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    D882G TRANSISTOR Search Results

    D882G TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    D882G TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D882Y

    Abstract: D882G D882-y D882g transistor D882R D882O KSD882YSTU KSD882GSTU KSB772 KSD882
    Text: KSD882 NPN Epitaxial Silicon Transistor Recommended Applications • Audio Frequency Power Amplifier Featuers • Low Speed Switcing • Complement to KSB772. TO-126 1 1. Emitter Absolute Maximum Ratings* Symbol 2.Collector 3.Base Ta = 25°C unless otherwise noted


    Original     		KSD882 KSB772. O-126 KSD882 D882Y D882G D882-y D882g transistor D882R D882O KSD882YSTU KSD882GSTU KSB772 PDF