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    D882 POWER TRANSISTOR Search Results

    D882 POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    D882 POWER TRANSISTOR Datasheets Context Search

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    D882 TRANSISTOR

    Abstract: D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 D882 to 92 D882 TO-92 d882 npn transistor transistor D882 datasheet D882 -TO-92
    Text: D882 D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current ICM: 3 A Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 100mA 10MHz D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 D882 to 92 D882 TO-92 d882 npn transistor transistor D882 datasheet D882 -TO-92

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO


    Original     		PDF -89-3L OT-89-3L 100mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


    Original     		PDF O-251 O-251 10MHz

    TRANSISTOR D882

    Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-251 O-251 10MHz TRANSISTOR D882 D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor

    d882 to-92

    Abstract: D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF 100mA 10MHz d882 to-92 D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882

    D882 TRANSISTOR

    Abstract: D882 TRANSISTOR D882 br d882 transistor D882 datasheet d882 npn transistor TRANSISTOR br D882 D882 datasheet d882 equivalent datasheet d882
    Text: D882 0. 5 1¡ À 0 . 03 5¡ ã 5. 50¡ 0 À. 10 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 6. 5 0¡ À 0. 10 TO-251 TO-252-2 FEATURES 5¡ ã 5¡ ã 7. 70 0. 80¡ À 0. 0 5 0. 6 0¡ À 0. 0 5 1. Power dissipation 2. 3 0¡ À 0. 05 2. 3 0¡ À


    Original     		PDF O-251 O-252-2 100mA 10MHz D882 TRANSISTOR D882 TRANSISTOR D882 br d882 transistor D882 datasheet d882 npn transistor TRANSISTOR br D882 D882 datasheet d882 equivalent datasheet d882

    D882 TRANSISTOR

    Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF OT-89 100mA 10MHz D882 TRANSISTOR D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40


    Original     		PDF O-126 O-126 100mA 10MHz

    d882 to-92

    Abstract: TRANSISTOR br D882 d882 y
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 100mA 10MHz d882 to-92 TRANSISTOR br D882 d882 y

    D882 TRANSISTOR

    Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-126 O-126 10MHz D882 TRANSISTOR transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882

    D882 TRANSISTOR

    Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-252 O-252 10MHz D882 TRANSISTOR d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


    Original     		PDF O-126 O-126 10MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage


    Original     		PDF OT-89 OT-89 100mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM : 1. EMITTER 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF O-126 O-126 100mA 10MHz

    D882 TRANSISTOR

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range


    Original     		PDF 100mA 10MHz D882 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 Transistors SOT-89 TRANSISTOR（ NPN ） 1. BASE FEATURES Power dissipation PCM : 0.75 2. COLLECTOR 1 2 W（Tamb=25℃） 3. EMITTER 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-89 100mA 10MHz

    D882 TRANSISTOR

    Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range


    Original     		PDF O-126 O--126 Coll00 290TYP 090TYP D882 TRANSISTOR transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400

    D882

    Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range


    Original     		PDF O-251 O--251 25WTamb Co200 091TYP 300TYP D882 transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882

    sot 89 D882

    Abstract: h D882 transistor D882 TRANSISTOR D882 sot-89 sot-89 d882 d882 092 transistor D882 p
    Text: WILLAS FM120-M+ D882 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OT-89 OD-123+ FM120-M+ FM1200-M OD-123H 060TYP 118TYP FM120-MH FM130-MH FM140-MH sot 89 D882 h D882 transistor D882 TRANSISTOR D882 sot-89 sot-89 d882 d882 092 transistor D882 p

    TRANSISTOR br D882

    Abstract: D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882
    Text: D882 NPN TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3．BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage


    Original     		PDF O-251 O-251 10MHz TRANSISTOR br D882 D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882

    d882

    Abstract: TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor
    Text: D882 NPN TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 2. COLLECTOR 3.200 10.60 0 11.00 0 3. BASE 3 0.000 0.300 2 Features — 1 2.100 2.300 Power dissipation 1.170 1.370 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-126 O-126 10MHz d882 TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor

    D882 sot

    Abstract: D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882
    Text: D882 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 Features — B 2.6 4.25 2.4 3.75 0.8 MIN Power dissipation 0.44 0.37 0.13 B MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)


    Original     		PDF OT-89 OT-89 100mA 10MHz D882 sot D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882

    TRANSISTOR D882 input

    Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
    Text: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25


    Original     		PDF OT-89 OT-89 TRANSISTOR D882 input D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet

    D882 TRANSISTOR PIN

    Abstract: D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A


    Original     		PDF BTD882I3 C848I3-H BTB772I3 O-251 Pw350s UL94V-0 D882 TRANSISTOR PIN D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet