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    D33 TRANSISTOR Search Results

    D33 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D33 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • BVCEO > -40V IC = -3A Continuous Collector Current Low Saturation Voltage -220mV @ -1A


    Original     		PDF ZXTD720MC -220mV AEC-Q101 DS31935

    DFN3020B-8

    Abstract: ZXTD720MC ZXTD720MCTA marking D33
    Text: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • BVCEO > -40V IC = -3A Continuous Collector Current Low Saturation Voltage -220mV @ -1A


    Original     		PDF ZXTD720MC -220mV AEC-Q101 DFN3020B-8 DS31935 ZXTD720MC ZXTD720MCTA marking D33

    DFN3020B-8

    Abstract: ZXTD720MC ZXTD720MCTA marking D33
    Text: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -40V RSAT = 104 mΩ IC = -3A Continuous Collector Current Low Equivalent On Resistance


    Original     		PDF ZXTD720MC -220mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31935 DFN3020B-8 ZXTD720MC ZXTD720MCTA marking D33

    transistor dk

    Abstract: dk transistor
    Text: SKM 111AR MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions P, Q DK R%+ 8 * 55 /.&)3L45) 5;),4=4)0 Values Units ABB DBB @AKBC IBB X DB 9 ZB GGG [ AKB @ADKC S 1 1 S R% DKBB S <¥ Q 9 <6 DBB 1 <¥V Q 9 <6V IBB 1 SM6 <M <MV SW6 P2Y+ @P5.:C S45/* P5 Q DK @UBC R%


    Original     		PDF 111AR transistor dk dk transistor

    3K45

    Abstract: No abstract text available
    Text: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%


    Original     		PDF 180A020 3K45

    50S20

    Abstract: BH6455GUL
    Text: System Lens Driver Series for Mobile Phone Cameras 2 wire serial interface Lens Driver for Voice Coil Motor I2C BUS compatible No.12015EAT04 BH6455GUL ●General Description The BH6455GUL motor driver provide 1 Constant -Current Driver 0.25ch bridge. This lens driver is offered in an ultra-small functional lens


    Original     		PDF BH6455GUL BH6455GUL R1120A 50S20

    ZXMC3AM832EV

    Abstract: ZXTD1M832EV ZXTDA1M832EV ZXTDB2M832EV ZXTD2M832EV ZXTD3M832EV ZXTDAM832EV ZXTDBM832EV ZXTDC3M832EV ZXTDCM832EV
    Text: ZXTD*M832EV ZXM*M832EV MPPS Miniature Package Power Solutions COMBINATION DUAL DIE MLP EVALUATION BOARD THERMAL SPECIFICATION SHEET EVALUATION BOARD DIAGRAM DEVICE PIN CONNECTIONS 1 PD = 1.4W 3 4 5 6 Dual Transistor C1 B1 2 E1 B2 E2 C2 Dual MOSFET D1 S1 G1


    Original     		PDF M832EV ZXMC3AM832EV ZXTD1M832EV ZXTDA1M832EV ZXTDB2M832EV ZXTD2M832EV ZXTD3M832EV ZXTDAM832EV ZXTDBM832EV ZXTDC3M832EV ZXTDCM832EV

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package


    Original     		PDF ZXTD720MC ZXTD3M832 MLP832

    log sheet air conditioning

    Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
    Text: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTD3M832 MLP832 log sheet air conditioning MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC

    ZXTD720MC

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTD720MC ZXTD3M832 MLP832 ZXTD720MC

    160 BA04NSF1

    Abstract: 160-DM-PS1 Allen-Bradley 160-dm-sf1 c Allen-Bradley 160-ba02 ALLEN BRADLEY 160 BA04NSF1 160-AA02NSF1 160-BA04 160 ba04nps1 series c AA02NSF1 160-DM-SF1
    Text: Technical Data Bulletin 160 “Series C” Smart Speed Controllers A Step Above the Rest… Bulletin 160 Smart Speed Controller SSC with Sensorless Vector Performance The Bulletin 160 Smart Speed Controller is available in models rated between 0.37 to 4 kW (0.5 to 5 horsepower) with voltage


    Original     		PDF 00-240V 80-460V D-74834 0160-TD001F-EN-P 0160-TD001E-EN-P 160 BA04NSF1 160-DM-PS1 Allen-Bradley 160-dm-sf1 c Allen-Bradley 160-ba02 ALLEN BRADLEY 160 BA04NSF1 160-AA02NSF1 160-BA04 160 ba04nps1 series c AA02NSF1 160-DM-SF1

    D128 transistor

    Abstract: transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 PT16580 transistor D132 transistor d155
    Text: PT16580 General Purpose LCD Driver IC DESCRIPTION PT16580 is an LCD Driver IC which can drive up to 200 segments. It can be used for frequency display in microprocessor-controlled radio receiver and in other display applications. PT16580 supports both 1/3 duty,


    Original     		PDF PT16580 PT16580 MS-026BCD. D128 transistor transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 transistor D132 transistor d155

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit R10DS0141EJ0100 R1Q3A4436RBG 304-word 36-bit R1Q3A4418RBG 608-word 18-bit

    transistor 3005

    Abstract: motorola 2963 IC 7585
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Power Transistor MRW53601 . . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1.0 to 3.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers


    OCR Scan     		PDF MRW53601 MRW53601 DlD732' transistor 3005 motorola 2963 IC 7585

    Untitled

    Abstract: No abstract text available
    Text: m/VEREX KD224575HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Hi(jhm Bet3 Dual Darlington Transistor Module 75 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are


    OCR Scan     		PDF KD224575HB Amperes/600 72TMb21

    b0724

    Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
    Text: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and


    OCR Scan     		PDF BD720 BD722 BD724 BD726 711002b BD440. BD719; BD724. b0724 B0719 transistor bu 311 B0720 BD440 BD719 BD726

    S9925

    Abstract: No abstract text available
    Text: N J u ly 199 6 N D S9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF S9925A S9925

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    ci5 5t

    Abstract: No abstract text available
    Text: P H IL IP S I N T E R N A T I O N A L st,E ]> Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF 711Dfl2b BUK571-60A/B BUK571 BUK541-60A/B ci5 5t

    marking codes transistors SSs

    Abstract: transistor 309 PMBFJ308 PMBFJ309 PMBFJ310 UCD219
    Text: bbSBTSM G07Sb4&#39;ì 311 M S IC 3 P hilips S em iconductors N-channel silicon field-effect transistors •■ n a p c Prelim inary specification PM BFJ308/309/310 / p h i l i p s s e m ic o n d b3E D PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and


    OCR Scan     		PDF bb53T24 PMBFJ308/309/310 PMBFJ308: PMBFJ309: PMBFJ310: PMBFJ308, marking codes transistors SSs transistor 309 PMBFJ308 PMBFJ309 PMBFJ310 UCD219

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30S O-22QAB S54S2

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents


    OCR Scan     		PDF IRFE430 JANTX2N6802U JANTXV2N6802U MIL-PRF-19500/557] 500Volt, 46SS452

    c185 transistor

    Abstract: 2SK293 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33
    Text: NEC j m + T / Y t x $ s i j u > s < r7 — Y 7 .9 S ilico n P o w e r T ra n s is to r A 2SK293,293A FET ¡S liJE iM J S ^ f S a f e X 'r N-channel M O S Field Effect Pow er Transistor High Voltage, High Speed, High Current Switching High Reliavility Industrial Use


    OCR Scan     		PDF 2SK293 2SK293, K293AÃ ms0582 c185 transistor 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33

    AT41511

    Abstract: No abstract text available
    Text: HEWLETT- PAC KARD/ CMPNTS blE T> • 4447584 QOCHaiS 77b H H P A W hp% H EW LETT mL'KM PACKARD Low Cost General Purpose Transistors Technical Data AT-41511 AT-41586 Features D escription • L ow N oise F ig u re 1.4 dB Typical a t 1 GHz 1.7 dB Typical a t 2 GHz


    OCR Scan     		PDF AT-41511 AT-41586 AT-41511 RS-481, 4447SÃ AT-41586 AT-41586-TR1 AT-41586-TR2 44475A4 AT41511