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    D3W TRANSISTOR Search Results

    D3W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D3W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d6f sot-23

    Abstract: AD5040 D3W TRANSISTOR D3Z TRANSISTOR AD5060 AD5061 AD5062 AD5063 ad5060 rev.0
    Text: Fully Accurate 14-/16-Bit VOUT nanoDAC SPI Interface 2.7 V to 5.5 V, in an SOT-23 AD5040/AD5060 FEATURES FUNCTIONAL BLOCK DIAGRAM Single 14-/16-bit DAC, 1 LSB INL Power-on reset to midscale or zero scale Guaranteed monotonic by design 3 power-down functions


    Original     		PDF 14-/16-Bit OT-23 AD5040/AD5060 OT-23 AD5040/ AD5060 d6f sot-23 AD5040 D3W TRANSISTOR D3Z TRANSISTOR AD5060 AD5061 AD5062 AD5063 ad5060 rev.0

    D3W TRANSISTOR

    Abstract: AD5040 AD5060 AD5061 AD5062 AD5063 ad5060 rev.0
    Text: Fully Accurate 14-/16-Bit VOUT nanoDAC SPI Interface 2.7 V to 5.5 V, in an SOT-23 AD5040/AD5060 FEATURES FUNCTIONAL BLOCK DIAGRAM Single 14-/16-bit DAC, 1 LSB INL Power-on reset to midscale or zero scale Guaranteed monotonic by design 3 power-down functions


    Original     		PDF 14-/16-Bit OT-23 AD5040/AD5060 OT-23 AD5040/ AD5060 D3W TRANSISTOR AD5040 AD5060 AD5061 AD5062 AD5063 ad5060 rev.0

    ad5060

    Abstract: ad5060 rev.0
    Text: Fully Accurate 14-/16-Bit VOUT nanoDAC SPI Interface 2.7 V to 5.5 V, in an SOT-23 AD5040/AD5060 FUNCTIONAL BLOCK DIAGRAM FEATURES Single 14-/16-bit DAC, 1 LSB INL Power-on reset to midscale or zero scale Guaranteed monotonic by design 3 power-down functions


    Original     		PDF 14-/16-Bit OT-23 AD5040/AD5060 OT-23 AD5040/ AD5060 ad5060 ad5060 rev.0

    HYB18H512321AF-14

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.30, Feb. 2005 HYB18H512321AF–14 HYB18H512321AF–16 HYB18H512321AF–20 512-Mbit GDDR3 Graphics RAM [700 MHz] Green Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB18H512321AF 512-Mbit HYB18H512321AF­ JESD-51 05122004-B1L1-JEN8 HYB18H512321AF-14

    Untitled

    Abstract: No abstract text available
    Text: D a t a S he et , R e v . 1 . 5 2 , J u n e 2 00 4 H Y B 1 8 T2 5 6 3 2 1 F – 2 0 H Y B 1 8 T2 5 6 3 2 1 F – 2 2 H Y B 1 8 T2 5 6 3 2 1 F – 2 5 256- Mbi t GDDR3 DRAM RoHS compliant M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.


    Original     		PDF but21F­ JESD-51 05142004-ZTTV-E1OQ

    HYB18H512321AF-12

    Abstract: gddr3 schematic BCX10
    Text: Data Sheet, Rev. 1.73, Aug. 2005 HYB18H512321AF–12/14/16/20 HYB18H512321AFL14/16/20 512-Mbit GDDR3 Graphics RAM RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB18H512321AF HYB18H512321AFL14/16/20 512-Mbit JESD-51 05122004-B1L1-JEN8 HYB18H512321AF-12 gddr3 schematic BCX10

    HYB18H256321AFL14

    Abstract: resistor 330 Ohm DATA SHEET GDDR3 SDRAM 256Mb
    Text: Data Sheet, Rev. 1.03, Dec. 2005 HYB18H256321AF–12/14/16 HYB18H256321AFL14/16/20 256-Mbit x32 GDDR3 DRAM RoHS compliant Memory Products Edition 2005-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.


    Original     		PDF HYB18H256321AF HYB18H256321AFL14/16/20 256-Mbit JESD-51 06302005-SES0-FM0M HYB18H256321AFL14 resistor 330 Ohm DATA SHEET GDDR3 SDRAM 256Mb

    smd diode A82

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS [M m SM EET Ê-.; jiv: ”|n d j Uni B U S ] TDA4886 140 MHz video controller with l2C-bus Product specification File under Integrated Circuits, IC02 Philips Semiconductors 1998 Nov 04 PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF TDA4886 TDA4886 SCA60 545104/750/01/pp52 smd diode A82

    st smd diode VU

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS [M m SM EET Ê-.; jiv: ”jndj Uni BUS TDA4886 140 MHz video controller with l2C-bus 1998 Nov 11 Product specification Supersedes data of 1998 Nov 04 File under Integrated Circuits, IC02 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors


    OCR Scan     		PDF TDA4886 TDA4886 SCA60 545104/750/02/pp52 st smd diode VU

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet — A IK T M arch1995 I p E le c tr o n ic s Optimized Reconfigurable Cell Array {ORCA 1C Series Field-Programmable Gate Arrays ATT1C03, ATT1C05, ATT1C07, and ATT1C09) Features • High density: to 11,400 usable gates ■ High I/O: up to 256 usable I/O (forATT1C09)


    OCR Scan     		PDF arch1995 ATT1C03, ATT1C05, ATT1C07, ATT1C09) forATT1C09) 16-bit 84-Pin 100-Pin ATT1C03

    PBII MIL-STD-810E

    Abstract: R6C12
    Text: Lucent Technologies Bell Labs Innovations Optimized Reconfigurable Cell Array ORCA ATT2Cxx Series Field-Programmable Gate Arrays Features Description • High-performance, cost-effective 0.5 jim technology (four-input look-up table delay less than 3.6 ns)


    OCR Scan     		PDF S240/ PS240 256-Pin 304-Pln S304/ PS304 364-Pin 428-Pin ATT2C15, ATT2C26 PBII MIL-STD-810E R6C12

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor