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Text: •H Y U N D A I HY62VB4DD Series 5 1 Z K N B - b il C M O S 5R A M PREUMINAHY DESCRIPTION TVib HYSZV8400 is a high-speBd, law power and 524,ZBfl x B-bits CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS pro c b s s technology. The HY52VB400 has a data retention m ode that guarantees
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HY62VB4DD
HYSZV8400
HY52VB400
HY62VB400
J/12U/150/200ns
040fl4)
Z54fl|
DSD41
D7B51
1DED3-11-MAYM
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d2311
Abstract: D5555
Text: ’H Y U N D A I ” Y HY52B4 DD-I Series 1 51 ZK x B-bit CM DS SRAM PRELIM INARY DESDHIPTION The HYB2B400-I is a high-speed, low pow er and 524,288 x B-bits CMOS static RAM Fabricated using Hyundai's high perform ance twin tub CMOS process technology. This high reliability process cuuplad with innovative circuit
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HY52B4
HYB2B400-I
HY52B40D-I
HY62B40D-I
tem064
45dBfl
D42541
D7B51
1DED2-11-MAYB4
HY62B400-I
d2311
D5555
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