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    D882G TRANSISTOR Search Results

    D882G TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D882G TRANSISTOR Datasheets Context Search

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    D882Y

    Abstract: D882G D882-y D882g transistor D882R D882O KSD882YSTU KSD882GSTU KSB772 KSD882
    Text: KSD882 NPN Epitaxial Silicon Transistor Recommended Applications • Audio Frequency Power Amplifier Featuers • Low Speed Switcing • Complement to KSB772. TO-126 1 1. Emitter Absolute Maximum Ratings* Symbol 2.Collector 3.Base Ta = 25°C unless otherwise noted


    Original     		PDF KSD882 KSB772. O-126 KSD882 D882Y D882G D882-y D882g transistor D882R D882O KSD882YSTU KSD882GSTU KSB772