory Card PC MOTHERBOARD CIRCUIT diagram of LG computers LED SMD 1206 INFRA RED Text: Freescale Semiconductor, Inc. MOTOROLA Motorola Semiconductor Israel Ltd. MICROPROCESSOR & MEMORY Freescale Semiconductor, Inc. CT OR , IN C.2 006 TECHNOLOGIES GROUP MIC ON DU MPC860ADS User’s Manual AR CH IVE DB YF RE ES CA LE SE Board Revision - ENG	Original	MPC860ADS MPC860ADS, RJ45 datasheet 8P8C IBM simm 30-pin smd LD9 smd transistor ld3 motorola 30-pin simm memory dynamic 74ACT14D 74ACT74D AMD PCMCIA Flash Memory Card PC MOTHERBOARD CIRCUIT diagram of LG computers LED SMD 1206 INFRA RED	PDF
PTF080901A Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original		PDF
fr53 Abstract: FR52 LX41 ic ntp- 3000 Z31 SMD Innovative Processing AG PSB 4450 datasheet BA23 PEB22521 P-TSSOP-28-1 Text: D at a She et , DS8 , Sep te mb er 20 00 ANIC A n a lo g N e t w o r k I n te r fa c e C ir c u it PSB 4450 Version 1.2 PSB 4451 Version 1.2 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000.09.04 Published by Infineon Technologies AG,	Original	D-81541 fr53 FR52 LX41 ic ntp- 3000 Z31 SMD Innovative Processing AG PSB 4450 datasheet BA23 PEB22521 P-TSSOP-28-1	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF
DB 22 AR transistor smd Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and	OCR Scan	MRF6401 MRF6401PHT/D IS21I IS12I DB 22 AR transistor smd	PDF
lm 9805 Abstract: LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733 Text: DISC RETE S E M IC O N D U C TO R S A SlnlEET BLV2047 UHF power transistor 1998 Mar 10 Product specification Supersedes data of 1998 Jan 28 File under Discrete Semiconductors, SC08b Philips Semiconductors PHILIPS PHILIPS Phi l i ps S e m i c o n d u c t o r s	OCR Scan	BLV2047 SC08b OT468A 125108/00/04/pp12 lm 9805 LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733	PDF

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DB 22 AR TRANSISTOR SMD Search Results

DB 22 AR TRANSISTOR SMD Result Highlights (5)

DB 22 AR TRANSISTOR SMD Datasheets Context Search

TL113

capacitor marking c106

c102 TRANSISTOR

c102 TRANSISTOR

TRANSISTOR C802

transistor 2xw

transistor c735

TL225

TRANSISTOR C802

C801

TLE4284DV

TLE4284DV15

Untitled

LM7805

SMD r801

c102 TRANSISTOR

c102 TRANSISTOR

PEB22521

RJ45 datasheet 8P8C

PTF080901A

fr53

SMD M05 sot23

DB 22 AR transistor smd

lm 9805