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    DARLINGTON PAIR PNP Search Results

    DARLINGTON PAIR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MP-5ERJ45UNNB-014 Amphenol Cables on Demand Amphenol MP-5ERJ45UNNB-014 Cat5e UTP Patch Cable (350-MHz) with Snagless RJ45 Connectors - Blue 14ft Datasheet
    MP-5ERJ45UNNK-005 Amphenol Cables on Demand Amphenol MP-5ERJ45UNNK-005 Cat5e UTP Patch Cable (350-MHz) with Snagless RJ45 Connectors - Black 5ft Datasheet
    MP-5ERJ45UNNO-014 Amphenol Cables on Demand Amphenol MP-5ERJ45UNNO-014 Cat5e UTP Patch Cable (350-MHz) with Snagless RJ45 Connectors - Orange 14ft Datasheet
    MP-5ERJ45UNNV-005 Amphenol Cables on Demand Amphenol MP-5ERJ45UNNV-005 Cat5e UTP Patch Cable (350-MHz) with Snagless RJ45 Connectors - Violet 5ft Datasheet

    DARLINGTON PAIR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Darlington pair

    Abstract: "Small Signal Amplifier"
    Text: Transistors USA / European specification models types FTO-92 / PNP type General purpose small signal amplifier TO-92 package General purpose amplification and switching Medium power amplification Darlington pair type 89


    Original     		PDF FTO-92 Darlington pair "Small Signal Amplifier"

    2SB1387

    Abstract: 2SD1978 Hitachi DSA00493
    Text: 2SB1387 Silicon PNP Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SD1978 Outline 2SB1387 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage


    Original     		PDF 2SB1387 2SD1978 2SB1387 2SD1978 Hitachi DSA00493

    Darlington pair

    Abstract: darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor
    Text: Transistors USA / European specification models types [Leaded type] FTO-92 / NPN type General purpose small signal amplifiers General purpose amplification and switching Medium power amplification Darlington pair type 88 TO-92 package Transistors USA / European specification models types


    Original     		PDF FTO-92 Darlington pair darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor

    113 marking code PNP transistor

    Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
    Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3


    OCR Scan     		PDF 2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 113 marking code transistor T146 transistor PNP transistor 2SB

    103 transistor

    Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
    Text: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)


    OCR Scan     		PDF 2SB1183F5 SC-63) B1183 2SD1759 2SB1183F5 001470a 001471G 2SB1183F5, 103 transistor marking code SSs transistor PNP 2sb transistor LB 122 transistor

    B1316

    Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
    Text: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •


    OCR Scan     		PDF 2SB1316F5 SC-63) B1316 2SB1316F5 DIODE B1316 B-1316 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking

    113 marking code PNP transistor

    Abstract: 2sb darlington Darlington pair pnp
    Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)


    OCR Scan     		PDF 2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 2sb darlington Darlington pair pnp

    2SA transistor

    Abstract: high current Darlington pair IC
    Text: 2SA830S Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in SPT (SC-72) package • Darlington connection provides high gain, typically hFE = 20000 at lc = -100 mA 2SA830S (SPT) • built-in resistance of approximately 4 k il between base and emitter


    OCR Scan     		PDF 2SA830S SC-72) 2SC1645S 2SA830S 2SA transistor high current Darlington pair IC

    transistor a13

    Abstract: transistor AS 431 A13 transistor
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 0S0433A 00[l3fc.bl 1 ■ T - 9 J-O I PROCESS BOB Process BOB PNP Darlington Transistor Process BOB is a PN P silicon epitaxial planar Darlington pair. It is designed for use in high-current, high-gain amplifier applications. Its NPN comple­


    OCR Scan     		PDF 0S0433Ã 1000mA transistor a13 transistor AS 431 A13 transistor

    b1316

    Abstract: B131-6
    Text: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated


    OCR Scan     		PDF 2SB1316F5 SC-63) B1316 2SB1316F5 2SB1316F5, B131-6

    B1183

    Abstract: Darlington pair IC single
    Text: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • • • • available in CPT F5 (SC-63) package package marking: B1183*Q, where ★ is hFE code and Q is lot number Darlington connection provides high dc current gain (hFE) includes 4 k£2 (typical) base-to-emitter


    OCR Scan     		PDF 2SB1183F5 SC-63) B1183 2SD1759 2SB1183F5 2SB1183F5, Darlington pair IC single

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 05QM33Ö Ü003723 Ö ■ T -9 1-0 1 PR O CESS SRB Process SRB PNP Darlington Transistor Process S R B is a double-diffused silicon epitaxial P N P Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits


    OCR Scan     		PDF Q50M33Ã T-91-01 T-91-01

    2SB939

    Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
    Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching


    OCR Scan     		PDF 2SB939, 2SB939A 2SD1262, 2SD1262A 2SB939 2SB939A 2SD1262 2SD1262A high current Darlington pair IC

    2SB1194

    Abstract: 2SD1633
    Text: Power T ransistors 2SB1194 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Switching Complementary Pair with 2SD1633 •Features • • • • Unit • mm ,10.2max._ 5.7max. High speed switching Good linearity of DC current gain


    OCR Scan     		PDF 2SB1194 2SD1633 b13205E 2SB1194 2SD1633

    2SB950A

    Abstract: 2SB950 2SD1276 2SD1276A
    Text: Power Transistors 2SB950, 2SB950À 2SB950, 2SB950A Package Dimensions U n it I mm 4.4max. 10.2m ax, Silicon PNP Epitaxial Planar Darlington Type 5.7iria*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD 1276, 2S D 1276A * 3 .1 ± 0 .1 • Features


    OCR Scan     		PDF 2SB950, 2SB950Ã 2SB950A 2SD1276, 2SD1276A 2SB950 2SB950A 2SD1276 2SD1276A

    2SB1180

    Abstract: panasonic 2SB panasonic 2SD
    Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A • Package Dimensions U nit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3m ax. Medium Speed Power Switching . Complementary Pair with 2SD 1750, 2SD 1750A 3.2m ax. 0 . 9 1 0.1 0.5max, ■ Features


    OCR Scan     		PDF 2SB1180, 2SB1180A 2SB1180 panasonic 2SB panasonic 2SD

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB11G8 2SB1108 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2SD1608 U n it : 4 4 max. 10.2max. • Features !,9max. • High DC c u rre n t gain hFE • High speed switching


    OCR Scan     		PDF 2SB11G8 2SB1108 2SD1608 100X2mm 01b223

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SBV418, 2SB1418À 2SB1418, 2SB1418A Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD2138 •Features • High DC current gain Iif e • High speed switching • Automatic mounting by radial taping is possible. ‘


    OCR Scan     		PDF 2SBV418, 2SB1418Ã 2SB1418, 2SB1418A 2SD2138 2SB1418

    Untitled

    Abstract: No abstract text available
    Text: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 050M33Ö 0003721 4 ■ ALGR T-91-01 PROCESS SQL Process SQL NPN Darlington Transistor Process SQ L is a double-diffused silicon epitaxial NPN Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits


    OCR Scan     		PDF 50M33Ã 00G3751 T-91-01 500mA Q0G3722 T-91-01

    2SB1254

    Abstract: 2SD1894 high current Darlington pair IC Darlington pair IC
    Text: Power Transistors 2SB 1254 Package Dimensions Unit : mm Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2S D 1894 1 5.5m ax. 5 2m ax. - s3 .2 • Features • Optimum for 60W hi-fi output • High DC current gain hpE


    OCR Scan     		PDF 2SB1254 2SD1894 TV-25T 001b2fl3 32BS2 2SB1254 2SD1894 high current Darlington pair IC Darlington pair IC

    2SB950A

    Abstract: 2SB950 2SD1276 2SD1276A
    Text: Power Transistors 2SB950, 2SB950À Package Dimensions 2 SB9 5 0 , 2 SB9 5 0 A U nit * mm Silicon PNP Epitaxial Planar Darlington Type 4 4max. 10.2tnax, 5.7ma*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD1276, 2SD1276A •Features • High DC current gain


    OCR Scan     		PDF 2SB950, 2SB950A 2SD1276, 2SD1276A 2SB950 2SB950A 2SD1276 2SD1276A

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1254 2SB1254 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Unit m Power Amplifier Complementary Pair with 2SD 1894 15 .5 max. 5 2max 1- /3 ,2 6.9m m . • Features • • • • Optimum for 60W hi-fi output


    OCR Scan     		PDF 2SB1254 10Vxo

    2SB1180

    Abstract: 2SB1180A 2SD1750 2SD1750A
    Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching . Complementary Pair with 2SD1750, 2SD1750A • Features ‘ • High DC c u rre n t gain Iif e • High sp eed sw itching


    OCR Scan     		PDF 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A

    2sb951a

    Abstract: 2SB951 2SD1277 2SD1277A
    Text: Power T ranslstors 2SB951, 2SB951A 2SB951, 2SB951A Package Dimensions SHicon PNP Epitaxial Planar Darlington Type U nit ! mm 10.2max., 4 4 max. 5.7 max. Medium Speed Switching Complementary Pair with 2SD 1277, 2S D 1277A 2.9mix. o +l • Features \ 03.1± O .l


    OCR Scan     		PDF 2SB951, 2SB951A 2SD1277, 2SD1277A 2SB951 2sb951a 2SD1277 2SD1277A