of 2n2905
Abstract: 2N2905 equivalent 2N2905 transistor transistor 2N2905 2N2905
Text: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)
|
Original
|
2N2905
O205AD)
1-Aug-02
of 2n2905
2N2905 equivalent
2N2905 transistor
transistor 2N2905
2N2905
|
PDF
|
2N2905AL
Abstract: No abstract text available
Text: 2N2905AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
|
Original
|
2N2905AL
O205AA)
20-Aug-02
2N2905AL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N2905ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)
|
Original
|
2N2905ACSM
2-Aug-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)
|
Original
|
2N2905
O205AD)
19-Jun-02
|
PDF
|
2n2905
Abstract: No abstract text available
Text: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)
|
Original
|
2N2905
O205AD)
17-Jul-02
2n2905
|
PDF
|
TO-205AA
Abstract: 2N2905L TO205AA
Text: 2N2905L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
|
Original
|
2N2905L
O205AA)
20-Aug-02
TO-205AA
2N2905L
TO205AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N2905ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)
|
Original
|
2N2905ACSM
17-Jul-02
|
PDF
|
2N2905
Abstract: No abstract text available
Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics
|
Original
|
2N2905AHR
2N2905AHR
2N2905
|
PDF
|
2N2905At
Abstract: No abstract text available
Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics
|
Original
|
2N2905AHR
2N2905AHR
2N2905At
|
PDF
|
2N2905AT1
Abstract: No abstract text available
Text: 2N2905AHR PNP low power transistors for Hi-Rel applications Features • Low voltage ■ Low current ■ Linear gain characteristics Applications ■ Low current switching ■ Linear preamplifier TO-39 Description The 2N2905AHR is a silicon planar epitaxial PNP
|
Original
|
2N2905AHR
2N2905AHR
2N2905AT1
2N290
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL
|
Original
|
2N2905AHR
2N2905AHR
|
PDF
|
2N2905AT1
Abstract: 2N2905AHR st marking code
Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL
|
Original
|
2N2905AHR
2N2905AHR
2N2905AT1
st marking code
|
PDF
|
DMF50081NB-FW
Abstract: alps lcd 14 pin DMF50081N DC-AC Power Inverter schematic alps LCD lcd inverter board schematic sharp lm32p10 optrex lcd schematic diagram dc-ac inverter 14 pin lcd
Text: N Using an LCD with the NS486SXF Evaluation Board NS486SXF Application Note Version 1.0 April 22, 1997 Michael C. Draeger Senior Software Engineer National Semiconductor Corporation Contents Introduction . 3
|
Original
|
NS486SXF
DMF50081NB-FW
alps lcd 14 pin
DMF50081N
DC-AC Power Inverter schematic
alps LCD
lcd inverter board schematic
sharp lm32p10
optrex lcd
schematic diagram dc-ac inverter
14 pin lcd
|
PDF
|
lf411
Abstract: LM741 NPN-2N2219 LH0094 2N2905 NATIONAL
Text: LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description Features These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply
|
Original
|
LF411
LM741
9-Apr-96
4-Nov-95
AN-637:
LH0094
AN-301:
5-Aug-95
NPN-2N2219
2N2905 NATIONAL
|
PDF
|
|
|
lf411
Abstract: No abstract text available
Text: LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description Features These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast
|
Original
|
LF411
LM741
4-Nov-95
9-Apr-96
5-Aug-95
|
PDF
|
1N6762
Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index
|
Original
|
MIL-PRF-19500
2N720A
2N1131
2N1132
2N1893
JANHC2N2222A
JANKC2N2222A
JANH3057A
2N3250A
2N3251A
1N6762
JANKC2N2907A
NES 2n4405
2N5684 JANTX
2n3031
2N6351
2N5415
2N2907AUB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LT1014, LT1014A, LT1014D QUAD PRECISION OPERATIONAL AMPLIFIERS SLOS039C – JULY 1989 – REVISED SEPTEMBER 1999 D D D D D D D D DW PACKAGE TOP VIEW Single-Supply Operation: Input Voltage Range Extends to Ground, and Output Swings to Ground While Sinking Current
|
Original
|
LT1014,
LT1014A,
LT1014D
SLOS039C
LT1014
MSOP/SOIC/SOT-23
|
PDF
|
lm358 application note
Abstract: LT1013A LT1013 equivalent
Text: LT1013, LT1013A, LT1013D, LT1013Y DUAL PRECISION OPERATIONAL AMPLIFIERS SLOS018B – MAY 1988 – REVISED OCTOBER 1996 D D D D D 1IN + VCC – 2IN + 2IN – 8 2 7 3 6 4 5 1IN – 1OUT VCC + 2OUT FK PACKAGE TOP VIEW NC 1IN – NC 1IN + NC description The LT1013 is a dual precision operational
|
Original
|
LT1013,
LT1013A,
LT1013D,
LT1013Y
SLOS018B
LT1013A
lm358 application note
LT1013 equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 25µA Micropower Voltage References ISL21070 Features The ISL21070 voltage references are analog voltage references featuring low supply voltage operation at ultra-low 25µA max operating current. • Reference output voltage . . . . . . . . . 0.600V, 2.048V, 2.500V
|
Original
|
ISL21070
ISL21070
30ppm/Â
ISL21070-06
AMSEY14
5m-1994.
O-236.
FN7599
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 25µA Micropower Voltage References ISL21070 Features The ISL21070 voltage references are analog voltage references featuring low supply voltage operation at ultra-low 25µA max operating current. • Reference output voltage . . . . . . . . . 0.600V, 2.048V, 2.500V
|
Original
|
ISL21070
ISL21070
30ppm/Â
ISL21070-06
AMSEY14
5m-1994.
O-236.
FN7599
|
PDF
|
2n2222 spice model
Abstract: No abstract text available
Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate
|
Original
|
2N7637-GA
2N7637
8338E-48
0733E-26
73E-10
86E-10
90E-2
2N7637-GA
2n2222 spice model
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area
|
Original
|
2N7636-GA
2N7636
8338E-48
0733E-26
37E-10
97E-10
50E-02
2N7636-GA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate
|
Original
|
2N7638-GA
2N7638
8338E-48
0733E-26
73E-10
86E-10
90E-2
2N7638-GA
|
PDF
|
LM741
Abstract: LH0094
Text: LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description Features These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast
|
Original
|
LF411
LM741
AN-272:
AN-344:
LF13006/LF13007
LH0094
4Nov95
|
PDF
|
