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    DATE SHEET FOR 8A 2011 Search Results

    DATE SHEET FOR 8A 2011 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    DATE SHEET FOR 8A 2011 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: For Reference Date of Issue: March 17, 2011 OMRON Corporation OMRON RELAY&DEVICES Corporation SPECIFICATIONS This specification sheet is for reference only, Please request it again if a specification for receipt is necessary. Handled by Distribution Customer


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    Untitled

    Abstract: No abstract text available
    Text: For Reference Date of Issue: March 17, 2011 OMRON Corporation OMRON RELAY&DEVICES Corporation SPECIFICATIONS This specification sheet is for reference only, Please request it again if a specification for receipt is necessary. Handled by Distribution Customer


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    Untitled

    Abstract: No abstract text available
    Text: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRP860 175oC

    TA49059

    Abstract: rhrp TA4905
    Text: RHRP860_F085 Data Sheet September 2011 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRP860 TA49059. TA49059 rhrp TA4905

    8 pins 4 mosfet

    Abstract: SLUP100
    Text: CSD87331Q3D SLPS283 – SEPTEMBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high


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    PDF CSD87331Q3D SLPS283 CSD87331Q3D 8 pins 4 mosfet SLUP100

    Untitled

    Abstract: No abstract text available
    Text: OLED SPECIFICATION Model No: EA W20016-XALG MODLE NO︓EA W20016-XALG RECORDS OF REVISION VERSION DATE 2011.11.18 DOC. FIRST ISSUE REVISED SUMMARY PAGE NO. First issue 2. General Specification Item Number of Characters Module dimension View area Active area


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    PDF W20016-XALG

    Untitled

    Abstract: No abstract text available
    Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high


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    PDF CSD87331Q3D SLPS283A CSD87331Q3D

    MAX14980

    Abstract: 63TC
    Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high


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    PDF CSD87331Q3D SLPS283A CSD87331Q3D MAX14980 63TC

    Untitled

    Abstract: No abstract text available
    Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high


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    PDF CSD87331Q3D SLPS283A CSD87331Q3D

    Untitled

    Abstract: No abstract text available
    Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high


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    PDF CSD87331Q3D SLPS283A CSD87331Q3D

    CSD87331Q3D

    Abstract: No abstract text available
    Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high


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    PDF CSD87331Q3D SLPS283A CSD87331Q3D

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPW60R230P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6 1Description TO-247


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    PDF IPW60R230P6 O-247

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R230P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6,IPP60R230P6,IPA60R230P6 1Description


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    PDF IPx60R230P6 IPW60R230P6, IPP60R230P6, IPA60R230P6 O-247 O-220

    5V 5A voltage regulator

    Abstract: No abstract text available
    Text: 19-6009; Rev 0; 8/11 MAX15108 Evaluation Kit Evaluates: MAX15108 General Description The MAX15108 evaluation kit EV kit provides a proven design to evaluate the MAX15108 high-efficiency, 8A, step-down regulator with integrated switches in a 20-bump wafer-level package (WLP). The EV kit is preset for 1.5V


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    PDF MAX15108 MAX15108 20-bump 5V 5A voltage regulator

    2100a epoxy

    Abstract: RF1601T2D RF1601
    Text: RF1601T2D Data Sheet Fast recovery diodes RF1601T2D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F


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    PDF RF1601T2D O-220) O220FN 60Hz/1cyc) 200pF 100pF R1120A 2100a epoxy RF1601T2D RF1601

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Fast recovery diodes RF1601T2D Applications General rectification Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss (1) (2) (3) Construction Silicon epitaxial planar


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    PDF RF1601T2D O-220) O220FN 60Hz/1cyc) 200pF 100pF R1120A

    Untitled

    Abstract: No abstract text available
    Text: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout


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    PDF LMZ12008 SNVS716E LMZ12008 350kHz) LMZ22010/08/06, LMZ12010/06, LMZ23610/08/06

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1743A LTM4613 8A, High Voltage Power µModule Regulator Description Demonstration circuit DC1743A features the LTM 4613EV, an EN55022 class B certified, high input and output voltage, high efficiency, switch mode step-down power µModule® regulator. The input voltage range is from 5V to 36V. The


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    PDF DC1743A LTM4613 DC1743A 4613EV, EN55022 LTM4613 dc1743af

    Untitled

    Abstract: No abstract text available
    Text: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout


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    PDF LMZ12008 SNVS716E LMZ12008 350kHz) LMZ22010/08/06, LMZ12010/06, LMZ23610/08/06, LMZ13610/08/06

    SNVA425

    Abstract: No abstract text available
    Text: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout


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    PDF LMZ12008 SNVS716E LMZ12008 350kHz) LMZ22010/08/06, LMZ12010/06, LMZ23610/08/06, LMZ13610/08/06 SNVA425

    Untitled

    Abstract: No abstract text available
    Text: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


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    PDF IGC11T120T8L L7613V, L7613P,

    Untitled

    Abstract: No abstract text available
    Text: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


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    PDF IGC11T120T8L L7613V, L7613P,

    Untitled

    Abstract: No abstract text available
    Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA0014U10000000 Version


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    PDF MA0014U10000000 D020210 MA0014U100000000 O-251 80pcs 4000pcs

    Untitled

    Abstract: No abstract text available
    Text: ÏB H S - 5 4 C 1 3 8 R H Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer Septem ber 1995 Features Pinouts • Radiation Hardened EPI-CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW - Total Dose 1 x 10s RAD(Si)


    OCR Scan
    PDF MIL-STD-1835 CDIP2-T16 SA2995 80C85RH HS-54C138RH