D2695 TRANSISTOR Search Results

D2695 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

D2695 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SD2695 Abstract: D2695 Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2695 2SD2695 D2695	PDF
2SD2695 Abstract: D2695 D2695 TRANSISTOR Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2695 2SD2695 D2695 D2695 TRANSISTOR	PDF
D2695 TRANSISTOR Abstract: D2695 2SD2695 Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2695 D2695 TRANSISTOR D2695 2SD2695	PDF
D2695 TRANSISTOR Abstract: D2695 2SD2695 Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2695 D2695 TRANSISTOR D2695 2SD2695	PDF
D2695 Abstract: D2695 TRANSISTOR 2SD2695 Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2695 D2695 D2695 TRANSISTOR 2SD2695	PDF