2SJ557
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
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2SJ557
2SJ557
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PA1813
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PA1813
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and
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PA1813
PA1813
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PA1854
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and
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PA1854
PA1854
PA1854GR-9JG
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Waveguide Gaskets
Abstract: MIL-DTL-85328 WR137 gasket dimensions M83528 001 Waveguide Gaskets WR187 ZZ-R-765 CLASS 2B, GRADE 50 SHELF LIFE m83528 MIL-DTL-83528C WR340 waveguide fluorosilicone curing
Text: Elastomeric EMI Shielding Solutions www.lairdtech.com Innovative Technology for a Connected World ANTENNAS & RECEPTION WIRELESS REMOTE CONTROL EMI SOLUTIONS THERMAL MANAGEMENT WIRELESS M2M & TELEMATICS ABOUT LAIRD TECHNOLOGIES Laird Technologies designs and manufactures customized, performance-critical
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2SK3105
Abstract: marking xa
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance
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2SK3105
2SK3105
marking xa
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1278n
Abstract: S6305 chomerics MIL-G-83528 Cho-Seal 1298 S6305 CHO-SEAL 1215 Cho-Seal s6305 3M Nextel EPDM fungus resistance CEPS-0002
Text: CONDUCTIVE ELASTOMERS ® CHO-SEAL & CHO-SIL Conductive Elastomers Since 1961, Chomerics has invented and extended virtually every aspect of conductive elastomer materials technology — from the earliest silver and silver/copper filled silicones to the
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MIL-G-83528
MIL-G-83528,
1278n
S6305 chomerics
Cho-Seal 1298
S6305
CHO-SEAL 1215
Cho-Seal s6305
3M Nextel
EPDM fungus resistance
CEPS-0002
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M83528/002D-017
Abstract: No abstract text available
Text: EMI CATALOG www.lairdtech.com ABOUT LAIRD Laird is a global technology business focused on enabling wireless communication and smart systems, and providing components and systems that protect electronics. Laird operates through two divisions, Wireless Systems and
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2SK3105
Abstract: marking xa
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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DVP-40EH
Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Text: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.
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113-API
API156
296-API
DVP-40EH
DVP-10SX
DVP28SV11R2
DVP-32EH
DVP14Ec
DVP80EH00R3
DVP40es
DVP-14SS
DVP-08SN
DVP64EH00R3
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PA1813
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and
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PA1813
PA1813
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2SJ557
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance
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2SJ557
2SJ557
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2SJ557
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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cn/A/U 237 BG
Abstract: MP 130B transformer MP 130B 1800
Text: Enclosures . . . . . . for Industry A Phoenix Mecano Company We are Dedicated to Achieving Customer Satisfaction Through Continuous Improvement. Rose+Bopla, the enclosure companies of Phoenix Mecano AG, an international corporation based in Switzerland, has developed a broad range of
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equivalent transistor D1555
Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Text: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1
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32-bit
32-bit
16-bit
K100000
equivalent transistor D1555
transistor d1555
transistor d1047
d1555 transistor
TRANSISTOR DATASHEET D1555
delta plc DVP 14SS
DVP-40EH
DVP-10SX
d1555
D1557
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DVP-10SX
Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Text: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3
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K100000
DVP-10SX
DVP-14SS
delta plc DVP 14SS
DVP-32EH
DVP-80EH
DVP-64EH
DVP-32ES
DVP-48EH
DVP-60ES
DVP-20EX
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2SK3105
Abstract: marking xa
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)
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2SK3105
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marking xa
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PA1854
Abstract: a4660
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and
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PA1854
PA1854
a4660
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PA1854
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistor D1843
Abstract: D1843 d1859 transistor transistor d1913 transistor D1710 D1875 D1835 transistor d1941 d1941 transistor D1853 transistor
Text: DVP-PM APPLICATION MANUAL Table of Contents Chapter 1: Program Structure of DVP-PM 1.1 O100 Main Program . 1-1 1.1.1 Manual Motion in O100 Main Program . 1-2
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent
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2SK3105
2SK3105
D13293EJ1V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1854 is a switching device which can be driven directly by a 2.5-V power source.
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uPA1854
D13295EJ1V0DS00
PA1854
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 1 3 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1813 is a switching device which can be driven directly by a 2.5-V power source.
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JUPA1813
D13294EJ1V0DS00
PA1813
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