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    D1616 TRANSISTOR Search Results

    D1616 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D1616 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1616A

    Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


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    PDF 2SD1616/A D1616 D1616A width10ms, QW-R201-008 D1616A utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616

    D1616A

    Abstract: utc d1616a d1616 TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


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    PDF 2SD1616/A D1616 D1616A width10ms, QW-R201-008 utc d1616a TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor

    D1616A

    Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


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    PDF 2SD1616/A OT-89 D1616 D1616A width10ms, 100mA 100mA utc d1616a transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN

    D1616A

    Abstract: d1616 transistor d1616a utc d1616a UTC d1616
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


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    PDF 2SD1616/A OT-89 D1616 D1616A width10ms, QW-R208-015 transistor d1616a utc d1616a UTC d1616

    utc d1616a

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION  * Audio frequency power amplifier * Medium speed switching 2 1 SOT-23 JEDEC TO-236  ORDERING INFORMATION Order Number Note: MMBT1616G-x-AE3-R


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    PDF MMBT1616/A OT-23 O-236) MMBT1616G-x-AE3-R MMBT1616AG-x-AE3-R MMBT1616L-x-AE3-R MMBT1616 utc d1616a

    D1616A

    Abstract: d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 2 SOT-23 *Pb-free plating product number: MMBT1616L/MMBT16AL ORDERING INFORMATION Order Number


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    PDF MMBT1616/A OT-23 MMBT1616L/MMBT16AL MMBT1616-x-AE3-R MMBT1616L-x-AE3-R MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R D1616A d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616

    utc d1616a

    Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
    Text: UNISONIC TECHNOLOGIES CO., 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: 2SD1616L/2SD1616AL PIN CONFIGURATION PIN NO.


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    PDF 2SD1616/A 2SD1616L/2SD1616AL 2SD1616-T92-B 2SD1616L-T92-B 2SD1616-T92-K 2SD1616L-T92-K 2SD1616A-T92-B 2SD1616AL-T92-B 2SD1616A-T92-K 2SD1616AL-T92-K utc d1616a D1616A d1616 transistor d1616a TRANSISTOR D1616

    D1616A

    Abstract: D1616 transistor d1616a TRANSISTOR D1616 KSD1616 KSD1616A d1616 transistor 1616A
    Text: KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


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    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A PW10ms, D1616A D1616 transistor d1616a TRANSISTOR D1616 KSD1616 KSD1616A d1616 transistor 1616A

    D1616A

    Abstract: TRANSISTOR D1616 d1616 d1616 transistor D1616A g transistor d1616a
    Text: KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


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    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A KSD1616A PW10ms, D1616A TRANSISTOR D1616 d1616 d1616 transistor D1616A g transistor d1616a

    transistor d1616a

    Abstract: D1616A TRANSISTOR D1616 d1616 d1616 transistor 1616A KSD1616 KSD1616A D1616A g
    Text: KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


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    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A PW10ms, transistor d1616a D1616A TRANSISTOR D1616 d1616 d1616 transistor 1616A KSD1616 KSD1616A D1616A g

    D1616A

    Abstract: transistor d1616a 1616a TRANSISTOR D1616 D1616 KSD1616 KSD1616A
    Text: KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


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    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A PW10ms, D1616A transistor d1616a 1616a TRANSISTOR D1616 D1616 KSD1616 KSD1616A

    TRANSISTOR D1616

    Abstract: transistor d1616a D1616A d1616 a KSD1 d1616
    Text: KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


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    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A KSD1616A PW10ms, KSD1616 TRANSISTOR D1616 transistor d1616a D1616A d1616 a KSD1 d1616

    a9hv

    Abstract: a14hv MCS-51 with adc and eeprom A13HV 80c31 rs232 d1616 TRANSISTOR D1616 80C31 80C32 E12E
    Text: W78E354 MONITOR MICROCONTROLLER GENERAL DESCRIPTION The W78E354 is a stand-alone high-performance microcontroller ASIC specially designed for use in monitor control applications. Using the Winbond 0.8µ DPDM process, the W78E354 integrates an embedded 8031 microcontroller core, 16K bytes of Flash cell, 512 bytes of RAM and a number of


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    PDF W78E354 W78E354 12/8-bit a9hv a14hv MCS-51 with adc and eeprom A13HV 80c31 rs232 d1616 TRANSISTOR D1616 80C31 80C32 E12E