330105
Abstract: 143-754 metelics 2598 85890 121-270 544 mmic MMA602 462501 97346 550538
Text: MMA602 Darlington HBT Die FEATURES • 100 KHz to 5 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept The MMA602 is a MMIC InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier provided in die form. The amplifier
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MMA602
MMA602
P-974279E-01
046998E-01
059359E-01
053424E-01
004735E-01
996801E-01
057717E-01
330105
143-754
metelics 2598
85890
121-270
544 mmic
462501
97346
550538
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modem hybrid separate transmit
Abstract: OPTOCOUPLER 4n35 datasheet operational amplifier discrete schematic LH1056 LH1540 optocoupler as isolated linear opamp lm324 using sensing photo-diode bias norton amplifier 2N3906 Central
Text: Application Note 53 Vishay Semiconductors Optocouplers Isolate Modem Data Access Arrangement DATA ACCESS ARRANGEMENT – DAA Laptop, palmtop, and pen-based computer modem manufacturers are seeking ways to accommodate the small form factor of the PCMCIA peripheral cards. They are
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IL350
29-Apr-08
IL350,
OT223
modem hybrid separate transmit
OPTOCOUPLER 4n35 datasheet
operational amplifier discrete schematic
LH1056
LH1540
optocoupler as isolated linear opamp
lm324 using sensing
photo-diode bias
norton amplifier
2N3906 Central
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TIP 100/TIP 102 RfflDOlñ!<s [l[L[ie,ü’[KÍ@RDD S$ TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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100/TIP
TIP105/TIP106/TIP107
TIP100
TIP102
T0-220
TIP105
TIP107
TIP106
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sgs110
Abstract: SGS116
Text: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration
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TIP/SGS110-111-112
TIP/SGS115-116-117
TIP110,
TIP111,
TIP112
SGS110,
SGS111,
SQS112
O-220
OT-82
sgs110
SGS116
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SGS136
Abstract: sgs131
Text: 7^S^S37 0 Ü2 * 27 S 4 • H ” 7 3 » V 2 -° \ SCS-THOMSON TIP/SGS130-131-132 ilLiûïM«! TIP/SGS135-136-137 S G S-THOMSON 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP130, TIP131, TIP132 and SGS130, SGS131, SQS132 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration
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TIP/SGS130-131-132
TIP/SGS135-136-137
TIP130,
TIP131,
TIP132
SGS130,
SGS131,
SQS132
O-220
OT-82
SGS136
sgs131
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102
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TIP105/106/107
TIP106
TIP107
TIP105
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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TIP100/101/102
TIP101
TIP102
TIP100
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TIP105
Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
TIP-106
TIP107
TIP106
transistor TIP105
NPN Transistor VCEO 80V 100V DARLINGTON
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TIP100
Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Text: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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TIP100/101
TIP105/106/107
O-220
TIP100
TIP101
TIP102
900MA
TIP101
TIP102
NPN Transistor 8A
TIP102 Darlington transistor
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tip 102
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
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TIP100/101/102
O-220
TIP105/106/107
TIP101
tip 102
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TIP 102 transistor
Abstract: transistor tip 107 Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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TIP100/101/102
TIP105/106/107
TIP101
TIP 102 transistor
transistor tip 107
Transistor tip 102
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tip 102
Abstract: e 616 tip 226 darlington npn tip 102 E616 TIP101 darlington tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRAN SISTO R T IPI 00/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ V c e = 4 V , lc=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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TIP105/106/107
TIP100
TIP101
TIP102
tip 102
e 616
tip 226
darlington npn tip 102
E616
TIP101
darlington tip 102
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tip 102
Abstract: Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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TIP100/101/102
TIP105/106/107
TIP101
TIP101
tip 102
Transistor tip 102
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T1P110
Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER
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TIP105/106/107
000772a
TIP100/101/102
TIP105
TIP106
TIP107
T1P105
TIP115:
T1P110
transistor tip 107
T1P111
T1P105
darlington npn tip 102
np112
VCS-60V
T1P115
L08M
darlington tip 102
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Tip 107 C
Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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I05/106/107
TIP100/101/102
TIP107
TIP105/106/107
Tip 107 C
transistor tip 107
e 616
E616
IP107
tip 105
tip 107
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IVD12
Abstract: IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100
Text: O K I sem iconductor M SA 4709 / SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The M5A4709 is designed to provide BSH functions and to m eet PA B X transmission perform ance requirements. This device can replace the hybrid transform er circuit. FEATURES
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M5A4709
150KH
2SB1061
2SD1502
PABX-MSA4709
IVD12
IVD10
4709 bt
bt 4709
hitachi slic application note
48V 2w zener diode
SCR SN 100
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Tip 106
Abstract: TIP106
Text: SGS-THOMSON TIP100/TIP102 illSBTMIKgS TIPI 05/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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TIP100/TIP102
05/TIP106/TIP107
TIP100
TIP102
T0-220
TIP105
TIP107
TIP106
Tip 106
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TIP 107
Abstract: transistor tip 107 transistor t0-220 TO 106 transistor base collector emitter
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ V e e r -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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I05/106/107
T0-220
TIP100/101/102
TIP105
TIP106
TIP106
TIP107
-80mA
TIP105/106/107
TIP 107
transistor tip 107
transistor t0-220
TO 106 transistor base collector emitter
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transistor tip 412
Abstract: No abstract text available
Text: P0Ù1EREX m 3<iE D INC ¥ E R E m S mP RX DD0M500 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107,72003 Le Mans, France (43) 41.14.14 r - $ l'3 £ ' KD221K75HB High-Beta Dual Darlington
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DD0M500
BP107
KD221K75HB
Amperes/1000
transistor tip 412
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Untitled
Abstract: No abstract text available
Text: T IP 1 1 0 TIP111 T IP 1 1 2 _ J V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. P-N-P complements are
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TIP111
O-220AB
TIP115,
11in-----
11m-----â
111UJ,
bbS3T31
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Untitled
Abstract: No abstract text available
Text: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit
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TIP100/101/102
TIP105/106/107
TIP100,
TIP101
TIP102
O-220
TIP105,
TIP106
TIP107
100-T
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P112
Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are
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TIP110
TIP111
711002b
T-33-Z
T0-220AB
TIP115,
TIP116
TIP111
TIP112
P112
darlington npn tip 102
TIP112
TIP115
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T1P126
Abstract: transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp
Text: 1 4E D SAMSUNG SEMICONDUCTOR INC I 7^4145 0007734 J 3 NPN CKII AXIAL SILICO I DARLINGTON TRANSISTOR TIP120 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125 AB SO LU T E M A X IM U M RATINGS Ta=25°C Characteristic Collector-Base Voltage
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TIP120
TIP125
O-220
T1P126
transistor g35
B250H
TIPI20
transistor darlington TIP-120
TIP120
TIP125
TB-127
tip120 pnp
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MDA220
Abstract: MOC3030 application notes VQB 28 E MC14404 2N6558 MK1V135 mc145414 2N6558 MOTOROLA mc3417 power supply ctx monitor 762
Text: MOTOROL A SC {TELECOM}- 01 D e | L3b75S3 00flQM3t. 1 I -r~ v s '" // - ¡ y MC3419-1L TELEPHONE LINE-FEED CIRCUIT . . . designed as the heart of a circuit to provide BORSHT functions for telephone service in Central Office, PABX, and Subscriber Car rier equipment. This circuit provides dc power for the telephone
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3b75S3
MC3419
moc3030
mje271
mje270
mpsa56
2n3905
1n4007
MDA220
MOC3030 application notes
VQB 28 E
MC14404
2N6558
MK1V135
mc145414
2N6558 MOTOROLA
mc3417
power supply ctx monitor 762
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