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    D843 TRANSISTOR Search Results

    D843 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D843 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D843 transistor

    Abstract: AD843
    Text: 34 MHz, CBFET Fast Settling OpAmp ANALOG DEVICES BALANCE ^ -IN P U T ^ + IN P U T -v .[T # AD843 iS, TO P V IEW ~B~] B A L A N C E ~7~| + V S T ] O U TP U T ~5~| NC NC = N O C O N N E C T « NC TO P VIEW g OFFSET TO-8 H Package N U LL LCC (E) Package - NC


    OCR Scan     		AD843 AD843K/B) AD847 650ns 125Hz D843 transistor AD843 PDF

    J 3305

    Abstract: BD839 BD843 BD840 BD841 BD842 BD844 IEC134
    Text: BD839 BD841 BD843 PHILIPS I N T E RNATIONAL SbE J> • 7110fl2b 0043020 273 HiPHIN T-33 -OS' SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T 0 -2 0 2 envelope, recommended fo r use in television circuits and audio applications.


    OCR Scan     		BD839 BD841 BD843 7110fl2b T-3Z-05- T0-202 BD840, BD842 BD844. BD839 J 3305 BD843 BD840 BD841 BD844 IEC134 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES 16-Bit High Speed Current-Output DAC DAC16 FEATURES ±1 LSB Differential Linearity max Guaranteed M onotonic Over Tem perature Range ± 2 LSB Integral Linearity (max) 500 ns Settling Tim e 5 m A Full-Scale O utput TTL/CM O S Com patible Low Power: 190 mW (typ)


    OCR Scan     		16-Bit DAC16 synthes14 PDF

    D843 transistor

    Abstract: C11x 001135N AC16D
    Text: 16-Bit High Speed Current-Output DAC DAC16 ANALOG DEVICES FUNCTIONAL BLOCK DIAGRAM FEATURES ±1 LSB Differential Linearity max G uaranteed M onotonic Over Tem perature Range ± 2 LSB Integral Linearity (max) 500 ns S ettling Tim e 5 mA Full-Scale O utput


    OCR Scan     		16-Bit DAC16 24-Pin D-24A 28-Pin E-28A D843 transistor C11x 001135N AC16D PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF