B200
Abstract: No abstract text available
Text: D Band Filters for 200GHz Add/Drop Multiplexing Bookham band skip filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter solution. The AED process features state-of-the-art layer thickness control to produce thin-film interference
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200GHz
GR-1221
B200
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Untitled
Abstract: No abstract text available
Text: Safety module - IB IL 24 PSDOR 4-PAC - 2985864 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid
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com/us/produkte/2985864
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog IB IL SSI-IN-PAC Order No.: 2819574 Inline measurement terminal block for absolute encoders, complete with accessories connector and labeling field , 1 input for absolute
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AX-2009)
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA1000â
CxxxDA1000-Sxx000
DA1000
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Untitled
Abstract: No abstract text available
Text: IBS IL 24 BK-LK INTERBUS Inline Bus Terminal: Remote Bus Connections Using Fiber Optics Data Sheet 6505A 01/2002 5 5 6 1 C 0 0 1 This data sheet is only valid in association with the "Configuring and Installing the INTERBUS Inline Product Range" User Manual
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931c66
Abstract: ic 8pin C66
Text: 93LC46/56/66 M ic ro c h ip 1K/2K/4K 2.0V CMOS Serial EEPROM FEATURES DESCRIPTION • Single supply with program m ing operation dow n to 2.0V Com m ercial only • Low pow er C M OS technology - 1 m A active current typical - 5 nA standby current (typical) at 3.0V
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93LC46/56/66
93LC46/56/66
8/14-pin
46X/56X/
DS11168H-page
931c66
ic 8pin C66
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Untitled
Abstract: No abstract text available
Text: 93AA46/56/66 1K/2K/4K 1.8V CMOS Serial EEPROM FEATURES • Single supply with program m ing operation down to 1,8V PACKAGETYPE DIP • Low power CMOS technology - 70 nA typical active READ current at 1,8V cs E CLK c 1 ? - 2 nA typical standby current at 1,8V
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93AA46/56/66
93AA46)
93AA56)
93AA66)
93AA66
DS20067E-page
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EPM 5192
Abstract: EPM5192
Text: EPM5192 EPLD Features H igh-density, 192 macrocell, general-purpose MAX 5000 EPLD, easily integrating com plete logic boards into a single package High-speed multi-LAB architecture t PD as fast as 25 ns Counter frequencies up to 50 MHz Pipelined data rates up to 62.5 MHz
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EPM5192
EPM519-
84-Pin
ALTED001
EPM 5192
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EPM7000
Abstract: hhm7
Text: M A X 7000A Includes M A X 70 0 0 A E Programmable Logic Device Family October 1998. ver. 1.2 Data Sheet Formerly know n as Michelangelo devices High-perform ance CMOS EEPROM-based program m able logic devices PLDs built on second-generation M ultiple A rray M atrix
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EPM7128A
EPM7256A
EPM7256A,
100-pin
7000AE
EPM7032AE
EPM7064AE
EPM7000
hhm7
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GS3039
Abstract: EM-3046 ba 521
Text: GENNUM C|CC|ass DHybrid C O R P O R A T I O N GS3039 DATA SHEET FEATURES DESCRIPTION • small outline for CIC applications The GS3Q39 is a G e n n u m p ro p rie ta ry h y b rid fo r C IC a p plication s. It in corpo rates a new ly de sig n e d in tegrated
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GS3039
GS3Q39
EM-3046
ba 521
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Untitled
Abstract: No abstract text available
Text: CIC, Class D Hybrid GS3024A - DATA SHEET FEATURES DESCRIPTION • small outline for CIC applications T he G S 3 0 2 4 A is a G e n n u m p ro p rie ta ry h y b rid fo r CIC a p p lica tio n s. It in c o rp o ra te s a ne w ly d e s ig n e d • designed to drive class D integrated receivers
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GS3024A
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Untitled
Abstract: No abstract text available
Text: cP IITSU April 1998 Revision 1.0 data sheet PDC4 U V6414B-103T-S 32MByte 4M x 64 CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6414B-103T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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V6414B-103T-S
32MByte
PC/100
PDC4UV6414B-103T-S
32-megabyte
168-pin,
MB81F641642B-103FN
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Untitled
Abstract: No abstract text available
Text: . '• N •*> is- • .v : Z>«a/ #0 MHz Current Feedback Amplifiers 1v. EL2232D ï ï sm%mmt t if lf iS lll EL2232DDie crh?^''r4^ V : : | A b so lu te M axim um R a tin g s < ta = 25*0 Vg Supply Voltage ± 18V or + 36V V jn Input Voltage ± 1 5 V o rV s
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15VorVs
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Untitled
Abstract: No abstract text available
Text: cP Sept. 1995 Edition 3.0a DATA SHEET = FUJI' - ß MB508 2.3GHz TWO MODULUS PRESCALER 2.3GHz TWO MODULUS PRESCALER The Fujitsu MB508 is a 2.3GHz two modulus prescaler used with a frequency synthesizer to form a Phase Locked Loop PLL and divides the input frequency
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MB508
MB508
100mVp
100MHz
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breakover device
Abstract: No abstract text available
Text: SbE D • IPHIN 711 D Ö 2 b G041i07D 753 DEVELO PM ENT DATA BR213 SERIES T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. PHILIPS 5bE ]> INTERNATIONAL DUAL BREAKOVER DIODES A range o f m onolithic duai bidirectional breakover diodes w ith ±12% tolerance o f breakover voltage.
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G041i07D
BR213
T-11-23
M2459
breakover device
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EPM7064 100-Pin Package Pin-Out Diagram
Abstract: EPM7064 altera epm 7064 EPM7064-12 EPM7064-15 7064
Text: EPM 7064 EPLD Features □ Preliminary Information □ □ □ □ High-performance, erasable CM OS EPLD based on second-generation MAX architecture 1,250 usable gates Combinatorial speeds with tPD = 7.5 ns Counter frequencies up to 125 MHz Advanced 0.8-m icron CM OS EEPROM technology
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84-pin
100-pin
EPM7064
ALTED001
EPM7064 100-Pin Package Pin-Out Diagram
altera epm 7064
EPM7064-12
EPM7064-15
7064
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Untitled
Abstract: No abstract text available
Text: Microelectronics 41MGL3 Quad Differential Line Driver Features Description • True 3-state output T he 4 1 M G L3 Q uad Differential Line D river integrated circuits are quad T TL-input-to-pseudo-E C L-differen- ■ Pin equivalent to the general-trade 26LS31 device
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41MGL3
26LS31
41MGL3
005002b
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1N4705
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N4678 SERIES 500 mW DO-35 Glass Zener Voltage Regulator Diodes 500 mW DO-35 GLASS GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes GLASS ZENER DIODES 500 MILLIWATTS
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DO-35
1N4678
D0-204AH
D0-204AA
1N4705
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IC ATA 2388
Abstract: ttl to sinus wave converter ATA 2388 PKS 4111 PI pks 4113 PI
Text: DC/DC Power Modules 15 W PKS 4000 PI • High power density of 17 W /in * • Very sm all footprint a n d low profile 36.8 X 41J X 9.7 mm 1.45 x1.64x0.38 in • MTBF is 4 million hours a t + 40 °C ambient temp, per Bellcore • Wide input voltage range:
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S-164
IC ATA 2388
ttl to sinus wave converter
ATA 2388
PKS 4111 PI
pks 4113 PI
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kss 210
Abstract: Q67100-Q3016 Q67100-Q3017
Text: SIEM E N S 4M X 36-Bit EDO-DRAM Module HYM 364035S/GS-60 Advanced Inform ation • 4 194 304 words by 36-Bit organization • Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time • Hyper page mode EDO capability 25 ns cycle time
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36-Bit
364035S/GS-60
L-SIM-72)
L-SIM-72-13
75x157
kss 210
Q67100-Q3016
Q67100-Q3017
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Untitled
Abstract: No abstract text available
Text: IB M 1 3 T 4 6 4 4 M C IB M 1 3 T 1 6 4 9 N C 1M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1 Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency j Units j 3 jf c K j Clock
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BTS650P
Abstract: 11 kv SIEMENS motor data sheet siemens 12V small relays BTS650P E3180A S6308 siemens 230 Siemens varistor 30 V smd code diode 20a smd transistor 2Q 650P
Text: S IE M E N S PROFET Target Data Sheet BTS650P Smart Highside High Current Power Switch Features • Overload protection • Current limitation • • • • • • • • • • • Short circuit protection Overtemperature protection Overvoltage protection including load dump
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220AB/7,
E3180
BTS650P
E3180A
Q67060-S6308-A4
i998-Jan-29
11 kv SIEMENS motor data sheet
siemens 12V small relays
BTS650P E3180A
S6308
siemens 230
Siemens varistor 30 V
smd code diode 20a
smd transistor 2Q
650P
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 256K ’512Kx64 SGRAM SODIMMs TECHNOLOGY, INC. SYNCHRONOUS GRAPHICS RAM DIMM mt2lg25664 K h MT4LG51264<K>H FEATURES PIN ASSIGNMENT (Front View) • 144-pin, small-outline, dual in-line m em ory m odule (DIMM) • 2MB (256K x 64) and 4MB (512K x 64)
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144-pin,
144-PIN
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Untitled
Abstract: No abstract text available
Text: cP IITSU June 1997 Revision 1.1 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UV6484-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as 8M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC8UV6484-
64MByte
64-megabtye
168-pin,
MB81164842A-
125MHz)
67Mhz
84Mhz
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