BU323Z
Abstract: free ic 555 BU323Z-D transistor ignition circuit
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
BU323Z
BU323Z/D
free ic 555
BU323Z-D
transistor ignition circuit
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BU323Z
Abstract: No abstract text available
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
BU323Z
BU323Z/D
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BU323Z
Abstract: HIGH ENERGY IGNITION CIRCUIT darlington transistor with built-in temperature c
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is
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BU323Z
BU323Z
r14525
BU323Z/D
HIGH ENERGY IGNITION CIRCUIT
darlington transistor with built-in temperature c
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ignition coil npn power darlington
Abstract: HSOP16 TD62064 TD62064BFG TD62064BP1G
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
ignition coil npn power darlington
HSOP16
TD62064
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Untitled
Abstract: No abstract text available
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
DIP16
HSOP16
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TD62064
Abstract: HSOP16 TD62064BFG TD62064BP1G BFG DIODE
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
DIP16
HSOP16
TD62064Bled
TD62064
BFG DIODE
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BU323Z
Abstract: No abstract text available
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is
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BU323Z
BU323Z
r14525
BU323Z/D
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RBE 215 RELAY
Abstract: bu323z
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
RBE 215 RELAY
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TD62064BFG
Abstract: HSOP16 TD62064 TD62064BP1G relay 8 pin
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
HSOP16
TD62064
relay 8 pin
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Untitled
Abstract: No abstract text available
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
DIP16
HSOP16
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Untitled
Abstract: No abstract text available
Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for
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TD62064BP1G/BFG
TD62064BP1G
TD62064BFG
TD62064BFG
TD62064BP1G
DIP16
HSOP16
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Untitled
Abstract: No abstract text available
Text: DC0039/01/PC99-0.06 Die Cut PCM Schottky, SCR, Darlington Module Features Low thermal resistance Natural tack Applications Schottky, SCR, Darlington Module REACH Compliant Properties RoHS Compliant Property PC99 Unit Tolerance Test Method Colour Yellow - -
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DC0039/01/PC99-0
320-320mm
30psi
DC0039/01
DC0039/02
DC0039/03
DC0039/04
DC0039/05
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Untitled
Abstract: No abstract text available
Text: DC0039/01/PC99AL-0.10-0.1 Die Cut PCM Schottky, SCR, Darlington Module Features Low thermal resistance Natural tack Applications Schottky, SCR, Darlington Module REACH Compliant Properties RoHS Compliant Property PC99AL Unit Test Method Colour Grey - Visual
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DC0039/01/PC99AL-0
PC99AL
D5470
DC0039/01
DC0039/02
DC0039/03
DC0039/04
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Untitled
Abstract: No abstract text available
Text: DC0040/01/PC99-0.06 Die Cut PCM SCR Darlington Module Features Low thermal resistance Natural tack Applications SCR Darlington Module REACH Compliant Properties RoHS Compliant Property PC99 Unit Tolerance Test Method Colour Yellow - - Visual Thickness 0.06
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DC0040/01/PC99-0
320-320mm
30psi
DC0040/01
DC0040/02
DC0040/03
DC0040/04
DC0040/05
DC0040/06
DC0040/07
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Untitled
Abstract: No abstract text available
Text: DC0040/01/PC99AL-0.10-0.1 Die Cut PCM SCR Darlington Module Features Low thermal resistance Natural tack Applications SCR Darlington Module REACH Compliant Properties RoHS Compliant Property PC99AL Unit Test Method Colour Grey - Visual Thickness 0.10 mm ASTM D374
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DC0040/01/PC99AL-0
PC99AL
D5470
DC0040/01
DC0040/02
DC0040/03
DC0040/04
DC0040/05
DC0040/06
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BCV26
Abstract: No abstract text available
Text: BCV26 BCV26 Surface Mount Darlington Si-Epi-Planar Transistors Si-Epi-Planar Darlington-Transistoren für die Oberflächenmontage PNP PNP Version 2010-07-14 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1
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BCV26
OT-23
O-236)
UL94V-0
BCV26
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Untitled
Abstract: No abstract text available
Text: MMST6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • • • • Mechanical Data • • 40V Darlington Transistor Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Ultra-Small Surface Mount Package
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MMST6427
OT-323
J-STD-020
MIL-STD-202,
DS30166
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mpsd04
Abstract: RXTA14 mpsa14 die SSTA14
Text: □IE No. NPN Darlington TRANSISTOR DIE No. •MAXIMUM RATINGS T A=25°C Free Air Parameter D— 25 ■ DESCRIPTION EPITAXIAL PLANAR NPN SILICON TRANSISTOR (DARLINGTON) Symbol Value Unit Collector-Emitter Voltage VcEO 30 V Collector-Base Voltage VcBO 40
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MPSA14
500mW
100aA
MPS-A26
MPS-D04
mpsd04
RXTA14
mpsa14 die
SSTA14
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bt1 marking
Abstract: No abstract text available
Text: MMBTA13 / MMBTA14 MMBTA13 / MMBTA14 Surface mount Si-epitaxial Darlington Transistors Si-Epitaxial Darlington-Transistoren für die Oberflächenmontage NPN NPN Version 2005-07-13 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]
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MMBTA13
MMBTA14
MMBTA14
OT-23
O-236)
UL94V-0
bt1 marking
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Untitled
Abstract: No abstract text available
Text: MMBTA13 / MMBTA14 MMBTA13 / MMBTA14 Surface mount Si-epitaxial Darlington Transistors Si-Epitaxial Darlington-Transistoren für die Oberflächenmontage NPN NPN Version 2005-07-13 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]
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MMBTA13
MMBTA14
OT-23
O-236)
UL94V-0
MMBTA13
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transistor R2U
Abstract: SSTA63 marking B25 transistor b25
Text: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)
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OT-23)
SSTA63
100MHz
200MHz
300MHz
transistor R2U
marking B25
transistor b25
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330105
Abstract: 143-754 metelics 2598 85890 121-270 544 mmic MMA602 462501 97346 550538
Text: MMA602 Darlington HBT Die FEATURES • 100 KHz to 5 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept The MMA602 is a MMIC InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier provided in die form. The amplifier
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MMA602
MMA602
P-974279E-01
046998E-01
059359E-01
053424E-01
004735E-01
996801E-01
057717E-01
330105
143-754
metelics 2598
85890
121-270
544 mmic
462501
97346
550538
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Untitled
Abstract: No abstract text available
Text: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at
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MPS-A13
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"Die No."
Abstract: No abstract text available
Text: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 60 V (min) at
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MPS-A28
MPS-A29
"Die No."
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