prtr5v0u6s
Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years
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2002/95/EC.
PMBTA42
PMEG3005EL
PMEG6010EP
PMR780SN
PTVS12VS1UR
PZU13y
PMBTA42DS
PMEG3005ET
PMEG6010ER
prtr5v0u6s
csp1040
TSSOP20 FOOTPRINT
ip4065cx11
smd transistor GY sot89
IP4065CX11/LF
BV 9y transistor smd
IP4058CX8/LF
IP4280CZ10
smd transistor GY
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E113898
Abstract: LTV-725F LTV-725FM LTV-725FS LTV-725FS-TA1 725f
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High collector-emitter voltage VCEO : 300V * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current
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000Vrms
LTV-725F
LTV-725FM
LTV-725FS
LTV-725FS-TA1
E113898
R9653630
CA91533-1
P99102464
E113898
LTV-725F
LTV-725FM
LTV-725FS
LTV-725FS-TA1
725f
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E113898
Abstract: LTV-724F LTV-724FM LTV-724FS R9653630
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High isolation voltage between input and output * High input current IF : MAX. 150 mA * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio ( CTR : 20% ~ 80% at IF = 100mA, VCE = 2V )
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100mA,
000Vrms
LTV-724F
LTV-724FM
LTV-724FS
LTV-724FS-TA1
E113898
R9653630
CA91533-1
P9810lector-emitter
E113898
LTV-724F
LTV-724FM
LTV-724FS
R9653630
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IMD2
Abstract: NDL5481PD NDL5481P1D NDL5481P2 NDL5481P2C NDL5481P2D NDL5481PC NDL5481P NDL5481P1 NDL5481P1C
Text: 1300 nm OPTICAL ANALOG CATV SYSTEM φ80 µm InGaAs PIN PHOTO DIODE WITH SMF NDL5481P SERIES FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 0.1 nA The NDL5481P Series is an InGaAs PIN photo diode module with single mode fiber. It is designed for analog transmission
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NDL5481P
NDL5481P
SM-9/125
24-Hour
IMD2
NDL5481PD
NDL5481P1D
NDL5481P2
NDL5481P2C
NDL5481P2D
NDL5481PC
NDL5481P1
NDL5481P1C
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G150
Abstract: OD-8451N OD-S524
Text: SMT-InGaAs PIN MODULE OD-8451N FEATURES OUTLINE DIMENSIONS Units in mm • SURFACE MOUNTABLE BY I.R. REFLOW SOLDER OD-8451N • SMALL SIZE FLAT CERAMIC PACKAGE: 7.6 x 12.7 x 3 mm 12.7±0.2 7.62±0.2 9.62 • SMALL DARK CURRENT: ID = 0.1 nA • WIDE OPERATING TEMPERATURE RANGE:
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OD-8451N
OD-8451N
24-Hour
G150
OD-S524
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ICX024BL
Abstract: icx024 SUN POSITION SENSOR CM500S ICX083AL
Text: ICX083AL Diagonal 11mm Type 2/3 CCD Image Sensor for CCIR Black-and-White Video Cameras Description The ICX083AL is an interline CCD solid-state image sensor suitable for CCIR black-and-white video cameras with a diagonal 11mm (Type 2/3) system. High sensitivity and low dark current are achieved
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ICX083AL
ICX083AL
ICX024BL)
20pin
800mil)
ICX024BL
icx024
SUN POSITION SENSOR
CM500S
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Untitled
Abstract: No abstract text available
Text: Image Correction ICs Image Correction IC for Camera No.10060ECT01 BU1571KN ●Description BU1571KN is AIE : Adaptive Image Enhancer image processing technology by ROHM’s hardware . Provides unprecedented visibility under severe conditions, such as darkness or extreme backlighting.
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10060ECT01
BU1571KN
BU1571KN
R1010A
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Untitled
Abstract: No abstract text available
Text: LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only FEATURES * HIGH PHOTO SENSITIVITY * SUITABLE FOR INFRARED RADIATION * LOW JUNCTION CAPACITANCE REV.B JUL 2012 * HIGH CUT-OFF FREQUENCY * FAST SWITCHING TIME * THE LTR-526AB IS A SPECIAL DARK BLUE PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT
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LTR-526AB
BNS-OD-C131/A4
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SMD ic 814 8pin
Abstract: LTV-814M LTV824 PC 814 photocoupler ltv844 LTV844S SMD ic 814 4pin 8pin ic 814 844s LTV814M-V
Text: AC Input Type Photocoupler LTV-814 Series AC input response High input-output isolation voltage: VISO : 5,000Vrms Low collector dark current (ICEO : MAX. 10-7A at VCE=20V) Current transfer ratio (CTR : MIN. 20% at IF= 1mA, VCE=5V) Compact dual-in-line package
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LTV-814
000Vrms)
LTV-814
LTV-824
LTV-844
E113898)
R9653630)
CA91533-1)
P96103013)
DC500V,
SMD ic 814 8pin
LTV-814M
LTV824
PC 814 photocoupler
ltv844
LTV844S
SMD ic 814 4pin
8pin ic 814
844s
LTV814M-V
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VCSEL die bonding
Abstract: SATURN PY-CM11
Text: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.
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1300/1550nm
PY-CM11
1310nm
460X460
PY-CM11
VCSEL die bonding
SATURN
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Untitled
Abstract: No abstract text available
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * Directly connectable to TTL * High collector-emitter voltage VCEO = 70V * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * High input-output isolation voltage ( Viso = 5,000Vrms )
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000Vrms
LTV-703F
LTV-703FM
LTV-703FS
LTV-703FS-TA1
E113898
R9653630
CA91533-1
P96103013
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LTR516AB
Abstract: LTR516
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES * HIGH PHOTO SENSITIVITY * SUITABLE FOR INFRARED RADIATION * LOW JUNCTION CAPACITANCE REV.C JUL 2012 * HIGH CUT-OFF FREQUENCY * FAST SWITCHING TIME * THE LTR-516AB IS A SPECIAL DARK BLUE PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT
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LTR-516AB
BNS-OD-C131/A4
LTR516AB
LTR516
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN Photodiode R-11-XXX-G-A B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm
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R-11-XXX-G-A
R-11-040-G-A
LUMNDS008-OCT1504
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TSL1301
Abstract: No abstract text available
Text: TSL1301 102 x 1 LINEAR SENSOR ARRAY WITH HOLD SOES031A – NOVEMBER 1996 – REVISED MAY 1997 D D D D D 102 × 1 Sensor-Element Organization 300 Dots-Per-Inch DPI Sensor Pitch High Sensitivity Output Referenced to Ground Excellent High-Temperature Dark Signal
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TSL1301
SOES031A
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TCD1300D
Abstract: No abstract text available
Text: TOSHIBA TCD1300D TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1 3 0 0 D The TCD1300D is a high sensitive and low dark current 3648-elements linear image sensor. The sensor can be used for facsimile, imagescanner and OCR. The signal pre processing circuit which is composed of Sample and Hold
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TCD1300D
TCD1300D
3648-elements
400DPI)
WDIP22-G-400-2
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TCD1200D
Abstract: TCD1200 TCD-12
Text: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution
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TCD1200D
TCD1200D
TCD1200
TCD-12
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TC74HC04P
Abstract: TCD141C TCD141 2SC1815
Text: TCD141 ARC TENTATIVE TCD141C is a high sensitive and low dark current 5000-element image sensor. The sensor can be used for Facsimile. Imagescanner and OCR. The device contain a row of 5000 potodiodes, which provide a 16 lines/mm (400 DPI) across a A3 size paper.
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TCD141
TCD141C
5000-element
TC74HC04P
2SC1815
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TCD1702C
Abstract: ccd linear toshiba
Text: TO SHIBA _ TCD1702C TENTATIVE TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1702C The TCD1702C is a high sensitive and low dark current 7500 elements CCD image sensor. The sensor is designed for facsimile, imagescanner and
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TCD1702C
TCD1702C
600DPI)
22pin
ccd linear toshiba
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Untitled
Abstract: No abstract text available
Text: DATE BY REVISIONS A P P ’D X3N01IS f- NO. 0.200 3NI ANODE TRACKS 32 PLCS OPTOELECTRONIC CHARACTERISTICS (T=25°C) 3.19 Short Circuit Current 500 FC* ÏSC 0.6 mA Open Circuit Voltage 500 FC* V0C 0.45 V Reverse Dark Current -5.0 V 0.5 pk 20. V 0.4 nF EIGHT ELEMENT
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NSL-6200
U55SE0
X3N01IS
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Untitled
Abstract: No abstract text available
Text: REV 1 0 E S C R 1 P T IO N N5L 3510/2 RESISTANCE @ 2 FTC I 7•S E P •92 ♦3 MIN. TYP. MAX. UNITS 4. 35 6.5 8.64 KOHMS RESISTANCE OHMS DARK RESISTANCE 5 SEC DARK PK SPECTRAL RESPONSE 43 nm VOLTAGE RATING 100 VOLTS «1 PWR DISSIPATION 125 mw *2 +75 “C
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AUG-92
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Untitled
Abstract: No abstract text available
Text: I DESCRIPTION R EV 4.45 -&» \ APPVL 0/. 3.94 . 165 -e S N S L - 19M53B ö - - . 14 0 3.81 \ 3 . 30 : t MIN. . 0 5 5 I 1 .78 \ 1.14) RESISTANCE 0 10 LUX TYP. MAX. I8K 6K OHMS RESISTANCE 1 . 5 I— I 3 8 . I ) NOM . 100 U N ITS OHMS DARK RESISTANCE 5 SEC DARK
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19M53B
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quad photodiode
Abstract: Photodiode
Text: T DATE NO. REVISIO N S 1 BY APP’D OPTOELECTRONIC CHARACTERISTICS ( T = 25 °C PARAMETER TEST CONDITION Peak Responsivity Spectral Range = 900 nm 0.05 A/W SYMBOL TYPICAL UNIT Rp 0.5 A/W A 0.4-1.1 Response Uniformity ±5 % Dark Current -5.0 V XD 1.0 nA
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transistor SMD p05
Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
transistor SMD p05
1981-R
TRANSISTOR SMD 2X y
127 D TRANSISTOR
476 16q
CP QUICK CONNECT
L-398
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 212 Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im
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A235bOS
0057bDÃ
fl23SbOS
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