trasistor
Abstract: 2SB1465 NEC RELAY nec 5
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
trasistor
NEC RELAY nec 5
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Untitled
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
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2SD1843
Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to
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2SD1843
2SD1843
diode dumper
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2SA1841
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10
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2SA1841
2SA1841
MP-10
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SGSD200
Abstract: SGSD100
Text: SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: GENERAL PURPOSE SWITCHING APPLICATION ■ GENERAL PURPOSE AMPLIFIERS
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SGSD100
SGSD200
SGSD100
O-218
SGSD200.
O-218
SGSD200
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SGSD100
Abstract: SGSD200
Text: SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: ■ GENERAL PURPOSE SWITCHING APPLICATION ■ GENERAL PURPOSE AMPLIFIERS
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SGSD100
SGSD200
SGSD100
O-218
SGSD200.
O-218
SGSD200
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MJ11022
Abstract: marking code to3 diode 1N5825 MJ11021 MJ11021G MJ11022G MSD6100 darlington power transistor mj11021
Text: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY
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MJ11021
MJ11022
MJ11022,
MJ11021/D
MJ11022
marking code to3 diode
1N5825
MJ11021G
MJ11022G
MSD6100
darlington power transistor mj11021
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MJ11021
Abstract: 1N5825 MJ11021G MJ11022 MJ11022G MSD6100 marking code to3 diode
Text: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY
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MJ11021
MJ11022
MJ11022,
O-204AA
1N5825
MJ11021G
MJ11022
MJ11022G
MSD6100
marking code to3 diode
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Untitled
Abstract: No abstract text available
Text: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY
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MJ11021
MJ11022
MJ11022,
MJ11021/D
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BDX53C
Abstract: BDX54C ST BDX53C BDX54B BDX53B st 393 JESD97
Text: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 1 ■ Audio amplifiers
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BDX53B
BDX53C
BDX54B
BDX54C
O-220
BDX53B
BDX53C
BDX54C
ST BDX53C
st 393
JESD97
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Untitled
Abstract: No abstract text available
Text: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 1 ■ Audio amplifiers
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BDX53B
BDX53C
BDX54B
BDX54C
O-220
BDX53B
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BDX53C
Abstract: BDX54C BDX53B BDX54B JESD97 ST BDX53C
Text: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 1 ■ Audio amplifiers
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BDX53B
BDX53C
BDX54B
BDX54C
O-220
BDX53B
BDX53C
BDX54C
JESD97
ST BDX53C
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BDX87C
Abstract: No abstract text available
Text: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR • ■ MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ 1 2 DESCRIPTION The BDX87C is a silicon epitaxial-base NPN
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BDX87C
BDX87C
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NEC semiconductor
Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.
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2SD2217
2SD2217
C11531E)
NEC semiconductor
transistor PT 4500
C11531E
NEC C11531E
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diode SOT-82 package
Abstract: BD336
Text: BD336 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The BD336 is a silicon epitaxial-base PNP
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BD336
BD336
OT-82
OT-82
diode SOT-82 package
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diode SOT-82 package
Abstract: BD336 darlington bd
Text: BD336 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The BD336 is a silicon epitaxial-base PNP
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BD336
BD336
OT-82
OT-82
diode SOT-82 package
darlington bd
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD336 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS
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BD336
BD336
OT-82
P032A
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Untitled
Abstract: No abstract text available
Text: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN
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BDX87C
BDX87C
P003F
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TRANSISTOR bd 147
Abstract: darlington bd
Text: Æ J SCS-THOMSON ei@ IILICT!i»OeS BD336 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS
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BD336
OT-82
TRANSISTOR bd 147
darlington bd
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MJ11021
Abstract: mj11011 MJ11017 MJ11018 MJ11019 MJ11020 MJ11022 transistor revers characteristic transistor MJ11020
Text: ÆàMOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS PNP NPN MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 .designed for use as general purpose amplifiers,low frequency switching and motor control applications. FEATURES: * High Gain Darlington Performance
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MJ11017
MJ11018
MJ11019
MJ11020
MJ11021
MJ11022
MJ11020
mj11011
MJ11018
MJ11022
transistor revers characteristic
transistor MJ11020
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D39C2
Abstract: D39C3 D38L3 D38L1 D39C1 lBX1000 D38L1-6 D38L2 D39C1-6 complementary npn-pnp power transistors
Text: Silicon Transistors Complementary Darlington 123 D38L1-6 The General Electric D38L1-6 and D39C1-6 are Silicon Planar, Epi taxial, NPN-PNP complimentary Darlington amplifiers. These devices are designed for medium current-amplifier and switching applications.
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D38L1-6
D39C1-6
D39C1-6
lBX1000
D39C2
D39C3
D38L3
D38L1
D39C1
lBX1000
D38L2
complementary npn-pnp power transistors
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IN5825
Abstract: MJF122 MSD6100 TIP122
Text: NPN MJF122 SILICON POWER DARLINGTON 6 AMPERES 100 VOLTS 30 WATTS SILICON POWER DARLINGTON FOR ISOLATED PACKAGE APPLICATION .designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically
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TIP122
E69369,
MJF122
O-254
IN5825
MJF122
MSD6100
TIP122
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDSlñíOilLiSiriRiOiDtgi B D 336 SILICON PNP POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A PP LICA TIO N S i GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS
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BD336
OT-82
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MPSA25
Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C
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BC372
BC373
BC617
BC618
MPSA25
MPSA76
MPSA26
MPSA77
MPSA27
MSD6100
MPSA25
BC517 CBE
2N6426
2N6427
MPSA12
MPSA13
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