IRLZ44NS
Abstract: AN-994 IRF530S IRLZ44N
Text: Previous Datasheet Index Next Data Sheet PD - 9.1347A IRLZ44NS PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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IRLZ44NS
IRLZ44NS
AN-994
IRF530S
IRLZ44N
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IRLZ44N
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1346A IRLZ44N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V
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IRLZ44N
O-22Y
IRLZ44N
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IRLU2905
Abstract: U2905 AN-994 IRLR2905 IRLZ44N
Text: Previous Datasheet Index Next Data Sheet PD - 9.1334A IRLR/U2905 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Ultra Low On-Resistance l Surface Mount IRLR2905 l Straight Lead (IRLU2905) l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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IRLR/U2905
IRLR2905)
IRLU2905)
IRLU2905
U2905
AN-994
IRLR2905
IRLZ44N
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BT136-600E equivalent
Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.
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10TQ045S
11DQ03
11DQ04
11EQ03
11EQ04
11EQS
15DF4
1N3645
BT136-600E equivalent
D2499 equivalent
D1878 equivalent
BT139-600 equivalent
C4927
d1577
d1554
C5386
c5129
e13005 equivalent
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gs 069
Abstract: IRLZ44N AN-994 IRLZ44NL IRLZ44NS
Text: PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET
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IRLZ44NS/LPbF
IRLZ44NS)
IRLZ44NL)
EIA-418.
gs 069
IRLZ44N
AN-994
IRLZ44NL
IRLZ44NS
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AN-994
Abstract: IRL3103L IRLZ44N IRLZ44NL IRLZ44NS
Text: PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET
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IRLZ44NS/LPbF
IRLZ44NS)
IRLZ44NL)
EIA-418.
AN-994
IRL3103L
IRLZ44N
IRLZ44NL
IRLZ44NS
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IRLZ44NS
Abstract: AN-994 IRL3103L IRLZ44N IRLZ44NL
Text: PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET
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IRLZ44NS/LPbF
IRLZ44NS)
IRLZ44NL)
EIA-418.
IRLZ44NS
AN-994
IRL3103L
IRLZ44N
IRLZ44NL
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Untitled
Abstract: No abstract text available
Text: PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET
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IRLZ44NS/LPbF
IRLZ44NS)
IRLZ44NL)
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V
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91347D
IRLZ44NS/L
IRLZ44NS)
IRLZ44NL)
pac245,
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AN-994
Abstract: IRLZ44N IRLZ44NL IRLZ44NS
Text: 2002-03-07 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-189-38 IRLZ44NS HEXFET D2Pak PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS
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IRLZ44NS
91347D
IRLZ44NS/L
IRLZ44NS)
IRLZ44NL)
AN-994
IRLZ44N
IRLZ44NL
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IRLZ44NL
Abstract: AN-994 IRLZ44N IRLZ44NS L1000
Text: PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V
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91347D
IRLZ44NS/L
IRLZ44NS)
IRLZ44NL)
IRLZ44NL
AN-994
IRLZ44N
IRLZ44NS
L1000
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AN-994
Abstract: IRLZ44N IRLZ44NL IRLZ44NS
Text: PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V
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91347D
IRLZ44NS/L
IRLZ44NS)
IRLZ44NL)
AN-994
IRLZ44N
IRLZ44NL
IRLZ44NS
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Untitled
Abstract: No abstract text available
Text: PD - 94831 IRLZ44NPbF HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS on = 0.022Ω G ID = 47A
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IRLZ44NPbF
O-220
O-220AB.
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94831 IRLZ44NPbF HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS on = 0.022Ω G ID = 47A
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IRLZ44NPbF
O-220
O-220AB
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IRLZ44NPBF
Abstract: No abstract text available
Text: PD - 94831 IRLZ44NPbF HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS on = 0.022Ω G ID = 47A
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IRLZ44NPbF
O-220
O-220AB.
O-220AB
IRLZ44NPBF
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IRLZ44N
Abstract: No abstract text available
Text: PD - 9.1346B IRLZ44N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.022Ω G ID = 47A S Description Fifth Generation HEXFETs from International Rectifier
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1346B
IRLZ44N
O-220
IRLZ44N
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IRLZ44N
Abstract: 7A25A
Text: PD - 9.1346B IRLZ44N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.022Ω G ID = 47A S Description Fifth Generation HEXFETs from International Rectifier
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1346B
IRLZ44N
O-220
IRLZ44N
7A25A
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IRLZ44N
Abstract: No abstract text available
Text: PD - 9.1346A IRLZ44N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.022Ω G ID = 41A S Description
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IRLZ44N
O-220
IRLZ44N
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Untitled
Abstract: No abstract text available
Text: PD - 9.1346B IRLZ44N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.022Ω G ID = 47A S Description Fifth Generation HEXFETs from International Rectifier
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1346B
IRLZ44N
O-220
commercial-industr245,
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IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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2SK1388
Abstract: cc fuji Fuji Electric LDR SPECIFICATION used in street light monitoring 10SA220M EC10QS02 EC10QS02L MBRB1545CT MTD20N03HDL PE-53680
Text: Electronics Semiconductor Division RC5034 High Accuracy Synchronous DC-DC Converter Features Pentium VREF; 2% accuracy >85% Efficiency 350uA quiescent current in shutdown Fast transient response Soft control power-up Over-Voltage Protection Factory trimmed low TC reference voltage
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RC5034
350uA
RC5034
DS30005034
2SK1388
cc fuji
Fuji Electric
LDR SPECIFICATION used in street light monitoring
10SA220M
EC10QS02
EC10QS02L
MBRB1545CT
MTD20N03HDL
PE-53680
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Untitled
Abstract: No abstract text available
Text: PD - 9.1347A International lö R Rectifier IRLZ44NS PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRLZ44NS
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Sj 47 diode
Abstract: No abstract text available
Text: P D -91347D International IGR Rectifier IR L Z 4 4 N S /L • Logic-Level Gate Drive H EXFET P ow er M O S F E T • • • • • • Advanced Process Technology Surface Mount IRLZ44NS Low-profilethrough-hole (IRLZ44NL) 175°C Operating Temperature
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IRLZ44NS)
IRLZ44NL)
-91347D
Sj 47 diode
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C711 diode
Abstract: c714 diode diode C710 C713 diode C711 c714 IRLZ44NS c710
Text: PD - 9.1347C International IO R Rectifier IRLZ44NS/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRLZ44NS Low-profile through-hole (IRLZ44NL) 175°C Operating Temperature Fast Switching
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IRLZ44NS)
IRLZ44NL)
1347C
IRLZ44NS/L
C-713
C-714
C711 diode
c714 diode
diode C710
C713 diode
C711
c714
IRLZ44NS
c710
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