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    DARLINGTON -5A 100V PNP Search Results

    DARLINGTON -5A 100V PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    UHD532/883 Rochester Electronics LLC UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) Visit Rochester Electronics LLC Buy
    PS2502L-1-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation

    DARLINGTON -5A 100V PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation


    Original     		PDF FMMT634 900mA 625mW FMMT734 AEC-Q101 J-STD-020 DS33115

    FMMT634Q

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current


    Original     		PDF FMMT634 900mA 625mW FMMT734 AEC-Q101 DS33115 FMMT634Q

    ja smd

    Abstract: CZT127 KZT127
    Text: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2


    Original     		PDF KZT127 CZT127) OT-223 -30mA -20mA ja smd CZT127 KZT127

    IB 100MA NPN

    Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
    Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃


    Original     		PDF HBDW94C O-220 -100V -100V, -20mA -100mA IB 100MA NPN HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A

    DARLINGTON 3A 100V npn

    Abstract: hfe 2500 NTE264
    Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


    Original     		PDF NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264

    NTE270

    Abstract: No abstract text available
    Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


    Original     		PDF NTE270 NTE271 NTE270

    NTE247

    Abstract: nte248
    Text: NTE247 NPN & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.


    Original     		PDF NTE247 NTE248 100mA NTE247 nte248

    HP147T

    Abstract: No abstract text available
    Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147T █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original     		PDF HP147T O-220 -100V -100V, -40mA -10mA -20mA HP147T

    NTE262

    Abstract: NTE261 DARLINGTON 3A 100V npn
    Text: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


    Original     		PDF NTE261 NTE262 100mA NTE262 NTE261 DARLINGTON 3A 100V npn

    HP147TS

    Abstract: No abstract text available
    Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147TS █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original     		PDF HP147TS O-220 -100V -100V, -40mA -10mA -20mA HP147TS

    HP147TSW

    Abstract: No abstract text available
    Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147TSW █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-263 T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃


    Original     		PDF HP147TSW O-263 -100V -10mA -40mA -100V, -20mA HP147TSW

    TIP127 Application Note

    Abstract: TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A


    Original     		PDF -100V TIP122 -20mA -100V, TIP127 TIP127 Application Note TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington

    Untitled

    Abstract: No abstract text available
    Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit


    Original     		PDF TIP145T/146T/147T TIP140T/141T/142T O-220 TIP145T TIP146T TIP147T TIP145T/146T/147T

    147T

    Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
    Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit


    Original     		PDF TIP145T/146T/147T TIP140T/141T/142T O-220 TIP145T TIP146T TIP147T TIP145T/146T/147T 147T TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T

    CJF6388

    Abstract: CJF6668
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF CJF6668 O-220FP CJF6388 C-120 CJF6668Rev CJF6388 CJF6668

    CJF6388

    Abstract: CJF6668
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF ISO/TS16949 CJF6668 O-220FP CJF6388 C-120 CJF6668Rev CJF6388 CJF6668

    Untitled

    Abstract: No abstract text available
    Text: roaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TIP147T DESCRIPTION • High DC Current Gain: h FE = 1000(Min)@ IC=-5A • Collector-Emitter Sustaining Voltage-


    Original     		PDF TIP147T -100V TIP142T O-220C -40mA -100V,

    120v 10a transistor

    Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A


    Original     		PDF -120V 2SD1126 -10mA -120V, -100V, 120v 10a transistor DARLINGTON -5A 100v pnp 2SB955 2SD1126

    TIP145

    Abstract: Tip147 PNP Darlington 100V 10A TIP147 TIP146 tip147 data sheet
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and


    Original     		PDF TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147 CycleE20% TIP145 Tip147 PNP Darlington 100V 10A TIP147 TIP146 tip147 data sheet

    Untitled

    Abstract: No abstract text available
    Text: <-$£.tni-ConaiLekoi Lpioaueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP147 Silicon PNP Darlington Power Transistor DESCRIPTION 1 • High DC Current Gain: h FE = 1000(Min)@lc=-5A


    Original     		PDF TIP147 -100V -40mA -100V, --30V,

    TIP145F

    Abstract: TIP146F TIP147F 147F
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TIP145F/146F/147F TIP140F/141F/142F TIP145F TIP146F TIP147F TIP145F TIP146F TIP147F 147F

    ic 3A hfe 500

    Abstract: IC 3A 2SB601
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A


    Original     		PDF -100V -100V, ic 3A hfe 500 IC 3A 2SB601

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


    OCR Scan     		PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE T O -2 2 0 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cB O -1 0 0 Collector-Emitter Voltage


    OCR Scan     		PDF KSB601 KSD560 350uS,