uln2003r
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs
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ULN2003R
ULN2003R
500mA.
OP-16
QW-R113-013
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ULN2003 RELAY DRIVER
Abstract: No abstract text available
Text: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode
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ULN2003
ULN2003
500mA.
DIP-16
ULN2003 RELAY DRIVER
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M63828DP
Abstract: 16PIN M63828WP 16P4X-A IL500
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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M63828WP/DP
500mA
M63828WP
M63828DP
500mA)
16P2X-B
16P2X-B
16PIN
16P4X-A
IL500
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M54523
Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
M54523
pnp 8 transistor array
18P4G
20P2N-A
M54583
8 pin 4v power supply ic
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M54583FP
Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
pnp darlington array
M54523
PNP DARLINGTON ARRAYS
18P4G
20P2N-A
M54583
pnp 8 transistor array
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IL500
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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Original
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M63827WP/DP
500mA
M63827WP
M63827DP
500mA)
16P2X-B
16P2X-B
16PIN
IL500
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M54522
Abstract: m54566 M54566WP
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54566WP
400mA
M54566WP
400mA)
M54522
m54566
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8 pin 4v power supply ic
Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54566P/FP
400mA
M54566P
M54566FP
400mA)
8 pin 4v power supply ic
Seven Transistor Array PNP
M54222
pnp 8 transistor array
pnp DARLINGTON TRANSISTOR ARRAY
PNP DARLINGTON ARRAYS
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18P4G
Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP
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M54562P/FP
500mA
M54562P
M54562FP
500mA)
18P4G
20P2N-A
pnp darlington array
pnp 8 transistor array
npn 8 transistor array
24 "transistor array"
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M54522
Abstract: M54566DP Seven Transistor Array PNP m54566
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated
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M54566DP
400mA
M54566DP
400mA)
Jul-2011
M54522
Seven Transistor Array PNP
m54566
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XR-2011
Abstract: XR2011 XR2013CN XR2013 XR-2012
Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2011/12/13/14
XR-2011/2012/2013/2014
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2011
XR2011
XR2013CN
XR2013
XR-2012
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M54523
Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
M54523
18P4G
20P2N-A
M54583
pnp 8 transistor array
8-channel PNP darlington array
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M63827DP
Abstract: M63827WP 16PIN 16P4X-A IL500
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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Original
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M63827WP/DP
500mA
M63827WP
M63827DP
500mA)
16P2X-B
16P2X-B
16PIN
16P4X-A
IL500
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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Original
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M63828WP/DP
500mA
M63828WP
M63828DP
500mA)
16P2X-B
16P2X-B
16PIN
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darlington pair transistor
Abstract: J 620 610 transistor DARLINGTON ARRAYS darlington pair power transistor darlington pair transistor table ILN2003 darlington power transistor Monolithic Transistor Pair ILN2003A KK2003A
Text: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The KK2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The
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KK2003A
500-mA
012AC)
darlington pair transistor
J 620 610 transistor
DARLINGTON ARRAYS
darlington pair power transistor
darlington pair transistor table
ILN2003
darlington power transistor
Monolithic Transistor Pair
ILN2003A
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M54519P
Abstract: M54519FP IC M54519P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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M54519P/FP
400mA
M54519P
M54519FP
400mA)
IC M54519P
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Untitled
Abstract: No abstract text available
Text: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2001
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
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PDF
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ILN2003AD
Abstract: ILN2003AN darlington pair transistor ILN2003A J 620 610 transistor seven transistor drivers
Text: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The ILN2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The
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ILN2003A
500-mA
012AC)
ILN2003AD
ILN2003AN
darlington pair transistor
J 620 610 transistor
seven transistor drivers
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2002cn
Abstract: XR-2001 XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN
Text: Z * EXAR XR-2001/2/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM V The XR-2001/2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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OCR Scan
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XR-2001/2/3/4
XR-2001
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
2002cn
XR-2001CN
XR-2002
XR-2002CN
XR-2003
XR-2003CN
XR-2004
XR-2004CN
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pnp darlington array
Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54587P/FP
500mA
M54587P
M54587FP
pnp darlington array
PNP DARLINGTON SINK DRIVER 500ma
pnp 8 transistor array
pnp DARLINGTON TRANSISTOR ARRAY
darlington Mitsubishi
M54585
darlington array
M54587
20P2N-A
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PDF
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XR-2203
Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil icon NPN Darlington pairs on a single monolithic sub
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XR-220172/3/4
XR-2201,
XR-2202,
XR-2203,
XR-2204
500mA
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2203
XR-2203CP
XR2203CP
XR2204CP
2203CP
XR-2202
2204cp
XR2203
XR2204
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform
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M54561P
300mA
M54561P
300mA)
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PDF
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M54516P
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54516P
500mA
M54516P
500mA)
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NPN DARLINGTON TRANSISTOR ARRAY
Abstract: 300 W npn darlington power transistors M54522WP Transistor Array
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522WP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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Original
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M54522WP
400mA
M54522WP
400mA)
Jul-2011
NPN DARLINGTON TRANSISTOR ARRAY
300 W npn darlington power transistors
Transistor Array
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PDF
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