RJ113BZ
Abstract: fb0805 WIZ830MJ w5300 120R-100MHZ 0.1uF RD 1V RJ113 OSC25I A3A1
Text: 5 4 3V3A 1V8A 3.3V 3 2 1 1V8D 1V8D 3.3V 3.3V 1V8A 3V3A FB2 66 /RESET BIT16EN 18 BIT16EN D 15 D 14 D 13 D 12 D 11 D 10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 28 29 30 31 32 33 34 35 38 39 40 41 42 43 44 45 DATA15 DATA14 DATA13 DATA12 DATA11 DATA10 DATA9 DATA8 DATA7
|
Original
|
PDF
|
BIT16EN
DATA15
DATA14
DATA13
DATA12
DATA11
DATA10
WIZ830MJ
RJ113BZ
fb0805
WIZ830MJ
w5300
120R-100MHZ
0.1uF
RD 1V
RJ113
OSC25I
A3A1
|
"digital phase shifter"
Abstract: 160 e7 mmic e3 mmic s5 MAPCGM0004-DIE P180 macom phase shifter
Text: RO-P-DS-3051 - - MAPCGM0004-DIE 5-Bit Digital Phase Shifter 6.0-18.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 6.0-18.0 GHz GaAs MMIC Phase 5 Bit Digital Phase Shifter 6.0 -18.0 GHz Operation 360º Coverage, LSB = 11.2º TTL Control Inputs Self-Aligned MSAG MESFET Process
|
Original
|
PDF
|
RO-P-DS-3051
MAPCGM0004-DIE
MAPCGM0004-Die
"digital phase shifter"
160 e7
mmic e3
mmic s5
P180
macom
phase shifter
|
Untitled
Abstract: No abstract text available
Text: TC32168FTG TC32168FTG Single-Chip 5.8 GHz RF Transceiver for China’s ETC of Automotive Ver. 1.0.1 1 2014-06-16 TC32168FTG Table of contents 1. ABSTRACT . 4
|
Original
|
PDF
|
TC32168FTG
|
Untitled
Abstract: No abstract text available
Text: A?E ,=-'475 4VVS<>AB< # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY . !0 V &CIG>CH>8;6HI G: 8 DK: GN 7D9N 9>D9: V "MIG: B : AN ADL G: K: GH: G: 8 DK: GN 8 =6G<: 1?B 6M 0/* O , =L#`_$&^Ri *(-* " = +-(. 9 V 2 AIG6 ADL <6I: 8 =6G<: I@'MH,.1 V "MIG: B : 94 )U
|
Original
|
PDF
|
009-134-A
O-247
PG-TO247-3
O-247,
|
G994
Abstract: No abstract text available
Text: A?E'.=-'475 4VVS<>AB< # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY V &CIG>CH>8;6HI G: 8 DK: GN 7D9N 9>D9: V "MIG: B : AN ADL G: K: GH: G: 8 DK: GN 8 =6G<: . =L 1 [^Ri 0/* O , =L#`_$&^Ri * 1 " = 0(0 9 V 2 AIG6 ADL <6I: 8 =6G<: V "MIG: B : 94 )U )U3 G6I: 9
|
Original
|
PDF
|
009-134-A
O-247
PG-TO247-3
O-247,
G994
|
G99F
Abstract: adk9
Text: 9?3-'@ ,'4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L U )DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh /.) + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: O )'+.) " * X%dia +/ _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U . I6A
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 9?9-'@ ,'4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L U )DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: /.) 1? X O )'+.) " * X%dia +/ _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A
|
Original
|
PDF
|
|
cdx 2c
Abstract: No abstract text available
Text: 9?9-'@ ,4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 U )DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh /.) + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: O )'*+. " * X%dia ., _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U . I6A
|
Original
|
PDF
|
|
D992
Abstract: QJE6
Text: 9?9-'@ ,'4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L U )DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: /.) 1? X O )'+.) " * X%dia +/ _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 9?5-'@, '4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 U )DK: GH;><IF: D; B : F>H/ HG L . X 1 [%^Rh + !0 DC B U 2 AHF6 ADK <6H : 8 =6F<: 6L /.) 1 ? X O )'.+) " * X%dia +- _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 9?3-'@ ,'4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L U )DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh /.) + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: O )'+.) " * X%dia +/ _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U . I6A
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 9?9-'@ 004? 4VVS=>Aa # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 U DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh /.) + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: O )'*22 " * X%dia ,B _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U . I6A
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 9?5-'@-''4? 4VVS=>Aa # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 U DK: GH;><IF: D; B : F>H/ HG L . X 1 [%^Rh + !0 DC B U 2 AHF6 ADK <6H : 8 =6F<: 6L 1[ X * X%dia /.) O )'/ " +* _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A
|
Original
|
PDF
|
|
30 DF 9K
Abstract: CEIH
Text: 9?5-'@-''4? 4VVS=>Aa # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 U DK: GH;><IF: D; B : F>H/ HG L . X 1 [%^Rh + !0 DC B U 2 AHF6 ADK <6H : 8 =6F<: 6L 1[ X * X%dia /.) O )'/ " +* _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A
|
Original
|
PDF
|
|
|
|
Untitled
Abstract: No abstract text available
Text: 9?9-'@ -,4? 4VVS=>Aa # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L U DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh /.) )'*/. W + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: O * X%dia ,2 _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U . I6A
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 9?5-'@, '4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 U )DK: GH;><IF: D; B : F>H/ HG L . X 1 [%^Rh + !0 DC B U 2 AHF6 ADK <6H : 8 =6F<: 6L /.) 1 ? X O )'.+) " * X%dia +- _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 9?9-'@-''4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 U DK: GH;><IF: D; B : F>H/ HG L . X 1 [%^Rh + !0 DC B U 2 AHF6 ADK <6H : 8 =6F<: 6L 1[ X * X%dia /.) O )'/ " +* _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8
|
Original
|
PDF
|
|
transistor 6c9
Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A
|
Original
|
PDF
|
IPI50R350CP
696EH
transistor 6c9
transistor marking 6c9
102 6f
dk transistor
6H MARKING diode
D9 DG transistor
marking 6H
|
Untitled
Abstract: No abstract text available
Text: 9?9-'@ 004? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L U )DK: GH;><IF: D; B : F>H/ HGhJX 1 [%^Rh /.) + =L"`_#%^Rh U 2 AHF6 ADK <6H : 8 =6F<: O )'+22 " * X%dia + _< U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U . I6A
|
Original
|
PDF
|
|
EV10AS150
Abstract: diode t25 4 A8 EBGA317 EV10AS150TP-EB EVX10AS150TP 10 GSPS ADC FR4 diode t25 4 A9
Text: EV10AS150 High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 4.5 GHz Full Power Bandwidth Datasheet Summary Main Features • ADC 10-bit Resolution • Up to 2.5 Gsps Sampling Rate • Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs Performance • Single Tone Performance in 1st Nyquist –1 dBFS
|
Original
|
PDF
|
EV10AS150
10-bit
0954BS
EV10AS150
diode t25 4 A8
EBGA317
EV10AS150TP-EB
EVX10AS150TP
10 GSPS ADC FR4
diode t25 4 A9
|
DIODE g8
Abstract: No abstract text available
Text: TS81102G0 DMUX 8/10-bit 1.5 GHz 1:4/8 Datasheet Features • Programmable DMUX Ratio: • • • • • • • • • • • • • • – 1:4: Data Rate Max = 750 Msps – PD 8b/10b < 4.3/4.7 W (ECL 50Ω Output) – 1:8: Data Rate Max = 1.5 Gsps
|
Original
|
PDF
|
TS81102G0
8/10-bit
8b/10b)
TS8388B
TS83102G0B
8-/10-bit
1016E
DIODE g8
|
CPI100
Abstract: No abstract text available
Text: DATA SHEET NEC BiCMOS INTEGRATED CIRCUIT _ A1PD3150GS 1 150 MHz/200 MHz DUAL PLL FREQUENCY SYNTHESIZER LSI FOR ANALOG CELLULAR PHONE DESCRIPTION ¿¡PD3150GS is a PLL frequency synthesizer LSI for analog cellular phone. This LSI Is manufactured using 13 GHz
|
OCR Scan
|
PDF
|
A1PD3150GS
Hz/200
PD3150GS
C10535E)
CPI100
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC BiCMOS INTEGRATED CIRCUIT _¿ ¿ P D 3150GS 1 150 MHz/200 MHz DUAL PLL FREQUENCY SYNTHESIZER LSI FOR ANALOG CELLULAR PHONE DESCRIPTION ¿¿PD3150GS is a PLL frequency synthesizer LSI for analog cellular phone. This LSI is manufactured using 13 GHz
|
OCR Scan
|
PDF
|
3150G
Hz/200
uPD3150GS
|
Untitled
Abstract: No abstract text available
Text: SÌ4133W SILICON L A BOR A TORI E S D u a l - B a n d R F S y n t h e s i z e r W i t h I n t e g r a t e d VC Os F or W -C D M A C om m unications Features • Dual-Band RF Synthesizers • RF1: 2.3 G Hz to 2.5 GHz • RF2: 750 MHz to 1.65 GHz ■ IF Synthesizer
|
OCR Scan
|
PDF
|
28-Pin
|