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    D786 TRANSISTOR Search Results

    D786 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    D786 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d789

    Abstract: d789 transistor d787 D786 transistor BUK9C07-65BIT
    Text: BUK9C07-65BIT N-channel TrenchPLUS logic level FET Rev. 01 — 31 May 2010 Preliminary data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low


    Original     		BUK9C07-65BIT OT427. AEC-Q101 d789 d789 transistor d787 D786 transistor BUK9C07-65BIT PDF

    BUK9C07-65BIT

    Abstract: No abstract text available
    Text: BUK9C07-65BIT N-channel TrenchPLUS logic level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low


    Original     		BUK9C07-65BIT OT427. AEC-Q101 BUK9C07-65BIT PDF

    d789 transistor

    Abstract: equivalent transistor D789 d789 D786 equivalent transistor D786 transistor D789 d787 D786 transistor D781 d782
    Text: BUK9C07-65BIT N-channel TrenchPLUS logic level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low


    Original     		BUK9C07-65BIT OT427. AEC-Q101 d789 transistor equivalent transistor D789 d789 D786 equivalent transistor D786 transistor D789 d787 D786 transistor D781 d782 PDF

    D789

    Abstract: D786 transistor d789 transistor BUK9C07-65BIT
    Text: BUK9C07-65BIT N-channel TrenchPLUS logic level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low


    Original     		BUK9C07-65BIT OT427. AEC-Q101 D789 D786 transistor d789 transistor BUK9C07-65BIT PDF