Untitled
Abstract: No abstract text available
Text: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage
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4148SE
4148CC
MMBD4148CA
MMBD4148
MMBD4148CC
MMBD4148SE
OT-23
4148CA
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4148CA
Abstract: 4148SE MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE
Text: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage
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4148SE
4148CC
MMBD4148CA
MMBD4148
MMBD4148CC
MMBD4148SE
OT-23
4148CA
4148CA
4148SE
MMBD4148
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG Lic e n se d b y O N Se m ic o nd uc to r, A tra d e m a rk o f se m ic o nd uc to r C o m p o n e n ts In d u strie s, LLC f o r Ze ne r Te c hno lo g y a n d Pro d uc ts. 5 0 0 m W D O- 3 5 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge
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79Cxxx
BZX79Cxxets.
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Untitled
Abstract: No abstract text available
Text: Non-promotional not for new designs FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series n FEATURES UL, CSA, SEV recognized Contact rating types - Low level to 10 amps switching l Standard and high sensitivity types available l High surge strength version available
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1/3/5/10A
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Untitled
Abstract: No abstract text available
Text: Li cen sed b y O N Se m i co n d u ct o r , A t r adem ar k of se m icon d u ct or Co m p o n e n t s I n du st r ies, LLC for Z e n e r Te ch n olog y and Pr od u ct s. TAK CHEONG 1 .3 W a t t D O- 4 1 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge
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85Cxxx
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IRG4BC20U
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC20U
O-220AB
O-220Ai
IRG4BC20U
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IRGPF50F
Abstract: al c269
Text: Previous Datasheet Index Next Data Sheet PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPF50F
10kHz)
O-247AC
C-272
IRGPF50F
al c269
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IRLIZ34N
Abstract: MOSFET IRF 630
Text: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRLIZ34N
IRLIZ34N
MOSFET IRF 630
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zener diode, zl 33
Abstract: 20v surface mount zener
Text: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Units 200 mW TSTG Storage Temperature Range -65 to +150 °C TOPR Operating Temperature Range
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200mW
OD-323
zener diode, zl 33
20v surface mount zener
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ice2a765p
Abstract: ice2b765p coolsettm-f2 P-TO220-6-3 Q67040-S4532
Text: D CoolSET -F 2 at a Datash eet, V ersion 2 .0 , A ugust 2001 ICE2A765P ar y ICE2B765P re li m in Off-Line SMPS Current Mode C o n t ro l l e r w i t h i n t e g ra t e d 6 5 0 V CoolMOS™ P P o w e r M a n a g em e n t & S u p p l y N e v e r s t o p t h i n k i n g .
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ICE2A765P
ICE2B765P
ICE2A765P
ice2b765p
coolsettm-f2
P-TO220-6-3
Q67040-S4532
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sod-323 Marking ZD
Abstract: No abstract text available
Text: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Units 200 mW TSTG Storage Temperature Range -65 to +150 °C TOPR Operating Temperature Range
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200mW
OD-323
sod-323 Marking ZD
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GAL22V10D-25QP equivalent
Abstract: GAL22V10D-15QJN GAL22V10D GAL22V10D-15LPN gal22v10d25lpn GAL22V10D 15qjn GAL22V10D-10QPN GAL22V10D-15LPNI GAL22V10D-10LPI GAL22V10D15LPI
Text: GAL 22V10 Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.
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22V10
GAL22V10D-7LP
GAL22V10D-7LPN
GAL22V10D-10LP
GAL22V10D-10LPN
GAL22V10D-15LP
GAL22V10D-15LPN
GAL22V10D-25LP
GAL22V10D-25LPN
GAL22V10D-7LPI
GAL22V10D-25QP equivalent
GAL22V10D-15QJN
GAL22V10D
gal22v10d25lpn
GAL22V10D 15qjn
GAL22V10D-10QPN
GAL22V10D-15LPNI
GAL22V10D-10LPI
GAL22V10D15LPI
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG Lic e n se d b y O N Se m ic o nd uc to r, A tra d e m a rk o f se m ic o nd uc to r C o m p o n e n ts In d u strie s, LLC f o r Ze ne r Te c hno lo g y a n d Pro d uc ts. 5 0 0 m W D O- 3 5 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge
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52xxB
1N52xxB
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IRG4BC30UD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4BC30UD
O-220AB
IRG4BC30UD
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1838t
Abstract: 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n
Text: Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH50MD2
10kHz)
O-247AC
C-488
1838t
1838 T
D-10
IRGPH50MD2
C-483
C483
SE 135 N
se 130 n
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irl3803 equivalent
Abstract: 71A marking IRL3803 IRLI3803 irf 680 MOSFET 150 N IRF
Text: Previous Datasheet Index Next Data Sheet PD - 9.1320A IRLI3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
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IRLI3803
irl3803 equivalent
71A marking
IRL3803
IRLI3803
irf 680
MOSFET 150 N IRF
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GAL16V8D-15LS equivalent
Abstract: GAL16V8D15LJ GAL16V8D-25LJN GAL16V8D-25LJ GAL16V8D15LPI AC021 gal16v8 GAL16V8D-25QPN GAL16V8D-15LP
Text: GAL 16V8 Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status.
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GAL16V8C
GAL16V8C-5LP
GAL16V8C-7LP
GAL16V8D-7LP
GAL16V8D-7LPN
GAL16V8D-10LP
GAL16V8D-10LPN
GAL16V8D-15LP
GAL16V8D-15LPN
GAL16V8D-25LP
GAL16V8D-15LS equivalent
GAL16V8D15LJ
GAL16V8D-25LJN
GAL16V8D-25LJ
GAL16V8D15LPI
AC021
gal16v8
GAL16V8D-25QPN
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ICE2AS01 equivalent
Abstract: ICE2AS01 CoolMOS Power Transistor E2AS01 ICE2AS01G ICE2AS01 power 65VP
Text: at a Da ta sheet, Version 2.1, F ebruary 2001 D ICE2AS01 re li m in ar y Off-Line SMPS Current Mode Controller P P o w e r M a n a g em e n t & S u p p l y N e v e r s t o p t h i n k i n g . ICE2AS01 Revision History: 2001-02-28 Previous Version: First One
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ICE2AS01
ICE2AS01 equivalent
ICE2AS01
CoolMOS Power Transistor
E2AS01
ICE2AS01G
ICE2AS01 power
65VP
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IRG4PC30UD
Abstract: 6000uf igbt 600V
Text: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC30UD
O-247AC
IRG4PC30UD
6000uf
igbt 600V
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T6718
Abstract: No abstract text available
Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 Cl I -I C- I I C2 L I. c2 L I- - 1—1 Bi —I—I NPN I - I Ei — LI ZO B2 E2 pnp PARTMARKING DETAIL - T6718 ABSOLUTE MAXIMUM RATINGS.
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ZDT6718
T6718
-100m
FMMT718
T6718
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2757T, ¿¿PC2758T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR MOBILE COMMUNICATIONS DESCRIPTION T he ^¡PC 2757T and ^¡PC 2758T are silicon m o n o lith ic in te g ra te d circu its d e sig n e d as 1st d o w n -co n ve rte rs fo r L
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uPC2757T
PC2758T
2757T
2758T
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Untitled
Abstract: No abstract text available
Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD439 Rating VcBO BD441 Collector Emitter Voltage
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BD439/441
BD440,
BD442
BD439
BD441
BD441
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irfp45
Abstract: No abstract text available
Text: IRFP450 Advanced Power MOSFET FEATURES BV dss = 500 V ♦ A va la n ch e Rugged T e ch n o lo g y ♦ ^D S o n = Rugged G ate O xide T e ch n o lo g y ♦ Low er Input C apa citance ♦ lD = 0 .4 Q 14 A Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a
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IRFP450
irfp45
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Untitled
Abstract: No abstract text available
Text: IRFP450A Advanced Power MOSFET FEATURES BV dss = 500 V ♦ A va la n ch e Rugged T e ch n o lo g y ♦ ^D S o n = Rugged G ate O xide T e ch n o lo g y ♦ Low er Input C apa citance lD = ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a
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IRFP450A
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