D1358
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with BA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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on-chip resistor pnp
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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15ace
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DVP-40EH
Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Text: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.
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113-API
API156
296-API
DVP-40EH
DVP-10SX
DVP28SV11R2
DVP-32EH
DVP14Ec
DVP80EH00R3
DVP40es
DVP-14SS
DVP-08SN
DVP64EH00R3
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BA1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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equivalent transistor D1555
Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Text: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1
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32-bit
32-bit
16-bit
K100000
equivalent transistor D1555
transistor d1555
transistor d1047
d1555 transistor
TRANSISTOR DATASHEET D1555
delta plc DVP 14SS
DVP-40EH
DVP-10SX
d1555
D1557
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DVP-10SX
Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Text: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3
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K100000
DVP-10SX
DVP-14SS
delta plc DVP 14SS
DVP-32EH
DVP-80EH
DVP-64EH
DVP-32ES
DVP-48EH
DVP-60ES
DVP-20EX
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with BA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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transistor C982
Abstract: T460-8525 ch7f IC 7824 c982 transistor C982 T108-8001 al 232 nec SF.C 2806 MA 7824
Text: Compound Transistor BA1 L4Z & m O / ' M T X f f i è f i l U v ' i t . 4.0 ±0.2 B R i = 47 kQ S' O- W V Ri 6* O BN 1L4Z £ n > 7 "U / > ^ >J T lÜ fflT 'ë i t . * Ê * te * Æ fê ( T A =25 °C) un 1 iff n ^ a v x 9 ; ^ n 3 VcEO 50 V 5 V 100 mA 200 mA
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PWS10
CycleS50
transistor C982
T460-8525
ch7f
IC 7824
c982 transistor
C982
T108-8001
al 232 nec
SF.C 2806
MA 7824
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til 621
Abstract: LT 7824 MA 7824 1S62 TRANSISTOR 7824 A pws350
Text: 4# ! mm i t o ' <'í ? 7. te íÆír mL T Ri = 47 kQ, ' £i~ o R2= 22 kQ) 0,2^) 2.0±0.2 0 .4 2 £-f, o B N 1 L 4 L t n > Vo'] 7 > ? ij « * Í* * 5 É « K T a =25 S í °C ) uf} Í? 3 U 3 U 7 X ; -y 7 3 1 - 7 7 3 U 7 7 X f 'S J V l ï H : - i 7 7 •
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CycleS50
til 621
LT 7824
MA 7824
1S62
TRANSISTOR 7824 A
pws350
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transistor DK qj
Abstract: JKS-45 SE-49
Text: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @
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PWS10
CycleS50
010i-flIDUlrNi-No
transistor DK qj
JKS-45
SE-49
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ET 7824
Abstract: MA 7824 BAIL3Z
Text: -r — S 7 • S/— h- Com pound Transisto r BAI L3Z 4# S 0 '<-f T ‘mm x. i t i t i : ft * ï L R 1= 4.7 kQ) 6 4=^ o B N lL 3 Z t 3 > V ) / y ? ')xif.m x-è i t . * ê i Î g * Æ f ê ( T A H = 2 5 °C ) Bg- @ -Sf fê Se # {£ Z3 u ? ? • VcBO 60 V
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PWS10
Cycleg50
ET 7824
MA 7824
BAIL3Z
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lm 3178
Abstract: transistor tt 2170 TRANSISTOR TT 2190 nec 8525 al 232 nec lm 3178 t 2190 ic for lg tv 8001 SI T460-8525 lm 4011
Text: NEC Com pound Transisto r BN1A4Z y =i> js p n p x # ¥ -fï m o / • mm nm Ri o B A 1 A 4 Z i 3 > 7 " ' j y > ; i ] T lÈ fflt'ë i- t o *Ê*tH*5Êfê (Ta = 25°C) m «§ g -?• TE fi l& V CBO -60 V 3 1 / ^ ' X ; -/9f^W ±. VcEO -50 V z- ì "/ 9 • ^ — xfa]'SEE
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CycleSi50
IIR13EtÃ
lm 3178
transistor tt 2170
TRANSISTOR TT 2190
nec 8525
al 232 nec
lm 3178 t
2190 ic for lg tv
8001 SI
T460-8525
lm 4011
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FT03C
Abstract: PW535 NEC IC D 553 C TC-6183
Text: 5 s— S 7 • — S C o m p o u n d Tran sisto r BN1A3Q Îâ ÎÆ rtIc P N P a : ft m 9\-MM ^ -ii i mm 2.0± 0.2 ’ I - - I 6° (Ri = 1.0 k£2, R2=10 kQ) f 1 o BA 1A 3Q t 3 > 7° ij / > ? U *6SÎft*Æ» (Ta = 25°C) M @ •3V 7 ? • x fiü lŒ »& a v 9 9 - x - i •■/9 T&W.1Ï .
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-XFs11lÂ
PWS10
CycleS50
Wl-53a
FT03C
PW535
NEC IC D 553 C
TC-6183
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ET 7824
Abstract: tboj 7824 7824 vc IC 4011 T460-8525 T108-8001 SL 1424 al 232 nec
Text: ~T— 5 ? • $ /— b Compound Transistor B N 1L 3Z mt/C F*gM P N P i U=]>h^ & a O / ' M T X ffil/C £ f t jgj L T ^ t -to Ri = 4.7 kQ 4.0 ± 0 .2 J 1 2.0 + 0.2 6* "" ¥ o B A 1L3Z £ =? > 7° U y > 'J T 'è É "To. (Ta = 25°C) n B& s j? • 3U 3 M u ?
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PWS10
CycleS50
-186S
ET 7824
tboj
7824
7824 vc
IC 4011
T460-8525
T108-8001
SL 1424
al 232 nec
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