D412 DPAK Search Results

D412 DPAK Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK6R9P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
TK5R1P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK

D412 DPAK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR D412 Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.	Original	PDF	AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A

Catalog Datasheet

MFG & Type

PDF

Document Tags

TRANSISTOR D412

Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

Original

PDF

AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A