300V transistor npn 15a
Abstract: MP6501 s1,3/2iv
Text: MP6501 SILICON NPN TRIPLE DIFFUSED TY PE DARLINGTON POWER TRAN SISTO R 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MP6501
300V transistor npn 15a
MP6501
s1,3/2iv
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t01 transistor
Abstract: STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor
Text: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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STD03P
---MT-105
STD03N
T01-002EA-060309
t01 transistor
STD03N
SANKEN AUDIO
sanken transistor
TRANSISTOR sanken catalog
std03
STD03P
darlington transistor for audio power application
8DARLINGTON
sanken power transistor
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TRANSISTOR sanken catalog
Abstract: t01 transistor sanken power transistor sanken t01 STD03N darlington transistor for audio power application darlington transistor with built-in temperature c darlington transistor with built-in temperature sanken audio Power 5pin darlington
Text: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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STD03P
STD03N
---MT-105
T01-002EA-060309
TRANSISTOR sanken catalog
t01 transistor
sanken power transistor
sanken t01
STD03N
darlington transistor for audio power application
darlington transistor with built-in temperature c
darlington transistor with built-in temperature
sanken audio
Power 5pin darlington
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std03n
Abstract: t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio
Text: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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STD03N
STD03P
MT-105
T01-001EA-060309
std03n
t01 transistor
TRANSISTOR sanken catalog
sanken power transistor
T01001
sanken
sanken audio
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TRANSISTOR sanken catalog
Abstract: SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
Text: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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STD03N
MT-105
STD03P
10that
T01-001EA-060309
TRANSISTOR sanken catalog
SANKEN POWER TRANSISTOR
t01 transistor
SANKEN AUDIO
STD03N
STD03P
T01001
B105
sanken transistor
"Sanken Rectifiers"
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2sd2011
Abstract: 2SB1333 transistor 2SD 2sd darlington
Text: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333
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2SD2011
2SB1333
2SD2011,
2sd2011
transistor 2SD
2sd darlington
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FJB102
Abstract: No abstract text available
Text: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors
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FJB102
FJB102
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Untitled
Abstract: No abstract text available
Text: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors
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FJB102
FJB102
FJB102TM
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MG10G6EL2
Abstract: w327 mg10g
Text: MG10G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MG10G6EL2
03CJ10
MG10G6EL2
w327
mg10g
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LB1273R
Abstract: LB1273
Text: Ordering number:ENN667B Monolithic Digital IC LB1273R 6-Unit, Darlington Transistor Array Overview Package Dimensions The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built-in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.
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ENN667B
LB1273R
004A-DIP14TD
26max
18-digit
230mA
LB1273R
LB1273
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MG15G6EL2
Abstract: No abstract text available
Text: MG15G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package . With Built-in Free Wheeling Diode. . High DC Current Gain
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MG15G6EL2
MG15G6EL2
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TRANSISTOR ARRAY
Abstract: NTE2083
Text: NTE2083 Integrated Circuit 6−Segment, 150mA Darlington Transistor Array Description: The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built−in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.
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NTE2083
150mA
18-digit
230mA
TRANSISTOR ARRAY
NTE2083
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2SB1333
Abstract: No abstract text available
Text: 2SB1333 Transistor, PNP Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • • damper diode is incorporated built in resistors between base and emitter complementary pair with 2SD2011
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2SB1333
2SD2011
2SB1333
2SB1333,
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TIP 102 transistor
Abstract: transistor tip 107 Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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TIP100/101/102
TIP105/106/107
TIP101
TIP 102 transistor
transistor tip 107
Transistor tip 102
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Hitachi DSA002756
Abstract: No abstract text available
Text: 2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline 2SD2423 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage
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2SD2423
Hitachi DSA002756
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Untitled
Abstract: No abstract text available
Text: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction
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BA664
BA664
100mA
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tip 102
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
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TIP100/101/102
O-220
TIP105/106/107
TIP101
tip 102
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP145F/146F/147F ABSOLUTE MAXIMUM RATINGS
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TIP140F/141F/142F
TIP145F/146F/147F
TIP140T
TIP141T
TIP142T
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TIP145F
Abstract: TIP146F TIP147F 147F
Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP145F
TIP146F
TIP147F
147F
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TIP102
Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
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TIP100/101/102
O-220
TIP105/106/107
TIP101
TIP102
TIP100
TIP102
NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
TIP102 Darlington transistor
NPN Transistor TO220 VCEO 80V 100V
NPN Transistor 8A
TIP100
TIP101
NPN Transistor VCEO 80V 100V DARLINGTON
TO 106 transistor base collector emitter
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TIP147F
Abstract: TIP146F TIP145F
Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP146F
TIP145F
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2sd1525 toshiba
Abstract: No abstract text available
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
2sd1525 toshiba
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2SD1525
Abstract: 2-21F1A
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
2SD1525
2-21F1A
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Untitled
Abstract: No abstract text available
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
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