BU323Z
Abstract: free ic 555 BU323Z-D transistor ignition circuit
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
BU323Z
BU323Z/D
free ic 555
BU323Z-D
transistor ignition circuit
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BU323Z
Abstract: No abstract text available
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
BU323Z
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BU323Z
Abstract: HIGH ENERGY IGNITION CIRCUIT darlington transistor with built-in temperature c
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is
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BU323Z
BU323Z
r14525
BU323Z/D
HIGH ENERGY IGNITION CIRCUIT
darlington transistor with built-in temperature c
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BU323Z
Abstract: No abstract text available
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is
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BU323Z
BU323Z
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BU323Z/D
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RBE 215 RELAY
Abstract: bu323z
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
RBE 215 RELAY
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2N6667
Abstract: 2N6668
Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general−purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 −80 VOLTS 65 WATTS • High DC Current Gain —
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2N6667
2N6668
2N6667
2N6668
O-220AB
2N6387,
2N6388
21A-09
O-220AB
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20000 watt schematics power amp
Abstract: 2N6667 1N5825 2N6387 2N6388 2N6668 MSD6100
Text: ON Semiconductort 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —
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2N6667
2N6668
220AB
2N6387,
2N6388
220AB
r14525
2N6667/D
20000 watt schematics power amp
2N6667
1N5825
2N6387
2N6388
2N6668
MSD6100
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D44E3
Abstract: MJD44E3
Text: ON Semiconductort MJD44E3 * Darlington Power Transistor *ON Semiconductor Preferred Device DPAK For Surface Mount Application NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS . . . for general purpose power and switching output or driver stages
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MJD44E3
D44E3
r14525
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MJD44E3
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2N6668
Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100
Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —
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2N6667
2N6668
220AB
2N6387,
2N6388
r14525
2N6667/D
2N6668
2N6667
1N5825
2N6387
2N6388
MSD6100
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D44E3
Abstract: MJD44E3
Text: ON Semiconductort MJD44E3 * Darlington Power Transistor *ON Semiconductor Preferred Device DPAK For Surface Mount Application NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS . . . for general purpose power and switching output or driver stages
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MJD44E3
D44E3
r14525
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MJD44E3
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npn 10003
Abstract: 10003 NPN
Text: PTC10002, PTC10003 Series NPN Silicon Power Darlington Transistors 10 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts Sustaining • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • • • • SPECIFICATIONS
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20fis
200mH
200/xH
npn 10003
10003 NPN
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250A darlington transistor
Abstract: 10006 TQ-204MA 10007 PTC10007
Text: Series PTC 10006, PTC 10007 NPN Silicon Power Darlington Transistors 10 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts Sustaining • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • • • • SPECIFICATIONS
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off240
20/is
-250A,
100mH
100/xH
250A darlington transistor
10006
TQ-204MA
10007
PTC10007
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driver motor stepper ULN2064
Abstract: ULN2064 hall sensor driver ULN2064B ULN2064LB ULN2065B ULN2068 A-9732
Text: Data Sheet 29305H† 2064 THRU 2069 QUAD 1.5 A DARLINGTON SWITCHES ULN2064/65B K 1 16 C C 2 15 NC B 3 14 B GND 4 13 GND GND 5 12 GND B 6 11 B C 7 10 NC K 8 9 C Dwg. No. A-9765A ABSOLUTE MAXIMUM RATINGS at +25°C Free-Air Temperature High-voltage, high-current Darlington arrays ULN2064B/LB
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ULN2064/65B
ULN2064B/LB
ULN2069B/LB
resistive50
driver motor stepper ULN2064
ULN2064
hall sensor driver
ULN2064B
ULN2064LB
ULN2065B
ULN2068
A-9732
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driver motor stepper ULN2064
Abstract: ULN2064B TYPICAL APPLICATION uln2064 ULN2068 ULN2064B ULN2064LB ULN2065B
Text: Data Sheet 29305H‡ 2064 THRU 2069 QUAD 1.5 A DARLINGTON SWITCHES ULN2064/65B K 1 16 C C 2 15 NC B 3 14 B GND 4 13 GND GND 5 12 GND B 6 11 B C 7 10 NC K 8 9 C Dwg. No. A-9765A ABSOLUTE MAXIMUM RATINGS at +25°C Free-Air Temperature High-voltage, high-current Darlington arrays ULN2064B/LB
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29305H
ULN2064/65B
ULN2064B/LB
ULN2069B/LB
driver motor stepper ULN2064
ULN2064B TYPICAL APPLICATION
uln2064
ULN2068
ULN2064B
ULN2064LB
ULN2065B
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ULN2068B
Abstract: ULN2068LB ULN2069B ULN2069LB ULN2064B ULN2064LB ULN2065B ULN2065LB 2069b GP-049
Text: 2064 THRU 2069 1.5 A DARLINGTON SWITCHES ULN2064/65B K 1 16 C C 2 15 NC B 3 14 B GND 4 13 GND GND 5 12 GND B 6 11 B C 7 10 NC K 8 9 C Dwg. No. A-9765A ABSOLUTE MAXIMUM RATINGS at +25°C Free-Air Temperature for Any One Driver unless otherwise noted High-voltage, high-current Darlington arrays ULN2064B/LB
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ULN2068B
ULN2068LB
ULN2069B
ULN2069LB
ULN2064B
ULN2064LB
ULN2065B
ULN2065LB
2069b
GP-049
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ULN2064B TYPICAL APPLICATION
Abstract: all ic datasheet in one pdf file ULN2064LB 358C A-9734A relay driver ic saturated sink driver ULN2069 ULN2064B ULN2065B ULN2065LB
Text: 2064 THRU 2069 ULN2064/65B K 1 16 C C 2 15 NC B 3 14 B GND 4 13 GND GND 5 12 GND B 6 11 B C 7 10 NC K 8 9 C Dwg. No. A-9765A ABSOLUTE MAXIMUM RATINGS at +25°C Free-Air Temperature for Any One Driver unless otherwise noted 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2064B/LB
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ULN2069B/LB
ULN2064B TYPICAL APPLICATION
all ic datasheet in one pdf file
ULN2064LB
358C
A-9734A
relay driver ic saturated sink driver
ULN2069
ULN2064B
ULN2065B
ULN2065LB
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ULN2064B TYPICAL APPLICATION
Abstract: ULN2068LB 9732-A ULN2068B ULN2069B ULN2064B ULN2064LB ULN2065B
Text: 2064 THRU 2069 ULN2064/65B K 1 16 C C 2 15 NC B 3 14 B GND 4 13 GND GND 5 12 GND B 6 11 B C 7 10 NC K 8 9 C Dwg. No. A-9765A ABSOLUTE MAXIMUM RATINGS at +25°C Free-Air Temperature for Any One Driver unless otherwise noted 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2064B/LB
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ULN2064B/LB
ULN2069B
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ULN2068LB
9732-A
ULN2068B
ULN2064B
ULN2064LB
ULN2065B
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MJ2500
Abstract: MJ2501 MJ3001 MJ3000 MJ3000/MJ3001
Text: MJ2500 MJ2501 MJ3000 MJ3001 PNP NPN SILICON COMPLEMENTARY TRANSISTORS POWER DARLINGTON 10 AMPERES, 60-80 VOLTS semicomluctc * Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 JEDEC T0-3 CASE DESCRIPTION The CENTRAL S EM ICONDUCTOR MJ2500, MJ3000 Series are mediurn - power Complementary Silicon
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MJ2500
MJ2501
MJ3000
MJ3001
MJ2500,
MJ2501
MJ3000/MJ3001
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PTC10003
Abstract: AX670 ptc10002
Text: "6ÎT595Ô MI CROS EMI 02E CORP/POWER -^ l TECHNOLOGY 00440 D T - 3 3 ' l c? r P T C 10002P 11s DJLDD0144D7 PTC 10003P Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 10 AMPERES 400 VOLTS era 1. BASE 2. COLLECTOR 3. EMITTER r - H i c F
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10002P
10003P
O-247
O-247
PTC10002P
50//s
PTC10003
AX670
ptc10002
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2N6650 JANTX equivalent
Abstract: No abstract text available
Text: 2N6648 – 2N6650 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/527 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at -10 amps and is military qualified up to the JANTXV
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2N6648
2N6650
MIL-PRF-19500/527
O-204AA
O-204AA
2N6648
T4-LDS-0317,
2N6650 JANTX equivalent
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Untitled
Abstract: No abstract text available
Text: 2N6383 – 2N6385 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/523 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 10 amps and is military qualified up to the JANTXV
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2N6383
2N6385
MIL-PRF-19500/523
O-204AA
O-204AA
2N6383
MIL-PRF-19500/523.
T4-LDS-0316,
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D40K2
Abstract: d40k1 D40K D40K3 D41K
Text: VERY HIGH GAIN D40K Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS 2 AMP, 10 WATTS COMPLEMENTARY TO THE D41K SERIES Applications: • • • • • • • • • NPN COLLECTOR Driver Regulator Touch Switch I.C. Driver Capacitor Multiplier Audio Output
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T0-202
O-202
D40K1
D40K2
300ms
D40K
D40K3
D41K
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GE10001
Abstract: GE10000 GE10009 10-009 GE10007 GE10002 GE10003 GE10004 GE10008 GEI0004
Text: HIGH SPEED GE10000GE10009 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 10-20 AMPS, 175 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, A C & DC motor control, UPS systems, ultrasonic equipm ent and
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GE10000-GE10009
GE10000
GE10003
GEI0004
GEI0009
T0-204AA
GE10001
GE10009
10-009
GE10007
GE10002
GE10004
GE10008
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GE6251
Abstract: GE6253 IR LF 0038 GE6252
Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS G E 6 2 5 1 ,2 ,3 450-55C VOLTS 10 AMP, 125 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultrasonic equipment and
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GE6251
450-55C
T0-204AA
GE6252
GE62ISTICS
GE625I
GE6253
IR LF 0038
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