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    D3 TRANSISTOR Search Results

    D3 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    D3 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LA 2910

    Abstract: D2 Pack dsa001
    Text: SVR1086-2.85M, Z, D2, & D3 thru SVR1086-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR


    Original     		PDF SVR1086-2 SVR1086-12M, 12Volts LM117 SVR1085 150oC SVR1086 O-254 LA 2910 D2 Pack dsa001

    DSA-001

    Abstract: dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
    Text: SVR1085-3.3M, Z, D2, & D3 thru SVR1085-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR


    Original     		PDF SVR1085-3 SVR1085-12M, 12Volts SVR1085 O-254 O-254Z DSA-001 dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Latch-Up Proof, Quad SPST Switches ADG5412/ADG5413 FEATURES FUNCTIONAL BLOCK DIAGRAMS S1 D1 S2 S2 IN2 IN2 D2 D2 ADG5412 ADG5413 S3 S3 IN3 IN3 D3 D3 Relay replacement Automatic test equipment Data acquisition Instrumentation Avionics Audio and video switching


    Original     		PDF ADG5412/ADG5413 ADG5412 ADG5413 ADG5412/ADG5413 ADG5412 ADG5413 ADG5412; 16-Lead

    power transistor 1802

    Abstract: transistor 010C ARF1510
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1510 40MHz ARF1510 power transistor 1802 transistor 010C

    ARF1511

    Abstract: 225MH
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1511 40MHz ARF1511 125lb 225MH

    power transistor 1802

    Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1511 40MHz ARF1511 power transistor 1802 750w planar transistor C 4927 rf power generator ARF 250v 1500w

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1510 40MHz ARF1510 125lb

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1510 40MHz ARF1510

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1511 40MHz ARF1511

    AMPLIFIER 1500w

    Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
    Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1510 40MHz ARF1510 125lb AMPLIFIER 1500w Simple test MOSFET Procedures Transistor S1D 750w planar transistor AN 1510

    AMPLIFIER 1500w

    Abstract: ARF1510 15VCrss
    Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1510 40MHz ARF1510 125lb AMPLIFIER 1500w 15VCrss

    rf power generator

    Abstract: ARF1511 750w planar transistor ARF 250v 1500w
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1511 40MHz ARF1511 125lb rf power generator 750w planar transistor ARF 250v 1500w

    C 4927

    Abstract: AMPLIFIER 1500w Simple test MOSFET Procedures ARF1511
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1511 40MHz ARF1511 125lb C 4927 AMPLIFIER 1500w Simple test MOSFET Procedures

    BCW32

    Abstract: BCW31 BCW33
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33

    IRFMJ044

    Abstract: No abstract text available
    Text: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-97258 IRFMJ044 IRFMJ044

    Untitled

    Abstract: No abstract text available
    Text: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-97258 IRFMJ044

    Untitled

    Abstract: No abstract text available
    Text: mß/EREX KD221275A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DlISl D3 flinQtOfl Transistor Module 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD221275A7 Amperes/1200

    HN1V01H

    Abstract: No abstract text available
    Text: HN1V01H TO SH IBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. “ “0.3 4.5 - 0.2 MAXIMUM RATINGS (Ta = 25°C (D1# D2, D3, D4) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range


    OCR Scan     		PDF HN1V01H HN1V01H

    Q62702-S510

    Abstract: No abstract text available
    Text: SIPMOS Kleinsignaltransistoren SIPMOS®Small-Signal Transistors Bedrahtete Bauformen Leaded Types Typ Type ^DS max. V ^ 3S (thj V (max) mA Iff [» Ä D3 {on) max N-Kanal-Anreicherungstypen . Aot mW Bestellnummer Ordering Code Gehäuse Package 1! Bild Figure


    OCR Scan     		PDF BSS98 Q62702-S464 Q62702-S603 Q67000-S061 Q67000-S062 Q62702-S489 Q67000-S065 Q62702-S458 Q62702-S623 Q62702-S510 Q62702-S510

    BCW32R

    Abstract: BCW33R BCW31 BCW31R BCW32 BCW33 DS44
    Text: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - D5 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE SYMBOL PARAMETER UNIT Collector-Base Voltage V CBO 32 V Collector-Emltter Voltage lc = 2.0mA


    OCR Scan     		PDF -BCW31 BCW32 BCW33 BCW31R BCW32R BCW33R BCW31 10fiA, 10/JA, DS44

    BFP96

    Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
    Text: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.


    OCR Scan     		PDF BFP96 OT173 OT173X BFQ32C. BFP96 BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548

    301 marking code PNP transistor

    Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
    Text: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP


    OCR Scan     		PDF SC-74) DTA114EKA) DTC114EKA) SC-70) SC-59) 301 marking code PNP transistor Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74

    Untitled

    Abstract: No abstract text available
    Text: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02


    OCR Scan     		PDF BCW31 BCW32 BCW33 BCW31 Q0QQ752 BCW32

    Untitled

    Abstract: No abstract text available
    Text: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage


    OCR Scan     		PDF BCW31 BCW32 BCW33 BCW31R BCW32R BCW33R