Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • BVCEO > -40V IC = -3A Continuous Collector Current Low Saturation Voltage -220mV @ -1A
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ZXTD720MC
-220mV
AEC-Q101
DS31935
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DFN3020B-8
Abstract: ZXTD720MC ZXTD720MCTA marking D33
Text: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • BVCEO > -40V IC = -3A Continuous Collector Current Low Saturation Voltage -220mV @ -1A
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ZXTD720MC
-220mV
AEC-Q101
DFN3020B-8
DS31935
ZXTD720MC
ZXTD720MCTA
marking D33
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DFN3020B-8
Abstract: ZXTD720MC ZXTD720MCTA marking D33
Text: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -40V RSAT = 104 mΩ IC = -3A Continuous Collector Current Low Equivalent On Resistance
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ZXTD720MC
-220mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31935
DFN3020B-8
ZXTD720MC
ZXTD720MCTA
marking D33
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transistor dk
Abstract: dk transistor
Text: SKM 111AR MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions P, Q DK R%+ 8 * 55 /.&)3L45) 5;),4=4)0 Values Units ABB DBB @AKBC IBB X DB 9 ZB GGG [ AKB @ADKC S 1 1 S R% DKBB S <¥ Q 9 <6 DBB 1 <¥V Q 9 <6V IBB 1 SM6 <M <MV SW6 P2Y+ @P5.:C S45/* P5 Q DK @UBC R%
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111AR
transistor dk
dk transistor
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3K45
Abstract: No abstract text available
Text: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%
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180A020
3K45
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50S20
Abstract: BH6455GUL
Text: System Lens Driver Series for Mobile Phone Cameras 2 wire serial interface Lens Driver for Voice Coil Motor I2C BUS compatible No.12015EAT04 BH6455GUL ●General Description The BH6455GUL motor driver provide 1 Constant -Current Driver 0.25ch bridge. This lens driver is offered in an ultra-small functional lens
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BH6455GUL
BH6455GUL
R1120A
50S20
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ZXMC3AM832EV
Abstract: ZXTD1M832EV ZXTDA1M832EV ZXTDB2M832EV ZXTD2M832EV ZXTD3M832EV ZXTDAM832EV ZXTDBM832EV ZXTDC3M832EV ZXTDCM832EV
Text: ZXTD*M832EV ZXM*M832EV MPPS Miniature Package Power Solutions COMBINATION DUAL DIE MLP EVALUATION BOARD THERMAL SPECIFICATION SHEET EVALUATION BOARD DIAGRAM DEVICE PIN CONNECTIONS 1 PD = 1.4W 3 4 5 6 Dual Transistor C1 B1 2 E1 B2 E2 C2 Dual MOSFET D1 S1 G1
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M832EV
ZXMC3AM832EV
ZXTD1M832EV
ZXTDA1M832EV
ZXTDB2M832EV
ZXTD2M832EV
ZXTD3M832EV
ZXTDAM832EV
ZXTDBM832EV
ZXTDC3M832EV
ZXTDCM832EV
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package
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ZXTD720MC
ZXTD3M832
MLP832
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log sheet air conditioning
Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
Text: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer
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ZXTD3M832
MLP832
log sheet air conditioning
MLP832
ZXTD3M832
ZXTD3M832TA
ZXTD3M832TC
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ZXTD720MC
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer
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ZXTD720MC
ZXTD3M832
MLP832
ZXTD720MC
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160 BA04NSF1
Abstract: 160-DM-PS1 Allen-Bradley 160-dm-sf1 c Allen-Bradley 160-ba02 ALLEN BRADLEY 160 BA04NSF1 160-AA02NSF1 160-BA04 160 ba04nps1 series c AA02NSF1 160-DM-SF1
Text: Technical Data Bulletin 160 “Series C” Smart Speed Controllers A Step Above the Rest… Bulletin 160 Smart Speed Controller SSC with Sensorless Vector Performance The Bulletin 160 Smart Speed Controller is available in models rated between 0.37 to 4 kW (0.5 to 5 horsepower) with voltage
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00-240V
80-460V
D-74834
0160-TD001F-EN-P
0160-TD001E-EN-P
160 BA04NSF1
160-DM-PS1
Allen-Bradley 160-dm-sf1 c
Allen-Bradley 160-ba02
ALLEN BRADLEY 160 BA04NSF1
160-AA02NSF1
160-BA04
160 ba04nps1 series c
AA02NSF1
160-DM-SF1
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D128 transistor
Abstract: transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 PT16580 transistor D132 transistor d155
Text: PT16580 General Purpose LCD Driver IC DESCRIPTION PT16580 is an LCD Driver IC which can drive up to 200 segments. It can be used for frequency display in microprocessor-controlled radio receiver and in other display applications. PT16580 supports both 1/3 duty,
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PT16580
PT16580
MS-026BCD.
D128 transistor
transistor D128
PT16580-LQ
transistor D113
D114 TRANSISTOR
transistor D195
TRANSISTOR D114
transistor D132
transistor d155
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Untitled
Abstract: No abstract text available
Text: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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R1Q3A4436RBG,
R1Q3A4418RBG
144-Mbit
R10DS0141EJ0100
R1Q3A4436RBG
304-word
36-bit
R1Q3A4418RBG
608-word
18-bit
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transistor 3005
Abstract: motorola 2963 IC 7585
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Power Transistor MRW53601 . . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1.0 to 3.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers
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MRW53601
MRW53601
DlD732'
transistor 3005
motorola 2963
IC 7585
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Untitled
Abstract: No abstract text available
Text: m/VEREX KD224575HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Hi(jhm Bet3 Dual Darlington Transistor Module 75 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are
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KD224575HB
Amperes/600
72TMb21
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b0724
Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
Text: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and
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BD720
BD722
BD724
BD726
711002b
BD440.
BD719;
BD724.
b0724
B0719
transistor bu 311
B0720
BD440
BD719
BD726
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S9925
Abstract: No abstract text available
Text: N J u ly 199 6 N D S9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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S9925A
S9925
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8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2b
BUK453-60A/B
T0220AB
BUK453
8uk453
BUK453-60A
BUK453-60B
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ci5 5t
Abstract: No abstract text available
Text: P H IL IP S I N T E R N A T I O N A L st,E ]> Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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711Dfl2b
BUK571-60A/B
BUK571
BUK541-60A/B
ci5 5t
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marking codes transistors SSs
Abstract: transistor 309 PMBFJ308 PMBFJ309 PMBFJ310 UCD219
Text: bbSBTSM G07Sb4'ì 311 M S IC 3 P hilips S em iconductors N-channel silicon field-effect transistors •■ n a p c Prelim inary specification PM BFJ308/309/310 / p h i l i p s s e m ic o n d b3E D PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and
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bb53T24
PMBFJ308/309/310
PMBFJ308:
PMBFJ309:
PMBFJ310:
PMBFJ308,
marking codes transistors SSs
transistor 309
PMBFJ308
PMBFJ309
PMBFJ310
UCD219
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Untitled
Abstract: No abstract text available
Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4BC30S
O-22QAB
S54S2
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents
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IRFE430
JANTX2N6802U
JANTXV2N6802U
MIL-PRF-19500/557]
500Volt,
46SS452
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c185 transistor
Abstract: 2SK293 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33
Text: NEC j m + T / Y t x $ s i j u > s < r7 — Y 7 .9 S ilico n P o w e r T ra n s is to r A 2SK293,293A FET ¡S liJE iM J S ^ f S a f e X 'r N-channel M O S Field Effect Pow er Transistor High Voltage, High Speed, High Current Switching High Reliavility Industrial Use
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2SK293
2SK293,
K293AÃ
ms0582
c185 transistor
3e tRANSISTOR
K293A
8115, transistor
C14A
k293
2SK293A
T108
TS33
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AT41511
Abstract: No abstract text available
Text: HEWLETT- PAC KARD/ CMPNTS blE T> • 4447584 QOCHaiS 77b H H P A W hp% H EW LETT mL'KM PACKARD Low Cost General Purpose Transistors Technical Data AT-41511 AT-41586 Features D escription • L ow N oise F ig u re 1.4 dB Typical a t 1 GHz 1.7 dB Typical a t 2 GHz
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AT-41511
AT-41586
AT-41511
RS-481,
4447SÃ
AT-41586
AT-41586-TR1
AT-41586-TR2
44475A4
AT41511
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