Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    D959 TRANSISTOR Search Results

    D959 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D959 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 01 — 11 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN

    D959

    Abstract: d956 MS-013 SO20 FET E 102
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN D959 d956 MS-013 SO20 FET E 102

    D959 transistor

    Abstract: No abstract text available
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 02 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN D959 transistor

    Untitled

    Abstract: No abstract text available
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN

    HX8238

    Abstract: HX8238-D
    Text: DOC No. HX8238-D-DS HX8238-D 960 x 240 TFT LCD Single Chip Digital Driver Preliminary version 01 November, 2007 Himax Confidential This information contained herein is the exclusive property of Himax and shall not be distributed, reproduced, or disclosed


    Original     		PDF HX8238-D-DS HX8238-D G0-G239 70November, 71November, HX8238 HX8238-D