Darlington pair IC high current
Abstract: darlington pair power transistor schmitt trigger IC
Text: IS652A IS653A MATCHED EMITTER DETECTOR PAIR PHOTO DARLINGTON OUTPUT PACKAGES CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS652A IS653A 2.84 0.45 DESCRIPTION The IS652A Gallium Arsenide Infrared Emitting Diode and the IS653A(NPN Silicon Photo Darlington
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IS652A
IS653A
IS652A
IS653A
Darlington pair IC high current
darlington pair power transistor
schmitt trigger IC
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Darlington pair IC
Abstract: Darlington pair IC high current darlington pair power transistor schmitt trigger IC
Text: IS652A IS653A MATCHED EMITTER DETECTOR PAIR PHOTO DARLINGTON OUTPUT ISOCOM PACKAGES LTD CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS652A IS653A 2.84 0.45 DESCRIPTION The IS652A Gallium Arsenide Infrared Emitting Diode and the IS653A(NPN Silicon Photo Darlington
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IS652A
IS653A
IS652A
IS653A
Darlington pair IC
Darlington pair IC high current
darlington pair power transistor
schmitt trigger IC
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Untitled
Abstract: No abstract text available
Text: Application Note AN-60-032 Uses and Advantages of “MERA” Dual Matched MMIC Amplifiers 1.0 Introduction The Mini-Circuits ERA and Gali series of amplifiers are monolithic HBT devices in Darlington configuration. They are wide band 50-ohm amplifiers that are easy to use, as they require very few external components. Wide
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AN-60-032)
50-ohm
AN-60-032
M150621
AN60032
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OZ 9976
Abstract: 7433 7433 diagram DL1020 DL805 MERA-533 MERA-556 MERA-7433 MERA-7456 AN-60-032
Text: Application Note AN-60-032 Uses and Advantages of “MERA” Dual Matched MMIC Amplifiers 1.0 Introduction The Mini-Circuits ERA and Gali series of amplifiers are monolithic HBT devices in Darlington configuration. They are wide band 50-ohm amplifiers that are easy to use, as they require very few external components. Wide
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AN-60-032)
50-ohm
AN-60-032
M94453
AN60032
OZ 9976
7433
7433 diagram
DL1020
DL805
MERA-533
MERA-556
MERA-7433
MERA-7456
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NPN Monolithic Transistor Pair
Abstract: Darlington pair IC darlington pair transistor NTE904
Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
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NTE904
NTE904
12-Lead
31-j1
NPN Monolithic Transistor Pair
Darlington pair IC
darlington pair transistor
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Darlington pair IC
Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
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NTE904
NTE904
Darlington pair IC
darlington pair transistor
NPN Monolithic Transistor Pair
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m061
Abstract: 2N2707 PA6015 m0702 2N4107 VC80 8VC80
Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE M Ie Max (A) fT (Hz) Po Max (W) Mati. Description Package Style Complimentary Monolithic Pairs 5 10 15 20 25 30 35 40 8013580136 80137B0138 8013980140 8020180202 8020380204 8022680227
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80137B0138
2N4079
2N4107
2N4136
2N531
2N532
2N533
m061
2N2707
PA6015
m0702
VC80
8VC80
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BDV67
Abstract: BDV66A BDV67A BDV67C BDV97 BDV66
Text: BDV67A; B BDV67C; D DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. PNP complements are B D V 66A , B, C and D. Matched complementary pairs can be supplied. _
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BDV67A;
BDV67C;
BDV66A,
BDV67A
BDV67
BDV97
8DV67
bbS3T31
BDV66A
BDV67C
BDV66
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bov66a
Abstract: .7Z24 BDV66A BDV66C BDV67A DARLINGTON 10A
Text: l+ BDV66A; BDV66C- is o DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. N-P-N complements are BD V67A; B; C and D. Matched complementary pairs can be supplied.
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BDV66A-BDV66C;
BDV67A;
bdv66a
bdv66OK
7Z38Q57
BDV66A;
BDV66C;
7Z31Q16
7Z24095
bov66a
.7Z24
BDV66C
BDV67A
DARLINGTON 10A
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Untitled
Abstract: No abstract text available
Text: BDV67A; B BDV67C; D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. PNP complements are B D V 6 6 A , B, C and D. Matched complementary pairs can be supplied.
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BDV67A;
BDV67C;
bb53T31
003Mfl3b
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BDV66C
Abstract: BDV67A BDV66A BDV66B Complementary Darlington Audio Power Amplifier bov66 BOV66D
Text: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. N-P-N complements are B D V 67 A ; B; C and D. Matched complementary pairs can be supplied.
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BDV66A;
BDV66C;
BDV67A;
BDV66A
OT-93
BOV66D
tbS3T31
7ZB1016
BDV66C
BDV67A
BDV66B
Complementary Darlington Audio Power Amplifier
bov66
BOV66D
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BD 669
Abstract: No abstract text available
Text: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. N-P-N complements are B D V 6 7 A ; B; C and D. Matched complementary pairs can be supplied.
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BDV66A;
BDV66C;
bbS3T31
0Q34A23
bbS3331
0034A24
BD 669
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BDV67C
Abstract: BDV67D BDV66A BDV67A 3kf2
Text: BDV67A; B BDV67C; D 2.90 n<a0 DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors for audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 6 6 A , B, C and D. Matched complementary pairs can be supplied.
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BDV67A;
BDV67C;
BDV66A,
BDV67A
BDV67Bi
BDV67C
BDV67D
BDV67D
BDV66A
3kf2
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H23B1
Abstract: 100KA 327T
Text: E SOLID STATE Dl D E | 3fl?soai D G n a n a t Optoelectronic Specifications. Matched Emitter-Detector Pair H23B1 8YM The GE Solid State H23B] is a matched emitter-detector pair which consists of a gallium arsenide, infrared emitting diode and a silicon, darlington connected, phototransistor. The clear epoxy packaging
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H23B1
H23B1
100KA
327T
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BDV67D
Abstract: BDV67A BDV66A BDV67C T-13 D 1413 transistor 8dv67
Text: BDV67A; B BDV67C; D V PHILIPS INTERNATIONAL StE ]> • TllGÔBb 0DM33T2 Til ■ PHIN T - 1 3 DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. PNP complements are B D V 6 6 A , B, C and D. Matched complementary pairs can be supplied.
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BDV67A;
BDV67C;
BDV66A,
BDV67A
711002b
BDV67D
BDV66A
BDV67C
T-13
D 1413 transistor
8dv67
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darlington complementary power amplifier
Abstract: No abstract text available
Text: BDV66A; B BDV66C;D PHILIPS INTERNATIONAL SbE D • 711002b DDM337Ô 5 m ■ PHIN T - 3 3 - 3 ’ / DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. N-P-N complements are BDV67A; B; C and D. Matched complementary pairs can be
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BDV66A;
BDV66C
711002b
DDM337Ô
BDV67A;
BDV66A
OT-93
BDV66C;
darlington complementary power amplifier
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TRANSISTOR 642
Abstract: ca301b transistor 123 DL CA3018 CA3018A ICAN-5296 529B I426 f425 CA3016
Text: Arrays E SOLID STATE 01 1 e | 3075001 DGlMSfifl 5 | CA3018, CA3018A General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range features: Matched monolithic general
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CA3018,
CA3018A
CA3018)
CA3018A
CA3018
I4260AI
92CS-M258RI
92CS-IS196
TRANSISTOR 642
ca301b
transistor 123 DL
ICAN-5296
529B
I426
f425
CA3016
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nte280
Abstract: nte291
Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280
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280MP
NTE274)
NTE281)
NTE280
284MP
281MCP
NTE291)
292MCP
NTE292
NTE291
nte280
nte291
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AN5296 Application note CA3018
Abstract: AN5296 Application of the CA3018 Integrated
Text: CA3018, CA3018A January 1999 File Number General Purpose Transistor Arrays Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. • Matched Monolithic General Purpose Transistors Two of the four transistors are connected in the Darlington
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CA3018,
CA3018A
CA3018
CA3018A
AN5296 Application note CA3018
AN5296 Application of the CA3018 Integrated
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AN5296 Application note CA3018
Abstract: AN5296 Application of the CA3018 Integrated AN5296 Application of the CA3018 an5296 Harris CA3018 CA3018 CA3018A AN5296 application note an5296 ca3018 Darlington pair IC
Text: CA3018, CA3018A January 1999 File Number 338.5 GeneraI Purpose Transistor Arrays Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. • Matched Monolithic General Purpose Transistors Two of the four transistors are connected in the Darlington
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CA3018,
CA3018A
CA3018
CA3018A
AN5296 Application note CA3018
AN5296 Application of the CA3018 Integrated
AN5296 Application of the CA3018
an5296
Harris CA3018
AN5296 application note
an5296 ca3018
Darlington pair IC
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Untitled
Abstract: No abstract text available
Text: O ptointerrupter S p e c ific a tio n s_ H23B1 Matched Emitter-Detector Pair G aAs Infrared Emitting Diode and NPN Photo-Darlington Amplifier M JTTER B L A C K I ; l T h e H 23B 1 is a m a tc h e d e m itte r-d e te c to r p a i r w h ic h
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H23B1
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Untitled
Abstract: No abstract text available
Text: Optointerrupter Specifications_ H23B1 Matched Emitter-Detector Pair GaAs Infrared Emitting Diode and NPN Photo-Darlington Amplifier I DETECTOR VELLOW LMrTTEP ;b l a c k > T h e H 2 3 B 1 is a m a t c h e d e m k t e r - d e t e c t o r p a i r w h ic h
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H23B1
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2SB1482
Abstract: 2SD2004 low noise transistors rf 2SD2422 2sc4040 2sd2006 2SC4137 2SB1443 2sd2010
Text: Bipolar transistors-2SA series Overall product summary Product summary—Sheet 1 of 4 Package Application V CEO * V CES FTL ATV TO-92 MRT SPT V Part no. Part no. (The ( symbol indicates a matched pair) 50 /2SA933AS '2SC1740S 120 2SC2389S Low noise Preamplifier
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/2SA933AS
2SC1740S
2SC2389S
/2SA1561A
2SC4038
2SC4037
/2SA1560
2SC4040
2SB1277
/2SB1237
2SB1482
2SD2004
low noise transistors rf
2SD2422
2sd2006
2SC4137
2SB1443
2sd2010
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NPN S2e
Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
Text: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum
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T0220
T0202
T0202
NTE263)
281MCP
NPN S2e
Darlington pair pnp
npn DARLINGTON 10A
NTE281
nte275
NTE280
DARLINGTON
darlington low power
268 darlington
darlington NPN 50 amp
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